IXFH75N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Fall Time (Typ) :

60 ns

Base Product Number :

IXFH75

Drain to Source Voltage (Vdss) :

100V

Power Dissipation Ambient-Max :

300 W

Product Category :

MOSFET

Transistor Element Material :

SILICON

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

20m Ω @ 37.5A, 10V

Number of Pins :

3

FET Feature :

--

Surface Mount :

No

Pbfree Code :

yes

Package :

Tube

Threshold Voltage :

4V

Product Type :

MOSFET

Mounting Type :

Through Hole

Supplier Device Package :

TO-247AD (IXFH)

Manufacturer :

IXYS

Power Dissipation-Max :

300W Tc

Drain Current-Max (Abs) (ID) :

75 A

Mount :

Through Hole

Continuous Drain Current (ID) :

75A

Series :

HiPerFET™

Number of Channels :

1 Channel

Number of Terminations :

3

Packaging :

Tube

Current Rating :

75A

Brand :

IXYS

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Tradename :

HyperFET

Dual Supply Voltage :

100V

Power Dissipation :

300W

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Pin Count :

3

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

Not Applicable

Configuration :

Single

Drain-source On Resistance-Max :

0.02 Ω

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

DS Breakdown Voltage-Min :

100 V

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-247-3

Nominal Vgs :

4 V

Length :

16.26 mm

Number of Terminals :

3

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Power Dissipation-Max (Abs) :

300 W

Vgs (Max) :

±20V

Height :

21.46 mm

Width :

5.3 mm

Product Status :

Not For New Designs

Rise Time :

60ns

RoHS :

Details

Turn-Off Delay Time :

80 ns

Vgs(th) (Max) @ Id :

4V @ 4mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2000

Pulsed Drain Current-Max (IDM) :

300 A

FET Type :

N-Channel

Element Configuration :

Single

Resistance :

20mOhm

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Case Connection :

DRAIN

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V

Terminal Position :

Single