IXFH69N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Channel Type :

N

Series :

PolarHT™ HiPerFET™

Brand :

IXYS

Surface Mount :

No

Tradename :

HiPerFET

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Fall Time (Typ) :

27 ns

Manufacturer :

IXYS

Pin Count :

3

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

DS Breakdown Voltage-Min :

300 V

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

300V

Height :

21.46mm

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

500 W

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Mounting Type :

Through Hole

Configuration :

Single

Terminal Position :

Single

ECCN Code :

EAR99

Length :

16.26mm

Vgs(th) (Max) @ Id :

5V @ 4mA

JEDEC-95 Code :

TO-247AD

Number of Elements :

1

Drain to Source Voltage (Vdss) :

300V

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Type :

PolarHT HiPerFET Power MOSFET

Turn-Off Delay Time :

75 ns

Power Dissipation-Max :

500W Tc

Drain Current-Max (Abs) (ID) :

69 A

Number of Terminations :

3

Rise Time :

25ns

Maximum Operating Temperature :

+150 °C

Power Dissipation :

500W

Element Configuration :

Single

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

69A

RoHS :

Details

Published :

2006

Product Status :

Active

Turn On Delay Time :

25 ns

Qualification Status :

Not Qualified

Package Type :

TO-247

Power Dissipation (Max) :

500W (Tc)

Avalanche Energy Rating (Eas) :

1500 mJ

Minimum Operating Temperature :

-55 °C

Lead Free :

Lead Free

Supplier Device Package :

TO-247AD (IXFH)

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Base Product Number :

IXFH69

Package :

Box

Pulsed Drain Current-Max (IDM) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

4960pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Width :

5.3mm

Mount :

Through Hole

Number of Elements per Chip :

1

Drain-source On Resistance-Max :

0.049Ohm