IXFH67N10

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Mfr.Part #
IXFH67N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 67A TO-247AD
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH67
Series :
HiPerFET™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
300W Tc
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Voltage - Rated DC :
100V
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.025Ohm
ECCN Code :
EAR99
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Power Dissipation (Max) :
300W (Tc)
Current - Continuous Drain (Id) @ 25°C :
67A Tc
Number of Elements :
1
Power Dissipation Ambient-Max :
300 W
Rds On (Max) @ Id, Vgs :
25m Ω @ 33.5A, 10V
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Height :
21.46 mm
Element Configuration :
Single
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Case Connection :
DRAIN
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
67A
Tradename :
HyperFET
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
268A
Drain to Source Voltage (Vdss) :
100V
Width :
5.3 mm
Pbfree Code :
yes
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Mount :
Through Hole
Power Dissipation-Max (Abs) :
300 W
Drain to Source Breakdown Voltage :
100V
Brand :
IXYS
Fall Time (Typ) :
60 ns
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
Not Applicable
Current Rating :
67A
Product Category :
MOSFET
Rise Time :
60ns
Package Shape :
RECTANGULAR
Pin Count :
3
Power Dissipation :
300W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Number of Channels :
1 Channel
Published :
2000
Turn-Off Delay Time :
80 ns
Transistor Element Material :
SILICON
Configuration :
Single
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
DS Breakdown Voltage-Min :
100 V
Reach Compliance Code :
Compliant
Length :
16.26 mm
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
67 A
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Product Status :
Not For New Designs
Number of Terminations :
3
Mounting Type :
Through Hole
Manufacturer :
IXYS
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Datasheets
IXFH67N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH67N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH67N10 pinout, IXFH67N10 datasheet PDF, IXFH67N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH67N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH67N10


N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3

IXFH67N10 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 67A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Drain current refers to the maximum continuous current a device can conduct, and it is 67 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 268A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100 V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH67N10 Features


a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)


IXFH67N10 Applications


There are a lot of IXYS
IXFH67N10 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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