IXFH75N10Q

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Mfr.Part #
IXFH75N10Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247AD
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
28 ns
Mount :
Through Hole
Case Connection :
DRAIN
JEDEC-95 Code :
TO-247
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Product Status :
Obsolete
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Base Product Number :
IXFH75
Number of Pins :
3
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Radiation Hardening :
No
Manufacturer :
IXYS Corporation
Rise Time :
65ns
Continuous Drain Current (ID) :
75A
Power Dissipation-Max :
300W Tc
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
75 A
Power Dissipation :
300W
ECCN Code :
EAR99
Number of Elements :
1
Avalanche Energy Rating (Eas) :
1500 mJ
Rds On (Max) @ Id, Vgs :
20m Ω @ 37.5A, 10V
FET Feature :
--
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Supplier Device Package :
TO-247AD (IXFH)
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
RoHS Status :
RoHS Compliant
JESD-609 Code :
e1
Drain-source On Resistance-Max :
0.02Ohm
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Pin Count :
3
FET Type :
N-Channel
Series :
HiPerFET™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
300 A
Terminal Position :
Single
Published :
1999
Turn-Off Delay Time :
65 ns
Drain to Source Voltage (Vdss) :
100V
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
100V
DS Breakdown Voltage-Min :
100 V
Power Dissipation-Max (Abs) :
300 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
300W (Tc)
Surface Mount :
No
Package / Case :
TO-247-3
Package :
Tube
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Datasheets
IXFH75N10Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH75N10Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH75N10Q pinout, IXFH75N10Q datasheet PDF, IXFH75N10Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH75N10Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH75N10Q


N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 3700pF @ 25V 180nC @ 10V 100V TO-247-3

IXFH75N10Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH75N10Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 300 A.
a 100V drain to source voltage (Vdss)


IXFH75N10Q Applications


There are a lot of IXYS
IXFH75N10Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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