IXFH6N100F

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Mfr.Part #
IXFH6N100F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 6A TO247
Stock
1,632
In Stock :
1,632

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
700 mJ
Power Dissipation (Max) :
180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
1770pF @ 25V
Mounting Style :
Through Hole
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
24A
Power Dissipation-Max :
180W Tc
Continuous Drain Current (ID) :
6A
Transistor Application :
SWITCHING
Supplier Device Package :
TO-247 (IXFH)
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
31 ns
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFH6
Number of Terminations :
3
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e1
Resistance :
1.9Ohm
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Rise Time :
8.6ns
Number of Terminals :
3
DS Breakdown Voltage-Min :
1000 V
Factory Lead Time :
30 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
1.9 Ω
Pbfree Code :
yes
Package :
Tube
Transistor Polarity :
N-Channel
Manufacturer :
IXYS Corporation
Published :
2003
Number of Elements :
1
REACH SVHC :
No SVHC
Package / Case :
TO-247-3
Drain to Source Voltage (Vdss) :
1000V
Drain Current-Max (Abs) (ID) :
6A
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Power Dissipation :
180W
Drain to Source Breakdown Voltage :
1kV
Surface Mount :
No
FET Type :
N-Channel
Number of Channels :
1 Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-247
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
8.3 ns
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3A, 10V
Pin Count :
3
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Series :
HiPerRF™
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Package Shape :
RECTANGULAR
Packaging :
Tube
Datasheets
IXFH6N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N100F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, IXFH6N100F pinout, IXFH6N100F datasheet PDF, IXFH6N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH6N100F


N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-247-3

IXFH6N100F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH6N100F Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)


IXFH6N100F Applications


There are a lot of IXYS
IXFH6N100F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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