IXFH6N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Product Category :

MOSFET

RoHS :

Details

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

6A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Base Product Number :

IXFH6

Package Shape :

RECTANGULAR

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 3A, 10V

Product Type :

MOSFET

Packaging :

Tube

Avalanche Energy Rating (Eas) :

500 mJ

Drain Current-Max (Abs) (ID) :

6A

Fall Time (Typ) :

18 ns

Power Dissipation :

300W

FET Type :

N-Channel

Element Configuration :

Single

Case Connection :

DRAIN

Length :

16.26 mm

Package :

Tube

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Terminals :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Brand :

IXYS

Width :

5.3 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

1200 V

Drain-source On Resistance-Max :

2.6 Ω

Pulsed Drain Current-Max (IDM) :

24A

Qualification Status :

Not Qualified

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

Transistor Type :

1 N-Channel

Series :

--

Terminal Position :

Single

Pin Count :

3

FET Feature :

--

Reach Compliance Code :

Compliant

Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Rise Time :

33ns

Mounting Type :

Through Hole

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Tradename :

HyperFET

Drain to Source Breakdown Voltage :

1.2kV

Height :

21.46 mm

Published :

2005

Manufacturer :

IXYS

Power Dissipation (Max) :

300W (Tc)

Mounting Style :

Through Hole

Turn-Off Delay Time :

42 ns

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

300W Tc

Drain to Source Voltage (Vdss) :

1200V

Supplier Device Package :

TO-247AD (IXFH)