IXFH6N100

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Mfr.Part #
IXFH6N100
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 6A TO247AD
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3A, 10V
Drain to Source Voltage (Vdss) :
1000V
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Channel Mode :
Enhancement
Package :
Tube
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Number of Terminations :
3
Surface Mount :
No
Power Dissipation (Max) :
180W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
180W Tc
Fall Time (Typ) :
8.3 ns
Drain-source On Resistance-Max :
1.9 Ω
Number of Elements :
1
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
700 mJ
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
FET Feature :
--
Power Dissipation :
180W
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Number of Pins :
3
Package / Case :
TO-247-3
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
DS Breakdown Voltage-Min :
1000 V
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Product Status :
Active
Polarity/Channel Type :
N-Channel
Series :
HiPerRF™
Factory Lead Time :
30 Weeks
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-247
Turn-Off Delay Time :
31 ns
Drain to Source Breakdown Voltage :
1kV
JESD-609 Code :
e1
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-247 (IXFH)
Published :
2003
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Type :
Through Hole
Manufacturer :
IXYS Corporation
Resistance :
1.9Ohm
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
24A
Base Product Number :
IXFH6
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Terminal Position :
Single
Rise Time :
8.6ns
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
6A
Continuous Drain Current (ID) :
6A
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFH6N100 pinout, IXFH6N100 datasheet PDF, IXFH6N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH6N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH6N100


N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-247-3

IXFH6N100F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH6N100F Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)


IXFH6N100F Applications


There are a lot of IXYS
IXFH6N100F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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