IXFH60N65X2
- Mfr.Part #
- IXFH60N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 60A TO247
- Stock
- 23,025
- In Stock :
- 23,025
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 30A, 10V
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-247 (IXTH)
- Package / Case :
- TO-247-3
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±30V
- Minimum Operating Temperature :
- -55 °C
- Maximum Operating Temperature :
- +150 °C
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Pin Count :
- 3
- Subcategory :
- MOSFETs
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Width :
- 5.21mm
- RoHS :
- Compliant
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 6180pF @ 25V
- Continuous Drain Current (ID) :
- 60A
- Input Capacitance :
- 6.18 nF
- Power Dissipation (Max) :
- 780W (Tc)
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFH60
- Series :
- HiPerFET™
- Factory Lead Time :
- 19 Weeks
- Published :
- 2015
- FET Feature :
- --
- MSL :
- MSL 1 - Unlimited
- Continuous Drain Current Id :
- 60A
- Number of Elements per Chip :
- 1
- Rds On Max :
- 52 mΩ
- Rise Time :
- 40 ns
- Drain to Source Voltage (Vdss) :
- 650V
- Packaging :
- Tube
- Channel Type :
- N
- Min Operating Temperature :
- -55 °C
- Max Operating Temperature :
- 150 °C
- Power Dissipation :
- 780W
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 780W Tc
- Height :
- 21.34mm
- Package :
- Tube
- Drain to Source Resistance :
- 52 mΩ
- Max Power Dissipation :
- 780 W
- Qualification :
- -
- Length :
- 16.13mm
- Product Status :
- Active
- Manufacturer :
- IXYS
- Package Type :
- TO-247
- Operating Temperature :
- -55°C~150°C TJ
- Channel Mode :
- Enhancement
- Datasheets
- IXFH60N65X2
IXFH60N65X2 Documents

N-Channel Tube 52m Ω @ 30A, 10V ±30V 6180pF @ 25V 107nC @ 10V 650V TO-247-3
IXFH60N65X2 Overview
A device's maximal input capacitance is 6180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 52 mΩ.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH60N65X2 Features
a continuous drain current (ID) of 60A
single MOSFETs transistor is 52 mΩ
a 650V drain to source voltage (Vdss)
IXFH60N65X2 Applications
There are a lot of IXYS
IXFH60N65X2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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