IXFH6N120P

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Mfr.Part #
IXFH6N120P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1200V 6A TO247AD
Stock
18,570
In Stock :
18,570

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
16.26 mm
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Base Product Number :
IXFH6
Transistor Polarity :
N-Channel
Pin Count :
3
Width :
5.3 mm
Power Dissipation (Max) :
250W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±30V
Rise Time :
11 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Tradename :
HiPerFET
JESD-609 Code :
e1
Factory Lead Time :
30 Weeks
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1200V
Vgs(th) (Max) @ Id :
5V @ 1mA
Published :
2011
Rds On (Max) @ Id, Vgs :
2.4 Ω @ 500mA, 10V
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Terminal Position :
Single
Continuous Drain Current (ID) :
6A
DS Breakdown Voltage-Min :
1200V
Reach Compliance Code :
Compliant
Power Dissipation-Max :
250W Tc
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Category :
MOSFET
Package :
Tube
Type :
Polar HiPerFET Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Input Capacitance :
2.83 nF
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Case Connection :
DRAIN
Series :
HiPerFET™, PolarP2™
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.0024Ohm
Number of Elements :
1
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Packaging :
Tube
JEDEC-95 Code :
TO-247
Channel Mode :
Enhancement
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max (Abs) :
250 W
Drain Current-Max (Abs) (ID) :
6A
Avalanche Energy Rating (Eas) :
300 mJ
Max Power Dissipation :
250 W
RoHS :
Compliant
Number of Terminals :
3
Input Capacitance (Ciss) (Max) @ Vds :
2830pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Supplier Device Package :
TO-247AD (IXFH)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
18A
Mounting Style :
Through Hole
Number of Terminations :
3
Rds On Max :
2.4 Ω
FET Type :
N-Channel
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Surface Mount :
No
Height :
21.46 mm
Transistor Type :
1 N-Channel
Brand :
IXYS
Datasheets
IXFH6N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:Polar HiPerFET Power MOSFET, Number of Terminations:3, IXFH6N120P pinout, IXFH6N120P datasheet PDF, IXFH6N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH6N120P


N-Channel Tube 2.4 Ω @ 500mA, 10V ±30V 2830pF @ 25V 92nC @ 10V 1200V TO-247-3

IXFH6N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2830pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6A.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 18A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH6N120P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 18A.
a 1200V drain to source voltage (Vdss)


IXFH6N120P Applications


There are a lot of IXYS
IXFH6N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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