IXFH69N30P

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Mfr.Part #
IXFH69N30P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 69A TO247AD
Stock
980
In Stock :
980

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements per Chip :
1
Factory Lead Time :
20 Weeks
Transistor Type :
1 N-Channel
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Product Status :
Active
Channel Mode :
Enhancement
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
69A Tc
Power Dissipation (Max) :
500W (Tc)
Package :
Box
Turn On Delay Time :
25 ns
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
300 V
Drain to Source Voltage (Vdss) :
300V
FET Type :
N-Channel
Tradename :
HiPerFET
Length :
16.26mm
Drain Current-Max (Abs) (ID) :
69 A
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Product Category :
MOSFET
Series :
PolarHT™ HiPerFET™
Packaging :
Tube
Vgs(th) (Max) @ Id :
5V @ 4mA
Mount :
Through Hole
Product Type :
MOSFET
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Pbfree Code :
yes
Configuration :
Single
Transistor Application :
SWITCHING
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
49m Ω @ 500mA, 10V
JEDEC-95 Code :
TO-247AD
Terminal Form :
THROUGH-HOLE
Rise Time :
25ns
Drain to Source Breakdown Voltage :
300V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max (Abs) :
500 W
Input Capacitance (Ciss) (Max) @ Vds :
4960pF @ 25V
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
RoHS :
Details
Avalanche Energy Rating (Eas) :
1500 mJ
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
500W
Terminal Position :
Single
Channel Type :
N
Supplier Device Package :
TO-247AD (IXFH)
Element Configuration :
Single
Lead Free :
Lead Free
Maximum Operating Temperature :
+150 °C
Number of Terminations :
3
Minimum Operating Temperature :
-55 °C
Base Product Number :
IXFH69
Continuous Drain Current (ID) :
69A
Published :
2006
Number of Pins :
3
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
27 ns
Pulsed Drain Current-Max (IDM) :
200A
Drain-source On Resistance-Max :
0.049Ohm
RoHS Status :
ROHS3 Compliant
Type :
PolarHT HiPerFET Power MOSFET
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Channels :
1 Channel
Package Type :
TO-247
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Width :
5.3mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Height :
21.46mm
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
500W Tc
Package Shape :
RECTANGULAR
JESD-609 Code :
e1
Package / Case :
TO-247-3
Turn-Off Delay Time :
75 ns
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXFH69N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH69N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH69N30P pinout, IXFH69N30P datasheet PDF, IXFH69N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH69N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH69N30P


N-Channel Tube 49m Ω @ 500mA, 10V ±20V 4960pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH69N30P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4960pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 69A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.69 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH69N30P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)


IXFH69N30P Applications


There are a lot of IXYS
IXFH69N30P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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