IXFH75N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Current Rating :

75A

Product Status :

Not For New Designs

Element Configuration :

Single

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

100V

Package Shape :

RECTANGULAR

Factory Lead Time :

8 Weeks

RoHS :

Details

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 4mA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-609 Code :

e1

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-247AD (IXFH)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Published :

2000

Drain Current-Max (Abs) (ID) :

75 A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Pbfree Code :

yes

Threshold Voltage :

4V

Resistance :

20mOhm

Tradename :

HyperFET

Brand :

IXYS

Surface Mount :

No

Number of Pins :

3

Power Dissipation-Max :

300W Tc

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

300 A

Power Dissipation Ambient-Max :

300 W

Manufacturer :

IXYS

Mounting Style :

Through Hole

Product Type :

MOSFET

Number of Terminations :

3

Configuration :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Nominal Vgs :

4 V

Rise Time :

60ns

Power Dissipation-Max (Abs) :

300 W

JESD-30 Code :

R-PSFM-T3

Length :

16.26 mm

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

20m Ω @ 37.5A, 10V

Power Dissipation (Max) :

300W (Tc)

Packaging :

Tube

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Polarity :

N-Channel

Fall Time (Typ) :

60 ns

REACH SVHC :

No SVHC

Dual Supply Voltage :

100V

FET Feature :

--

JEDEC-95 Code :

TO-247

Radiation Hardening :

No

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.02 Ω

Number of Terminals :

3

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

75A

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Package :

Tube

Transistor Element Material :

SILICON

Height :

21.46 mm

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Series :

HiPerFET™

Turn-Off Delay Time :

80 ns

Mounting Type :

Through Hole

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Through Hole

Base Product Number :

IXFH75

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100 V

Width :

5.3 mm

Gate to Source Voltage (Vgs) :

20V