IXFH74N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Power Dissipation-Max (Abs) :

480 W

Vgs(th) (Max) @ Id :

5V @ 4mA

Configuration :

Single

Vgs (Max) :

±20V

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Height :

21.46mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

480W (Tc)

DS Breakdown Voltage-Min :

200 V

Supplier Device Package :

TO-247AD (IXFH)

Type :

PolarHT Power MOSFET HiPerFET

Rds On (Max) @ Id, Vgs :

34m Ω @ 37A, 10V

Manufacturer :

IXYS

Maximum Operating Temperature :

+175 °C

Resistance :

34mOhm

Minimum Operating Temperature :

-55 °C

Pbfree Code :

yes

Turn On Delay Time :

23 ns

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Reach Compliance Code :

Compliant

Surface Mount :

No

Package Type :

TO-247

Mount :

Through Hole

Packaging :

Box

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

74 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements per Chip :

1

Continuous Drain Current (ID) :

74A

Pin Count :

3

Turn-Off Delay Time :

60 ns

Terminal Position :

Single

Channel Type :

N

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247

Base Product Number :

IXFH74

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Published :

2006

Fall Time (Typ) :

21 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1000 mJ

Transistor Type :

1 N-Channel

Number of Elements :

1

Package :

Box

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Rise Time :

21ns

Series :

PolarHT™ HiPerFET™

Length :

16.26mm

RoHS :

Details

Number of Channels :

1 Channel

FET Feature :

--

Number of Pins :

3

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

200A

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Mounting Style :

Through Hole

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Drain-source On Resistance-Max :

0.034 Ω

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

ECCN Code :

EAR99

Tradename :

HiPerFET

Product Status :

Active

Power Dissipation :

480W

Width :

5.3mm

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

480W Tc

Element Configuration :

Single

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Number of Terminals :

3

JESD-609 Code :

e1