IXFH75N10Q
- Mfr.Part #
- IXFH75N10Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 28 ns
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-247
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFH75
- Number of Pins :
- 3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Radiation Hardening :
- No
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 65ns
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 75 A
- Power Dissipation :
- 300W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 37.5A, 10V
- FET Feature :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Supplier Device Package :
- TO-247AD (IXFH)
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.02Ohm
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- FET Type :
- N-Channel
- Series :
- HiPerFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Terminal Position :
- Single
- Published :
- 1999
- Turn-Off Delay Time :
- 65 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 100V
- DS Breakdown Voltage-Min :
- 100 V
- Power Dissipation-Max (Abs) :
- 300 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 300W (Tc)
- Surface Mount :
- No
- Package / Case :
- TO-247-3
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Datasheets
- IXFH75N10Q

N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 3700pF @ 25V 180nC @ 10V 100V TO-247-3
IXFH75N10Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH75N10Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 300 A.
a 100V drain to source voltage (Vdss)
IXFH75N10Q Applications
There are a lot of IXYS
IXFH75N10Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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