IXFH60N20

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Mfr.Part #
IXFH60N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 60A TO247AD
Stock
35,973
In Stock :
35,973

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
85 ns
Product Status :
Active
Rds On (Max) @ Id, Vgs :
33m Ω @ 30A, 10V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.033 Ω
Drain Current-Max (Abs) (ID) :
60 A
Drain to Source Voltage (Vdss) :
200V
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-247AD (IXFH)
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Surface Mount :
No
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
300W
Pin Count :
3
Pbfree Code :
yes
Published :
2002
ECCN Code :
EAR99
Height :
21.46 mm
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Maximum Operating Temperature :
+ 150 C
Element Configuration :
Single
Tradename :
HyperFET
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
300 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXFH60
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Width :
5.3 mm
Avalanche Energy Rating (Eas) :
2500 mJ
Product Type :
MOSFET
FET Type :
N-Channel
Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
240A
Power Dissipation (Max) :
300W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Number of Elements :
1
Transistor Element Material :
SILICON
Series :
HiPerFET™
Rise Time :
63ns
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
20V
Length :
16.26 mm
Brand :
IXYS
Package :
Tube
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Mounting Style :
Through Hole
Terminal Position :
Single
RoHS :
Details
Number of Terminations :
3
Continuous Drain Current (ID) :
60A
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Drain to Source Breakdown Voltage :
200V
Power Dissipation-Max :
300W Tc
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Number of Pins :
3
Fall Time (Typ) :
26 ns
JEDEC-95 Code :
TO-247
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
200 V
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Datasheets
IXFH60N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH60N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, IXFH60N20 pinout, IXFH60N20 datasheet PDF, IXFH60N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH60N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH60N20


N-Channel Tube 33m Ω @ 30A, 10V ±20V 5200pF @ 25V 155nC @ 10V 200V TO-247-3

IXFH60N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 5200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 60 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 85 ns.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH60N20 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 240A.
a 200V drain to source voltage (Vdss)


IXFH60N20 Applications


There are a lot of IXYS
IXFH60N20 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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