IXFH74N20P

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Mfr.Part #
IXFH74N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 74A TO247AD
Stock
15,399
In Stock :
15,399

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
N
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 25V
Resistance :
34mOhm
Product Category :
MOSFET
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
200A
Turn-Off Delay Time :
60 ns
Power Dissipation (Max) :
480W (Tc)
Drain Current-Max (Abs) (ID) :
74 A
Mounting Type :
Through Hole
Minimum Operating Temperature :
-55 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Channel Mode :
Enhancement
Surface Mount :
No
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code :
EAR99
JESD-30 Code :
R-PSFM-T3
Mounting Style :
Through Hole
Package :
Box
Vgs (Max) :
±20V
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Height :
21.46mm
Product Status :
Active
Pin Count :
3
Transistor Element Material :
SILICON
Turn On Delay Time :
23 ns
Terminal Position :
Single
Configuration :
Single
Type :
PolarHT Power MOSFET HiPerFET
Power Dissipation-Max (Abs) :
480 W
Brand :
IXYS
Drain to Source Breakdown Voltage :
200V
Tradename :
HiPerFET
Number of Pins :
3
RoHS :
Details
Drain to Source Voltage (Vdss) :
200V
Width :
5.3mm
Maximum Operating Temperature :
+175 °C
Vgs(th) (Max) @ Id :
5V @ 4mA
Lead Free :
Lead Free
Package Type :
TO-247
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Packaging :
Box
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Avalanche Energy Rating (Eas) :
1000 mJ
Rds On (Max) @ Id, Vgs :
34m Ω @ 37A, 10V
Supplier Device Package :
TO-247AD (IXFH)
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-247
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements per Chip :
1
Transistor Polarity :
N-Channel
Power Dissipation :
480W
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
FET Type :
N-Channel
Continuous Drain Current (ID) :
74A
Number of Terminals :
3
Base Product Number :
IXFH74
Case Connection :
DRAIN
Rise Time :
21ns
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
PolarHT™ HiPerFET™
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
30 Weeks
Transistor Application :
SWITCHING
JESD-609 Code :
e1
Number of Terminations :
3
Mount :
Through Hole
Number of Channels :
1 Channel
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.034 Ω
Length :
16.26mm
Number of Elements :
1
Fall Time (Typ) :
21 ns
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
200 V
Power Dissipation-Max :
480W Tc
Published :
2006
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFH74N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH74N20P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Type:PolarHT Power MOSFET HiPerFET, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, IXFH74N20P pinout, IXFH74N20P datasheet PDF, IXFH74N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH74N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH74N20P


N-Channel Box 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-247-3

IXFH74N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH74N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)


IXFH74N20P Applications


There are a lot of IXYS
IXFH74N20P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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