IXFH75N10

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Mfr.Part #
IXFH75N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247AD
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
75 A
Power Dissipation Ambient-Max :
300 W
Additional Feature :
AVALANCHE RATED
Height :
21.46 mm
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 4mA
Continuous Drain Current (ID) :
75A
Drain to Source Voltage (Vdss) :
100V
Element Configuration :
Single
Power Dissipation-Max (Abs) :
300 W
Channel Mode :
Enhancement
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Brand :
IXYS
Threshold Voltage :
4V
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
RoHS :
Details
Mount :
Through Hole
Case Connection :
DRAIN
Width :
5.3 mm
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
HiPerFET™
JESD-609 Code :
e1
ECCN Code :
EAR99
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
300 A
Transistor Application :
SWITCHING
Resistance :
20mOhm
Published :
2000
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Factory Lead Time :
8 Weeks
JEDEC-95 Code :
TO-247
Qualification Status :
Not Qualified
Base Product Number :
IXFH75
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Radiation Hardening :
No
Pin Count :
3
Rds On (Max) @ Id, Vgs :
20m Ω @ 37.5A, 10V
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 150 C
Nominal Vgs :
4 V
Mounting Style :
Through Hole
Tradename :
HyperFET
Drain to Source Breakdown Voltage :
100V
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
- 55 C
Power Dissipation :
300W
Terminal Position :
Single
Package :
Tube
Surface Mount :
No
Transistor Type :
1 N-Channel
Current Rating :
75A
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Product Type :
MOSFET
Length :
16.26 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
75A Tc
FET Feature :
--
Rise Time :
60ns
Drain-source On Resistance-Max :
0.02 Ω
FET Type :
N-Channel
Fall Time (Typ) :
60 ns
Voltage - Rated DC :
100V
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
300W Tc
Product Status :
Not For New Designs
Package / Case :
TO-247-3
Dual Supply Voltage :
100V
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
Not Applicable
Turn-Off Delay Time :
80 ns
Power Dissipation (Max) :
300W (Tc)
Supplier Device Package :
TO-247AD (IXFH)
REACH SVHC :
No SVHC
Vgs (Max) :
±20V
Number of Pins :
3
Product Category :
MOSFET
DS Breakdown Voltage-Min :
100 V
Datasheets
IXFH75N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH75N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFH75N10 pinout, IXFH75N10 datasheet PDF, IXFH75N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH75N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH75N10


N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3

IXFH75N10 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 75 A.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH75N10 Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 300 A.
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IXFH75N10 Applications


There are a lot of IXYS
IXFH75N10 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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