IXFH75N10
- Mfr.Part #
- IXFH75N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 75 A
- Power Dissipation Ambient-Max :
- 300 W
- Additional Feature :
- AVALANCHE RATED
- Height :
- 21.46 mm
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Continuous Drain Current (ID) :
- 75A
- Drain to Source Voltage (Vdss) :
- 100V
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 300 W
- Channel Mode :
- Enhancement
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Brand :
- IXYS
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Width :
- 5.3 mm
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HiPerFET™
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Transistor Application :
- SWITCHING
- Resistance :
- 20mOhm
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Factory Lead Time :
- 8 Weeks
- JEDEC-95 Code :
- TO-247
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFH75
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Radiation Hardening :
- No
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 37.5A, 10V
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Nominal Vgs :
- 4 V
- Mounting Style :
- Through Hole
- Tradename :
- HyperFET
- Drain to Source Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 300W
- Terminal Position :
- Single
- Package :
- Tube
- Surface Mount :
- No
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 75A
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Length :
- 16.26 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- FET Feature :
- --
- Rise Time :
- 60ns
- Drain-source On Resistance-Max :
- 0.02 Ω
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 60 ns
- Voltage - Rated DC :
- 100V
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 300W Tc
- Product Status :
- Not For New Designs
- Package / Case :
- TO-247-3
- Dual Supply Voltage :
- 100V
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Turn-Off Delay Time :
- 80 ns
- Power Dissipation (Max) :
- 300W (Tc)
- Supplier Device Package :
- TO-247AD (IXFH)
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 100 V
- Datasheets
- IXFH75N10

N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3
IXFH75N10 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 75 A.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH75N10 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 300 A.
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IXFH75N10 Applications
There are a lot of IXYS
IXFH75N10 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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