IXFH66N20Q
- Mfr.Part #
- IXFH66N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 66A TO247AD
- Stock
- 18,014
- In Stock :
- 18,014
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 14 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Drain to Source Breakdown Voltage :
- 200V
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 66A
- Base Product Number :
- IXFH66
- Terminal Position :
- Single
- Mount :
- Through Hole
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 18ns
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 66A Tc
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 33A, 10V
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Turn-Off Delay Time :
- 50 ns
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Power Dissipation :
- 400W
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Series :
- HiPerFET™
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Supplier Device Package :
- TO-247AD (IXFH)
- Manufacturer :
- IXYS Corporation
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2003
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Drain-source On Resistance-Max :
- 0.04Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 200 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 400W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Product Status :
- Obsolete
- Number of Elements :
- 1
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 264A
- FET Feature :
- --
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 400W (Tc)
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Datasheets
- IXFH66N20Q

N-Channel Tube 40m Ω @ 33A, 10V ±30V 3700pF @ 25V 105nC @ 10V 200V TO-247-3
IXFH66N20Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3700pF @ 25V.This device conducts a continuous drain current (ID) of 66A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 264A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH66N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 264A.
a 200V drain to source voltage (Vdss)
IXFH66N20Q Applications
There are a lot of IXYS
IXFH66N20Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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