IXFH6N100
- Mfr.Part #
- IXFH6N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 8.3 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Mounting Type :
- Through Hole
- Rise Time :
- 8.6ns
- Factory Lead Time :
- 30 Weeks
- Continuous Drain Current (ID) :
- 6A
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 24A
- Number of Elements :
- 1
- Base Product Number :
- IXFH6
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 1000V
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 1000 V
- Product Status :
- Active
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 180W Tc
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-247 (IXFH)
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 180W
- Vgs (Max) :
- ±20V
- Series :
- HiPerRF™
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.9 Ω @ 3A, 10V
- Resistance :
- 1.9Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- FET Feature :
- --
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 6A
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Published :
- 2003
- Power Dissipation (Max) :
- 180W (Tc)
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 1kV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS Corporation
- Drain-source On Resistance-Max :
- 1.9 Ω
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- JEDEC-95 Code :
- TO-247
- Turn-Off Delay Time :
- 31 ns
- Datasheets
- IXFH6N100

N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-247-3
IXFH6N100F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH6N100F Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)
IXFH6N100F Applications
There are a lot of IXYS
IXFH6N100F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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