IXFH60N25Q

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Mfr.Part #
IXFH60N25Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 60A TO247AD
Stock
5,427
In Stock :
5,427

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Element Configuration :
Single
Power Dissipation :
360W
Manufacturer :
IXYS Corporation
Number of Terminals :
3
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
240A
Terminal Position :
Single
FET Feature :
--
Terminal Form :
THROUGH-HOLE
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
250V
Fall Time (Typ) :
25 ns
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Product Status :
Obsolete
Turn-Off Delay Time :
80 ns
Drain-source On Resistance-Max :
0.047Ohm
DS Breakdown Voltage-Min :
250 V
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Package :
Tube
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-247AD (IXFH)
Series :
HiPerFET™
Pin Count :
3
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
250V
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Rds On (Max) @ Id, Vgs :
47m Ω @ 500mA, 10V
Base Product Number :
IXFH60
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2000
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
360W (Tc)
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
60 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 4mA
Rise Time :
60ns
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1500 mJ
Transistor Element Material :
SILICON
Power Dissipation-Max :
360W Tc
Current - Continuous Drain (Id) @ 25°C :
60A Tc
JEDEC-95 Code :
TO-247
Power Dissipation-Max (Abs) :
360 W
Continuous Drain Current (ID) :
60A
Vgs (Max) :
±20V
Lead Free :
Lead Free
FET Type :
N-Channel
Datasheets
IXFH60N25Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH60N25Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFH60N25Q pinout, IXFH60N25Q datasheet PDF, IXFH60N25Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH60N25Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH60N25Q


N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V 250V TO-247-3

IXFH60N25Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 60 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 240A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH60N25Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)


IXFH60N25Q Applications


There are a lot of IXYS
IXFH60N25Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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