IXFH66N20Q

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Mfr.Part #
IXFH66N20Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 66A TO247AD
Stock
18,014
In Stock :
18,014

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
200 V
Gate to Source Voltage (Vgs) :
30V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Power Dissipation :
400W
Rise Time :
18ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Number of Elements :
1
Package :
Tube
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-247AD
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
Series :
HiPerFET™
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Published :
2003
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation-Max :
400W Tc
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
14 ns
Transistor Application :
SWITCHING
Case Connection :
DRAIN
FET Type :
N-Channel
Manufacturer :
IXYS Corporation
Number of Terminals :
3
Drain to Source Breakdown Voltage :
200V
Package / Case :
TO-247-3
Drain to Source Voltage (Vdss) :
200V
FET Feature :
--
Rds On (Max) @ Id, Vgs :
40m Ω @ 33A, 10V
Pulsed Drain Current-Max (IDM) :
264A
Number of Terminations :
3
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Mount :
Through Hole
Continuous Drain Current (ID) :
66A
Vgs (Max) :
±30V
Base Product Number :
IXFH66
Power Dissipation (Max) :
400W (Tc)
Product Status :
Obsolete
Packaging :
Tube
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
50 ns
Vgs(th) (Max) @ Id :
4V @ 4mA
Element Configuration :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
1500 mJ
Drain-source On Resistance-Max :
0.04Ohm
RoHS Status :
RoHS Compliant
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
ECCN Code :
EAR99
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Datasheets
IXFH66N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH66N20Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH66N20Q pinout, IXFH66N20Q datasheet PDF, IXFH66N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH66N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH66N20Q


N-Channel Tube 40m Ω @ 33A, 10V ±30V 3700pF @ 25V 105nC @ 10V 200V TO-247-3

IXFH66N20Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3700pF @ 25V.This device conducts a continuous drain current (ID) of 66A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 264A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH66N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 264A.
a 200V drain to source voltage (Vdss)


IXFH66N20Q Applications


There are a lot of IXYS
IXFH66N20Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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