IXFH6N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

24A

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

6A

Mounting Style :

Through Hole

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

1kV

Power Dissipation-Max :

180W Tc

REACH SVHC :

No SVHC

Power Dissipation (Max) :

180W (Tc)

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

1.9Ohm

Case Connection :

DRAIN

Drain-source On Resistance-Max :

1.9 Ω

Fall Time (Typ) :

8.3 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Factory Lead Time :

30 Weeks

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Series :

HiPerRF™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

31 ns

Supplier Device Package :

TO-247 (IXFH)

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Base Product Number :

IXFH6

Number of Channels :

1 Channel

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

700 mJ

Continuous Drain Current (ID) :

6A

FET Feature :

--

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

180W

Drain to Source Voltage (Vdss) :

1000V

Published :

2003

ECCN Code :

EAR99

Packaging :

Tube

DS Breakdown Voltage-Min :

1000 V

Number of Terminations :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Number of Terminals :

3

Rise Time :

8.6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package :

Tube

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247

FET Technology :

METAL-OXIDE SEMICONDUCTOR