IXFH6N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

6A

Number of Terminals :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXFH6

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

Not Applicable

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

1.8 Ω

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2000

Lead Free :

Lead Free

JESD-609 Code :

e3

Product Status :

Obsolete

Number of Channels :

1

Drain to Source Voltage (Vdss) :

900V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

35

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

24A

DS Breakdown Voltage-Min :

900 V

Supplier Device Package :

TO-247AD (IXFH)

Power Dissipation (Max) :

300W (Tc)

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Power Dissipation-Max (Abs) :

180 W

Pin Count :

3

Voltage - Rated DC :

900V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Case Connection :

DRAIN

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Surface Mount :

No

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

2 Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Power Dissipation Ambient-Max :

180 W

Number of Terminations :

3

Current Rating :

6A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Resistance :

1.8Ohm

Power Dissipation-Max :

300W Tc

RoHS Status :

RoHS Compliant

Rise Time :

40ns

Series :

HiPerFET™

Drain Current-Max (Abs) (ID) :

6A

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR