IXFH6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

2.83 nF

Continuous Drain Current (ID) :

6A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Length :

16.26 mm

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 1mA

Factory Lead Time :

30 Weeks

Channel Mode :

Enhancement

Type :

Polar HiPerFET Power MOSFET

Product Type :

MOSFET

Package :

Tube

FET Type :

N-Channel

Max Power Dissipation :

250 W

Number of Terminations :

3

JEDEC-95 Code :

TO-247

Drain Current-Max (Abs) (ID) :

6A

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Surface Mount :

No

Series :

HiPerFET™, PolarP2™

Pulsed Drain Current-Max (IDM) :

18A

Packaging :

Tube

Width :

5.3 mm

Terminal Position :

Single

Power Dissipation (Max) :

250W (Tc)

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Number of Elements :

1

Mounting Style :

Through Hole

Rds On Max :

2.4 Ω

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Rise Time :

11 ns

Vgs (Max) :

±30V

Height :

21.46 mm

FET Feature :

--

Base Product Number :

IXFH6

Avalanche Energy Rating (Eas) :

300 mJ

Published :

2011

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Manufacturer :

IXYS

Brand :

IXYS

RoHS :

Compliant

Qualification Status :

Not Qualified

Product Status :

Active

Package / Case :

TO-247-3

JESD-609 Code :

e1

Drain to Source Voltage (Vdss) :

1200V

Power Dissipation-Max (Abs) :

250 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0024Ohm

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

DS Breakdown Voltage-Min :

1200V

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C