IXFH66N20Q
- Mfr.Part #
- IXFH66N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 66A TO247AD
- Stock
- 18,014
- In Stock :
- 18,014
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 33A, 10V
- Power Dissipation (Max) :
- 400W (Tc)
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Power Dissipation :
- 400W
- Drain-source On Resistance-Max :
- 0.04Ohm
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2003
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- FET Feature :
- --
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 200 V
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 264A
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 18ns
- Drain to Source Voltage (Vdss) :
- 200V
- Supplier Device Package :
- TO-247AD (IXFH)
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 66A
- Number of Pins :
- 3
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 200V
- Manufacturer :
- IXYS Corporation
- Element Configuration :
- Single
- Base Product Number :
- IXFH66
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Series :
- HiPerFET™
- Power Dissipation-Max :
- 400W Tc
- Fall Time (Typ) :
- 14 ns
- JEDEC-95 Code :
- TO-247AD
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 66A Tc
- Product Status :
- Obsolete
- Package :
- Tube
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXFH66N20Q

N-Channel Tube 40m Ω @ 33A, 10V ±30V 3700pF @ 25V 105nC @ 10V 200V TO-247-3
IXFH66N20Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3700pF @ 25V.This device conducts a continuous drain current (ID) of 66A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 264A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH66N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 264A.
a 200V drain to source voltage (Vdss)
IXFH66N20Q Applications
There are a lot of IXYS
IXFH66N20Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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