IXFH76N07-11

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

130 ns

Pin Count :

3

Series :

HiPerFET™

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

76 A

Pulsed Drain Current-Max (IDM) :

304 A

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Lead Free :

Lead Free

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Tradename :

HyperFET

Product Status :

Not For New Designs

FET Type :

N-Channel

Length :

16.26 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

3.4V @ 4mA

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Rise Time :

70ns

Width :

5.3 mm

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

70 V

Drain-source On Resistance-Max :

0.011 Ω

Resistance :

11mOhm

Nominal Vgs :

3.4 V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Height :

21.46 mm

Threshold Voltage :

3.4V

Configuration :

Single

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Voltage - Rated DC :

70V

Maximum Operating Temperature :

+ 175 C

Dual Supply Voltage :

70V

Package :

Tube

Power Dissipation-Max :

360W Tc

Power Dissipation Ambient-Max :

360 W

Power Dissipation-Max (Abs) :

300 W

ECCN Code :

EAR99

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

70V

Drain to Source Voltage (Vdss) :

70V

Operating Temperature :

-55°C~175°C TJ

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-247

Package / Case :

TO-247-3

Power Dissipation (Max) :

360W (Tc)

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Number of Terminals :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

55 ns

Terminal Position :

Single

Number of Elements :

1

Mount :

Through Hole

Published :

2000

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

Not Applicable

Pbfree Code :

yes

Base Product Number :

IXFH76

Product Category :

MOSFET

Continuous Drain Current (ID) :

76A

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

Brand :

IXYS

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

360W

Factory Lead Time :

8 Weeks

Supplier Device Package :

TO-247AD (IXFH)

Current Rating :

76A

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

2000 mJ

Element Configuration :

Single