IXFH6N120
- Mfr.Part #
- IXFH6N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO247AD
- Stock
- 18,229
- In Stock :
- 18,229
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 21.46 mm
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Supplier Device Package :
- TO-247AD (IXFH)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Length :
- 16.26 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Turn-Off Delay Time :
- 42 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Rise Time :
- 33ns
- FET Type :
- N-Channel
- Surface Mount :
- No
- Product Status :
- Active
- Number of Terminals :
- 3
- FET Feature :
- --
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 300W (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300W
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Fall Time (Typ) :
- 18 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 1.2kV
- JESD-30 Code :
- R-PSFM-T3
- Series :
- --
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 6A
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 30 Weeks
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 3A, 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Published :
- 2005
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- Product Type :
- MOSFET
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Subcategory :
- MOSFETs
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Width :
- 5.3 mm
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Base Product Number :
- IXFH6
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HyperFET
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 2.6 Ω
- DS Breakdown Voltage-Min :
- 1200 V
- RoHS :
- Details
- Number of Pins :
- 3
- Datasheets
- IXFH6N120

N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3
IXFH6N120 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 1950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=1.2kV, and ID flows to VDS at 1.2kVVDS, the drain-source breakdown voltage is 1.2kV in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH6N120 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 1200V drain to source voltage (Vdss)
IXFH6N120 Applications
There are a lot of IXYS
IXFH6N120 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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