IXFH74N20

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Mfr.Part #
IXFH74N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 74A TO247AD
Stock
34,035
In Stock :
34,035

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
200V
Length :
16.26mm
Pin Count :
3
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
200A
Power Dissipation-Max (Abs) :
480 W
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Factory Lead Time :
30 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements per Chip :
1
Fall Time (Typ) :
21 ns
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
74 A
Package Type :
TO-247
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
200V
RoHS :
Details
Mount :
Through Hole
Channel Type :
N
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Pbfree Code :
yes
Power Dissipation-Max :
480W Tc
Transistor Application :
SWITCHING
Rise Time :
21ns
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Package :
Box
Reach Compliance Code :
Compliant
FET Feature :
--
Power Dissipation :
480W
Tradename :
HiPerFET
Type :
PolarHT Power MOSFET HiPerFET
Number of Terminations :
3
Brand :
IXYS
JESD-609 Code :
e1
Packaging :
Box
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-247AD (IXFH)
Mounting Type :
Through Hole
Base Product Number :
IXFH74
Package / Case :
TO-247-3
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
60 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Terminal Position :
Single
ECCN Code :
EAR99
Surface Mount :
No
Published :
2006
Product Category :
MOSFET
Manufacturer :
IXYS
Element Configuration :
Single
Product Status :
Active
Case Connection :
DRAIN
Continuous Drain Current (ID) :
74A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
-55 °C
Maximum Operating Temperature :
+175 °C
Turn On Delay Time :
23 ns
Height :
21.46mm
JEDEC-95 Code :
TO-247
Avalanche Energy Rating (Eas) :
1000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
200 V
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Width :
5.3mm
Product Type :
MOSFET
Power Dissipation (Max) :
480W (Tc)
Rds On (Max) @ Id, Vgs :
34m Ω @ 37A, 10V
Resistance :
34mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Drain-source On Resistance-Max :
0.034 Ω
Series :
PolarHT™ HiPerFET™
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 25V
Qualification Status :
Not Qualified
Datasheets
IXFH74N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH74N20 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Type:PolarHT Power MOSFET HiPerFET, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, IXFH74N20 pinout, IXFH74N20 datasheet PDF, IXFH74N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH74N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH74N20


N-Channel Box 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-247-3

IXFH74N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH74N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)


IXFH74N20P Applications


There are a lot of IXYS
IXFH74N20P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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