IXFH6N120
- Mfr.Part #
- IXFH6N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO247AD
- Stock
- 18,229
- In Stock :
- 18,229
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Product Category :
- MOSFET
- RoHS :
- Details
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 30 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 6A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFH6
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AD
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 3A, 10V
- Product Type :
- MOSFET
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Drain Current-Max (Abs) (ID) :
- 6A
- Fall Time (Typ) :
- 18 ns
- Power Dissipation :
- 300W
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Length :
- 16.26 mm
- Package :
- Tube
- Subcategory :
- MOSFETs
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Brand :
- IXYS
- Width :
- 5.3 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 1200 V
- Drain-source On Resistance-Max :
- 2.6 Ω
- Pulsed Drain Current-Max (IDM) :
- 24A
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Transistor Type :
- 1 N-Channel
- Series :
- --
- Terminal Position :
- Single
- Pin Count :
- 3
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Rise Time :
- 33ns
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HyperFET
- Drain to Source Breakdown Voltage :
- 1.2kV
- Height :
- 21.46 mm
- Published :
- 2005
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 42 ns
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Voltage (Vdss) :
- 1200V
- Supplier Device Package :
- TO-247AD (IXFH)
- Datasheets
- IXFH6N120

N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3
IXFH6N120 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 1950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=1.2kV, and ID flows to VDS at 1.2kVVDS, the drain-source breakdown voltage is 1.2kV in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH6N120 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 1200V drain to source voltage (Vdss)
IXFH6N120 Applications
There are a lot of IXYS
IXFH6N120 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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