IXFH76N07-11

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

76A

Package / Case :

TO-247-3

Height :

21.46 mm

Vgs (Max) :

±20V

FET Feature :

--

Mounting Type :

Through Hole

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

76 A

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Product Status :

Not For New Designs

Transistor Application :

SWITCHING

Power Dissipation (Max) :

360W (Tc)

Length :

16.26 mm

Dual Supply Voltage :

70V

Additional Feature :

AVALANCHE RATED

Rise Time :

70ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

JESD-30 Code :

R-PSFM-T3

Product Category :

MOSFET

FET Type :

N-Channel

Element Configuration :

Single

Channel Mode :

Enhancement

Resistance :

11mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

Mount :

Through Hole

Nominal Vgs :

3.4 V

Terminal Position :

Single

Power Dissipation-Max :

360W Tc

Turn-Off Delay Time :

130 ns

Minimum Operating Temperature :

- 55 C

Published :

2000

DS Breakdown Voltage-Min :

70 V

Brand :

IXYS

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

REACH SVHC :

No SVHC

Number of Pins :

3

JEDEC-95 Code :

TO-247

Threshold Voltage :

3.4V

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-247AD (IXFH)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

70V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.011 Ω

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Vgs(th) (Max) @ Id :

3.4V @ 4mA

Drain to Source Voltage (Vdss) :

70V

Avalanche Energy Rating (Eas) :

2000 mJ

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

300 W

Mounting Style :

Through Hole

Manufacturer :

IXYS

Power Dissipation :

360W

Power Dissipation Ambient-Max :

360 W

Transistor Element Material :

SILICON

Series :

HiPerFET™

Product Type :

MOSFET

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Width :

5.3 mm

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Base Product Number :

IXFH76

Maximum Operating Temperature :

+ 175 C

Pulsed Drain Current-Max (IDM) :

304 A

Number of Elements :

1

Tradename :

HyperFET

Voltage - Rated DC :

70V

Fall Time (Typ) :

55 ns

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

76A

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED