IXFH74N20P
- Mfr.Part #
- IXFH74N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A TO247AD
- Stock
- 15,399
- In Stock :
- 15,399
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Package Type :
- TO-247
- Pulsed Drain Current-Max (IDM) :
- 200A
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 21ns
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Turn On Delay Time :
- 23 ns
- FET Feature :
- --
- Terminal Position :
- Single
- Minimum Operating Temperature :
- -55 °C
- Maximum Operating Temperature :
- +175 °C
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Height :
- 21.46mm
- Power Dissipation :
- 480W
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- Configuration :
- Single
- Number of Elements per Chip :
- 1
- Continuous Drain Current (ID) :
- 74A
- JEDEC-95 Code :
- TO-247
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 200V
- Channel Type :
- N
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Length :
- 16.26mm
- Mounting Type :
- Through Hole
- Packaging :
- Box
- Product Type :
- MOSFET
- Package :
- Box
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2006
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 200V
- Drain-source On Resistance-Max :
- 0.034 Ω
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 74 A
- Series :
- PolarHT™ HiPerFET™
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Type :
- PolarHT Power MOSFET HiPerFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 480W (Tc)
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-247-3
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 3
- Width :
- 5.3mm
- Surface Mount :
- No
- Product Category :
- MOSFET
- Power Dissipation-Max (Abs) :
- 480 W
- Power Dissipation-Max :
- 480W Tc
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- HiPerFET
- Factory Lead Time :
- 30 Weeks
- Supplier Device Package :
- TO-247AD (IXFH)
- Turn-Off Delay Time :
- 60 ns
- RoHS :
- Details
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFH74
- Fall Time (Typ) :
- 21 ns
- Resistance :
- 34mOhm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- DS Breakdown Voltage-Min :
- 200 V
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFH74N20P
IXFH74N20P Documents

N-Channel Box 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-247-3
IXFH74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXFH74N20P Applications
There are a lot of IXYS
IXFH74N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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