IXFH60N25Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

25 ns

FET Feature :

--

Power Dissipation-Max (Abs) :

360 W

Drain Current-Max (Abs) (ID) :

60 A

Mount :

Through Hole

Number of Pins :

3

Power Dissipation-Max :

360W Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 4mA

Element Configuration :

Single

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

47m Ω @ 500mA, 10V

Power Dissipation (Max) :

360W (Tc)

Pin Count :

3

JEDEC-95 Code :

TO-247

Series :

HiPerFET™

Terminal Position :

Single

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2000

Base Product Number :

IXFH60

Continuous Drain Current (ID) :

60A

DS Breakdown Voltage-Min :

250 V

Avalanche Energy Rating (Eas) :

1500 mJ

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Manufacturer :

IXYS Corporation

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Compliant

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

60ns

Turn-Off Delay Time :

80 ns

Drain to Source Voltage (Vdss) :

250V

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.047Ohm

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Drain to Source Breakdown Voltage :

250V

Pulsed Drain Current-Max (IDM) :

240A

Product Status :

Obsolete

ECCN Code :

EAR99

Case Connection :

DRAIN

Supplier Device Package :

TO-247AD (IXFH)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Number of Elements :

1

Power Dissipation :

360W

Configuration :

SINGLE WITH BUILT-IN DIODE