IXFH6N120P
- Mfr.Part #
- IXFH6N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO247AD
- Stock
- 18,570
- In Stock :
- 18,570
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.26 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Base Product Number :
- IXFH6
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- 250W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±30V
- Rise Time :
- 11 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- HiPerFET
- JESD-609 Code :
- e1
- Factory Lead Time :
- 30 Weeks
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 1200V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Published :
- 2011
- Rds On (Max) @ Id, Vgs :
- 2.4 Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 6A
- DS Breakdown Voltage-Min :
- 1200V
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 250W Tc
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Package :
- Tube
- Type :
- Polar HiPerFET Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance :
- 2.83 nF
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Series :
- HiPerFET™, PolarP2™
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-247
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max (Abs) :
- 250 W
- Drain Current-Max (Abs) (ID) :
- 6A
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Max Power Dissipation :
- 250 W
- RoHS :
- Compliant
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2830pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Supplier Device Package :
- TO-247AD (IXFH)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 18A
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- Rds On Max :
- 2.4 Ω
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Height :
- 21.46 mm
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Datasheets
- IXFH6N120P

N-Channel Tube 2.4 Ω @ 500mA, 10V ±30V 2830pF @ 25V 92nC @ 10V 1200V TO-247-3
IXFH6N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2830pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6A.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 18A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH6N120P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 18A.
a 1200V drain to source voltage (Vdss)
IXFH6N120P Applications
There are a lot of IXYS
IXFH6N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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