IXFH69N30P
- Mfr.Part #
- IXFH69N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 69A TO247AD
- Stock
- 980
- In Stock :
- 980
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Turn-Off Delay Time :
- 75 ns
- Number of Elements :
- 1
- Maximum Operating Temperature :
- +150 °C
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 27 ns
- Drain to Source Breakdown Voltage :
- 300V
- Package / Case :
- TO-247-3
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 500 W
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Published :
- 2006
- Drain-source On Resistance-Max :
- 0.049Ohm
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 500W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 500W
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Elements per Chip :
- 1
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 300V
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Product Status :
- Active
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Packaging :
- Tube
- Rise Time :
- 25ns
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- -55 °C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 69A
- DS Breakdown Voltage-Min :
- 300 V
- Tradename :
- HiPerFET
- Series :
- PolarHT™ HiPerFET™
- Power Dissipation-Max :
- 500W Tc
- Package Type :
- TO-247
- Channel Mode :
- Enhancement
- Type :
- PolarHT HiPerFET Power MOSFET
- Width :
- 5.3mm
- FET Feature :
- --
- Package :
- Box
- Number of Pins :
- 3
- Mount :
- Through Hole
- RoHS :
- Details
- Base Product Number :
- IXFH69
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Additional Feature :
- AVALANCHE RATED
- Length :
- 16.26mm
- Height :
- 21.46mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Factory Lead Time :
- 20 Weeks
- Drain Current-Max (Abs) (ID) :
- 69 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Type :
- N
- Turn On Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4960pF @ 25V
- Datasheets
- IXFH69N30P

N-Channel Tube 49m Ω @ 500mA, 10V ±20V 4960pF @ 25V 180nC @ 10V 300V TO-247-3
IXFH69N30P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4960pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 69A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.69 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH69N30P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)
IXFH69N30P Applications
There are a lot of IXYS
IXFH69N30P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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