IXFH60N25Q
- Mfr.Part #
- IXFH60N25Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 60A TO247AD
- Stock
- 5,427
- In Stock :
- 5,427
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Power Dissipation :
- 360W
- Manufacturer :
- IXYS Corporation
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 240A
- Terminal Position :
- Single
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 250V
- Fall Time (Typ) :
- 25 ns
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Product Status :
- Obsolete
- Turn-Off Delay Time :
- 80 ns
- Drain-source On Resistance-Max :
- 0.047Ohm
- DS Breakdown Voltage-Min :
- 250 V
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-247AD (IXFH)
- Series :
- HiPerFET™
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 500mA, 10V
- Base Product Number :
- IXFH60
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2000
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 360W (Tc)
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 60 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Rise Time :
- 60ns
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 360W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- JEDEC-95 Code :
- TO-247
- Power Dissipation-Max (Abs) :
- 360 W
- Continuous Drain Current (ID) :
- 60A
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Datasheets
- IXFH60N25Q

N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V 250V TO-247-3
IXFH60N25Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 60 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 240A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH60N25Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)
IXFH60N25Q Applications
There are a lot of IXYS
IXFH60N25Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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