IXFH58N20Q

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Mfr.Part #
IXFH58N20Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 58A TO247AD
Stock
20,743
In Stock :
20,743

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
8 Weeks
Power Dissipation (Max) :
300W (Tc)
Drain to Source Voltage (Vdss) :
200V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current Rating :
58A
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation-Max (Abs) :
300 W
Mounting Type :
Through Hole
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
200V
Transistor Element Material :
SILICON
JESD-609 Code :
e1
ECCN Code :
EAR99
FET Type :
N-Channel
Continuous Drain Current (ID) :
58A
Drain to Source Breakdown Voltage :
200V
Number of Elements :
1
Package Shape :
RECTANGULAR
Fall Time (Typ) :
13 ns
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Power Dissipation :
300W
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Lead Free :
Lead Free
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.04 Ω
Moisture Sensitivity Level (MSL) :
Not Applicable
Pin Count :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JEDEC-95 Code :
TO-247
Resistance :
40mOhm
Series :
HiPerFET™
Pulsed Drain Current-Max (IDM) :
232 A
Packaging :
Tube
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Published :
1999
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
40m Ω @ 29A, 10V
Surface Mount :
No
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Turn-Off Delay Time :
40 ns
Power Dissipation-Max :
300W Tc
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
58 A
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
200 V
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Pbfree Code :
yes
Number of Terminations :
3
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminals :
3
Base Product Number :
IXFH58
Avalanche Energy Rating (Eas) :
1000 mJ
Rise Time :
40ns
Datasheets
IXFH58N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH58N20Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, IXFH58N20Q pinout, IXFH58N20Q datasheet PDF, IXFH58N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH58N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH58N20Q


N-Channel Tube 40m Ω @ 29A, 10V ±20V 3600pF @ 25V 140nC @ 10V 200V TO-247-3

IXFH58N20Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 58 A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 232 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH58N20Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 232 A.
a 200V drain to source voltage (Vdss)


IXFH58N20Q Applications


There are a lot of IXYS
IXFH58N20Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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