IXFH74N20P
- Mfr.Part #
- IXFH74N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A TO247AD
- Stock
- 15,399
- In Stock :
- 15,399
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- N
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Resistance :
- 34mOhm
- Product Category :
- MOSFET
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 200A
- Turn-Off Delay Time :
- 60 ns
- Power Dissipation (Max) :
- 480W (Tc)
- Drain Current-Max (Abs) (ID) :
- 74 A
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- -55 °C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Package :
- Box
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 21.46mm
- Product Status :
- Active
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 23 ns
- Terminal Position :
- Single
- Configuration :
- Single
- Type :
- PolarHT Power MOSFET HiPerFET
- Power Dissipation-Max (Abs) :
- 480 W
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 200V
- Tradename :
- HiPerFET
- Number of Pins :
- 3
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 200V
- Width :
- 5.3mm
- Maximum Operating Temperature :
- +175 °C
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Lead Free :
- Lead Free
- Package Type :
- TO-247
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Packaging :
- Box
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements per Chip :
- 1
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 480W
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 74A
- Number of Terminals :
- 3
- Base Product Number :
- IXFH74
- Case Connection :
- DRAIN
- Rise Time :
- 21ns
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PolarHT™ HiPerFET™
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.034 Ω
- Length :
- 16.26mm
- Number of Elements :
- 1
- Fall Time (Typ) :
- 21 ns
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 200 V
- Power Dissipation-Max :
- 480W Tc
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFH74N20P

N-Channel Box 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-247-3
IXFH74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXFH74N20P Applications
There are a lot of IXYS
IXFH74N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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