IXFH70N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150 V

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Manufacturer :

IXYS Corporation

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Terminal Position :

Single

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Fall Time (Typ) :

23 ns

Continuous Drain Current (ID) :

70A

Terminal Form :

THROUGH-HOLE

Power Dissipation :

300W

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

300 W

Mount :

Through Hole

Number of Elements :

1

Published :

2003

Product Status :

Obsolete

Packaging :

Tube

Supplier Device Package :

TO-247AD (IXFH)

Turn-Off Delay Time :

70 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

HiPerFET™

Power Dissipation-Max :

300W Tc

Polarity/Channel Type :

N-Channel

FET Feature :

--

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

300 W

Drain-source On Resistance-Max :

0.028Ohm

Avalanche Energy Rating (Eas) :

1000 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

RoHS :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Min Operating Temperature :

-55 °C

Input Capacitance :

3.6 nF

ECCN Code :

EAR99

Drain to Source Resistance :

28 mΩ

Pulsed Drain Current-Max (IDM) :

280A

Case Connection :

DRAIN

Base Product Number :

IXFH70

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

70 A

Power Dissipation (Max) :

300W (Tc)

Rds On Max :

28 mΩ

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 4mA

Max Operating Temperature :

150 °C

RoHS Status :

RoHS Compliant

Package :

Tube

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Surface Mount :

No

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

28m Ω @ 35A, 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

52ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

150V

Number of Terminals :

3

Operating Mode :

ENHANCEMENT MODE