IXFH6N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Drain to Source Voltage (Vdss) :

1000V

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

700 mJ

Surface Mount :

No

REACH SVHC :

No SVHC

Product Status :

Active

Continuous Drain Current (ID) :

6A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Product Number :

IXFH6

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Fall Time (Typ) :

8.3 ns

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Factory Lead Time :

30 Weeks

Published :

2003

JEDEC-95 Code :

TO-247

ECCN Code :

EAR99

Number of Pins :

3

Supplier Device Package :

TO-247 (IXFH)

Number of Terminations :

3

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

JESD-609 Code :

e1

Channel Mode :

Enhancement

Power Dissipation (Max) :

180W (Tc)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

180W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation-Max :

180W Tc

DS Breakdown Voltage-Min :

1000 V

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

24A

Transistor Polarity :

N-Channel

Rise Time :

8.6ns

Case Connection :

DRAIN

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS Corporation

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Drain-source On Resistance-Max :

1.9 Ω

Drain to Source Breakdown Voltage :

1kV

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Package Shape :

RECTANGULAR

Series :

HiPerRF™

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Resistance :

1.9Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Turn-Off Delay Time :

31 ns

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Pin Count :

3

FET Feature :

--

Number of Elements :

1