IXFH6N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

1kV

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Polarity/Channel Type :

N-Channel

Pin Count :

3

Length :

16.26 mm

Power Dissipation-Max (Abs) :

180 W

Published :

2003

Transistor Type :

1 N-Channel

Number of Pins :

3

Drain to Source Voltage (Vdss) :

1000V

Avalanche Energy Rating (Eas) :

700 mJ

Terminal Form :

THROUGH-HOLE

Package :

Tube

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Pbfree Code :

yes

RoHS :

Details

Element Configuration :

Single

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

180W (Tc)

JESD-30 Code :

R-PSFM-T3

Maximum Operating Temperature :

+ 150 C

Radiation Hardening :

No

Power Dissipation-Max :

180W Tc

Number of Elements :

1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Surface Mount :

No

Number of Terminals :

3

Channel Mode :

Enhancement

Product Status :

Active

Reach Compliance Code :

Compliant

Fall Time (Typ) :

12 ns

Mount :

Through Hole

Base Product Number :

IXFH6

JESD-609 Code :

e1

JEDEC-95 Code :

TO-247

Supplier Device Package :

TO-247AD (IXFH)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Configuration :

Single

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Product Type :

MOSFET

Turn-Off Delay Time :

22 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

6A

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.3 mm

FET Feature :

--

Height :

21.46 mm

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

2Ohm

Pulsed Drain Current-Max (IDM) :

24A

Additional Feature :

AVALANCHE RATED

Power Dissipation :

180W

Series :

HiPerFET™

DS Breakdown Voltage-Min :

1000 V