IXFH76N07-11

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Mfr.Part #
IXFH76N07-11
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 70V 76A TO247AD
Stock
2,059
In Stock :
2,059

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
REACH SVHC :
No SVHC
Number of Terminations :
3
Product Category :
MOSFET
JESD-609 Code :
e1
Turn-Off Delay Time :
130 ns
Drain to Source Breakdown Voltage :
70V
Supplier Device Package :
TO-247AD (IXFH)
Resistance :
11mOhm
Transistor Type :
1 N-Channel
Fall Time (Typ) :
55 ns
Pin Count :
3
Power Dissipation :
360W
RoHS :
Details
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
70V
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
FET Feature :
--
Width :
5.3 mm
Rise Time :
70ns
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Dual Supply Voltage :
70V
Rds On (Max) @ Id, Vgs :
11m Ω @ 40A, 10V
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation Ambient-Max :
360 W
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Tradename :
HyperFET
Number of Elements :
1
JEDEC-95 Code :
TO-247
Package / Case :
TO-247-3
Base Product Number :
IXFH76
Length :
16.26 mm
Lead Free :
Lead Free
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
Not Applicable
Terminal Position :
Single
Transistor Polarity :
N-Channel
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
3.4V @ 4mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Packaging :
Tube
Number of Channels :
1 Channel
Mounting Style :
Through Hole
Surface Mount :
No
Voltage - Rated DC :
70V
Qualification Status :
Not Qualified
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Height :
21.46 mm
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™
Power Dissipation (Max) :
360W (Tc)
Avalanche Energy Rating (Eas) :
2000 mJ
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.011 Ω
Product Status :
Not For New Designs
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Nominal Vgs :
3.4 V
Power Dissipation-Max (Abs) :
300 W
Pulsed Drain Current-Max (IDM) :
304 A
Factory Lead Time :
8 Weeks
Transistor Application :
SWITCHING
Package :
Tube
Threshold Voltage :
3.4V
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 175 C
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
76A
Published :
2000
Configuration :
Single
Power Dissipation-Max :
360W Tc
DS Breakdown Voltage-Min :
70 V
Drain Current-Max (Abs) (ID) :
76 A
Operating Temperature :
-55°C~175°C TJ
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Number of Terminals :
3
Current Rating :
76A
Case Connection :
DRAIN
Radiation Hardening :
No
Channel Mode :
Enhancement
Datasheets
IXFH76N07-11
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH76N07-11 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, IXFH76N07-11 pinout, IXFH76N07-11 datasheet PDF, IXFH76N07-11 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH76N07-11 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH76N07-11


N-Channel Tube 11m Ω @ 40A, 10V ±20V 4400pF @ 25V 240nC @ 10V 70V TO-247-3

IXFH76N07-11 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4400pF @ 25V.This device conducts a continuous drain current (ID) of 76A, which is the maximum continuous current transistor can conduct.Using VGS=70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 70V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 76 A.When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 304 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.4V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 70 V.This transistor requires a drain-source voltage (Vdss) of 70V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH76N07-11 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 304 A.
a threshold voltage of 3.4V
a 70V drain to source voltage (Vdss)


IXFH76N07-11 Applications


There are a lot of IXYS
IXFH76N07-11 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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