IXFH70N30Q3

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Mfr.Part #
IXFH70N30Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 70A TO247AD
Stock
11,482
In Stock :
11,482

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Transistor Element Material :
SILICON
Pin Count :
3
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
300V
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Number of Pins :
3
Power Dissipation :
830W
Mounting Style :
Through Hole
Published :
2011
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
54m Ω @ 35A, 10V
Turn-Off Delay Time :
38 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
33 ns
Height :
16.26mm
Product Category :
MOSFET
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™
Continuous Drain Current (ID) :
70A
Power Dissipation-Max :
830W Tc
Gate to Source Voltage (Vgs) :
30V
Drain-source On Resistance-Max :
0.054Ohm
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
RoHS :
Details
Power Dissipation-Max (Abs) :
830 W
Package :
Tube
Pulsed Drain Current-Max (IDM) :
210A
Drain to Source Breakdown Voltage :
300V
Tradename :
HiPerFET
Package Shape :
RECTANGULAR
Rise Time :
250ns
JEDEC-95 Code :
TO-247AD
FET Feature :
--
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
300 V
ECCN Code :
EAR99
Case Connection :
DRAIN
Number of Channels :
1 Channel
Width :
5.3mm
Transistor Application :
SWITCHING
Supplier Device Package :
TO-247AD (IXFH)
Mounting Type :
Through Hole
Power Dissipation (Max) :
830W (Tc)
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Number of Elements :
1
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
70 A
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
1500 mJ
Input Capacitance (Ciss) (Max) @ Vds :
4735pF @ 25V
Reach Compliance Code :
Unknown
Brand :
IXYS
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Factory Lead Time :
30 Weeks
Length :
16.26mm
Base Product Number :
IXFH70
Package / Case :
TO-247-3
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Datasheets
IXFH70N30Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH70N30Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, IXFH70N30Q3 pinout, IXFH70N30Q3 datasheet PDF, IXFH70N30Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH70N30Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH70N30Q3


N-Channel Tube 54m Ω @ 35A, 10V ±20V 4735pF @ 25V 98nC @ 10V 300V TO-247-3

IXFH70N30Q3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4735pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 70A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.70 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Peak drain current for this device is 210A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 33 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH70N30Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 210A.
a 300V drain to source voltage (Vdss)


IXFH70N30Q3 Applications


There are a lot of IXYS
IXFH70N30Q3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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