IXFH70N20Q3
- Mfr.Part #
- IXFH70N20Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 70A TO247AD
- Stock
- 9,642
- In Stock :
- 9,642
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 16.26mm
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Length :
- 16.26mm
- Number of Terminations :
- 3
- Channel Type :
- N
- Turn-Off Delay Time :
- 24 ns
- Number of Elements per Chip :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Product Category :
- MOSFET
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Maximum Operating Temperature :
- +150 °C
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- TO-247
- Minimum Operating Temperature :
- -55 °C
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 200V
- RoHS :
- Details
- Product Type :
- MOSFET
- Resistance :
- 40mOhm
- Base Product Number :
- IXFH70
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HiPerFET™
- Power Dissipation :
- 690W
- Supplier Device Package :
- TO-247AD (IXFH)
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 35A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3150pF @ 25V
- Fall Time (Typ) :
- 9 ns
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Tradename :
- HiPerFET
- Power Dissipation-Max :
- 690W Tc
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Drain to Source Breakdown Voltage :
- 200V
- Power Dissipation (Max) :
- 690W (Tc)
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 210A
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Product Status :
- Active
- Width :
- 5.3mm
- Published :
- 2011
- Rise Time :
- 10ns
- Manufacturer :
- IXYS
- Turn On Delay Time :
- 17 ns
- Continuous Drain Current (ID) :
- 70A
- Datasheets
- IXFH70N20Q3

N-Channel Tube 40m Ω @ 35A, 10V ±20V 3150pF @ 25V 67nC @ 10V 200V TO-247-3
IXFH70N20Q3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 70A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.Peak drain current for this device is 210A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH70N20Q3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 210A.
a 200V drain to source voltage (Vdss)
IXFH70N20Q3 Applications
There are a lot of IXYS
IXFH70N20Q3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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