IXFH6N100
- Mfr.Part #
- IXFH6N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 30 Weeks
- Power Dissipation-Max :
- 180W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 6A
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Power Dissipation (Max) :
- 180W (Tc)
- Supplier Device Package :
- TO-247 (IXFH)
- Drain Current-Max (Abs) (ID) :
- 6A
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFH6
- Fall Time (Typ) :
- 8.3 ns
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Resistance :
- 1.9Ohm
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Rise Time :
- 8.6ns
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 1000 V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS Corporation
- Power Dissipation :
- 180W
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 24A
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS Status :
- ROHS3 Compliant
- Series :
- HiPerRF™
- Minimum Operating Temperature :
- - 55 C
- JEDEC-95 Code :
- TO-247
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 1kV
- Rds On (Max) @ Id, Vgs :
- 1.9 Ω @ 3A, 10V
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 31 ns
- Drain-source On Resistance-Max :
- 1.9 Ω
- Case Connection :
- DRAIN
- Package / Case :
- TO-247-3
- Datasheets
- IXFH6N100

N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-247-3
IXFH6N100F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH6N100F Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)
IXFH6N100F Applications
There are a lot of IXYS
IXFH6N100F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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