IXFH66N20Q

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Mfr.Part #
IXFH66N20Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 66A TO247AD
Stock
18,014
In Stock :
18,014

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
14 ns
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Drain to Source Breakdown Voltage :
200V
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
66A
Base Product Number :
IXFH66
Terminal Position :
Single
Mount :
Through Hole
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
18ns
JEDEC-95 Code :
TO-247AD
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Rds On (Max) @ Id, Vgs :
40m Ω @ 33A, 10V
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
4V @ 4mA
Turn-Off Delay Time :
50 ns
Transistor Application :
SWITCHING
Number of Pins :
3
Power Dissipation :
400W
Vgs (Max) :
±30V
RoHS Status :
RoHS Compliant
Series :
HiPerFET™
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Supplier Device Package :
TO-247AD (IXFH)
Manufacturer :
IXYS Corporation
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2003
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
200V
Drain-source On Resistance-Max :
0.04Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
200 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
400W Tc
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
Qualification Status :
Not Qualified
Number of Terminals :
3
Mounting Type :
Through Hole
Element Configuration :
Single
Product Status :
Obsolete
Number of Elements :
1
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
264A
FET Feature :
--
ECCN Code :
EAR99
Power Dissipation (Max) :
400W (Tc)
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
1500 mJ
Datasheets
IXFH66N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH66N20Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFH66N20Q pinout, IXFH66N20Q datasheet PDF, IXFH66N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH66N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH66N20Q


N-Channel Tube 40m Ω @ 33A, 10V ±30V 3700pF @ 25V 105nC @ 10V 200V TO-247-3

IXFH66N20Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3700pF @ 25V.This device conducts a continuous drain current (ID) of 66A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 264A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH66N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 264A.
a 200V drain to source voltage (Vdss)


IXFH66N20Q Applications


There are a lot of IXYS
IXFH66N20Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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