IXFH60N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Drain-source On Resistance-Max :

0.033 Ω

Length :

16.26 mm

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

Surface Mount :

No

Reach Compliance Code :

Compliant

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Product Type :

MOSFET

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

2500 mJ

Pin Count :

3

Power Dissipation :

300W

Published :

2002

Supplier Device Package :

TO-247AD (IXFH)

Product Category :

MOSFET

Vgs (Max) :

±20V

Height :

21.46 mm

Width :

5.3 mm

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Element Configuration :

Single

FET Feature :

--

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Pbfree Code :

yes

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

RoHS :

Details

Number of Terminations :

3

Series :

HiPerFET™

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

33m Ω @ 30A, 10V

Configuration :

Single

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Base Product Number :

IXFH60

Manufacturer :

IXYS

ECCN Code :

EAR99

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

200 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Maximum Operating Temperature :

+ 150 C

Drain to Source Breakdown Voltage :

200V

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Number of Elements :

1

Fall Time (Typ) :

26 ns

Vgs(th) (Max) @ Id :

4V @ 4mA

Drain Current-Max (Abs) (ID) :

60 A

Power Dissipation (Max) :

300W (Tc)

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

60A Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Turn-Off Delay Time :

85 ns

Rise Time :

63ns

Terminal Position :

Single

Continuous Drain Current (ID) :

60A

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

300 W

Pulsed Drain Current-Max (IDM) :

240A