IXFH6N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Product Status :

Active

Channel Mode :

Enhancement

Brand :

IXYS

Number of Terminations :

3

Manufacturer :

IXYS

JEDEC-95 Code :

TO-247AD

Drain-source On Resistance-Max :

2.6 Ω

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Supplier Device Package :

TO-247AD (IXFH)

Pulsed Drain Current-Max (IDM) :

24A

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 3A, 10V

Number of Pins :

3

Package :

Tube

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

1.2kV

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Transistor Application :

SWITCHING

Published :

2005

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

HyperFET

Series :

--

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Base Product Number :

IXFH6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

33ns

Pin Count :

3

Height :

21.46 mm

Transistor Type :

1 N-Channel

Number of Elements :

1

Mounting Style :

Through Hole

Pbfree Code :

yes

DS Breakdown Voltage-Min :

1200 V

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Power Dissipation-Max :

300W Tc

Length :

16.26 mm

FET Feature :

--

Terminal Position :

Single

Continuous Drain Current (ID) :

6A

Mounting Type :

Through Hole

Power Dissipation :

300W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

42 ns

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

6A

Configuration :

Single

Factory Lead Time :

30 Weeks

Width :

5.3 mm

Avalanche Energy Rating (Eas) :

500 mJ

Vgs(th) (Max) @ Id :

5V @ 2.5mA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

1200V

Number of Terminals :

3

Case Connection :

DRAIN

FET Type :

N-Channel