IXFH6N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Radiation Hardening :

No

Pin Count :

3

Mounting Style :

Through Hole

Power Dissipation-Max (Abs) :

180 W

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation (Max) :

180W (Tc)

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

2Ohm

Factory Lead Time :

8 Weeks

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

1000 V

FET Feature :

--

Drain Current-Max (Abs) (ID) :

6A

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

1kV

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Reach Compliance Code :

Compliant

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

6A

Manufacturer :

IXYS

RoHS :

Details

Configuration :

Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

12 ns

Width :

5.3 mm

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Turn-Off Delay Time :

22 ns

Published :

2003

Number of Terminations :

3

Supplier Device Package :

TO-247AD (IXFH)

Length :

16.26 mm

Element Configuration :

Single

Power Dissipation-Max :

180W Tc

Number of Terminals :

3

Series :

HiPerFET™

Mount :

Through Hole

Height :

21.46 mm

Power Dissipation :

180W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

24A

Tradename :

HiPerFET

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Package :

Tube

Avalanche Energy Rating (Eas) :

700 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e1

Surface Mount :

No

Package / Case :

TO-247-3

Base Product Number :

IXFH6

Rise Time :

15ns

Product Category :

MOSFET

Brand :

IXYS