IXFH58N20Q
- Mfr.Part #
- IXFH58N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 58A TO247AD
- Stock
- 20,743
- In Stock :
- 20,743
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Power Dissipation (Max) :
- 300W (Tc)
- Drain to Source Voltage (Vdss) :
- 200V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 58A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Power Dissipation-Max (Abs) :
- 300 W
- Mounting Type :
- Through Hole
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 200V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 58A
- Drain to Source Breakdown Voltage :
- 200V
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 13 ns
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Power Dissipation :
- 300W
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.04 Ω
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JEDEC-95 Code :
- TO-247
- Resistance :
- 40mOhm
- Series :
- HiPerFET™
- Pulsed Drain Current-Max (IDM) :
- 232 A
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Published :
- 1999
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 29A, 10V
- Surface Mount :
- No
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Obsolete
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 300W Tc
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 58 A
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 200 V
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Terminals :
- 3
- Base Product Number :
- IXFH58
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rise Time :
- 40ns
- Datasheets
- IXFH58N20Q

N-Channel Tube 40m Ω @ 29A, 10V ±20V 3600pF @ 25V 140nC @ 10V 200V TO-247-3
IXFH58N20Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 58 A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 232 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH58N20Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 232 A.
a 200V drain to source voltage (Vdss)
IXFH58N20Q Applications
There are a lot of IXYS
IXFH58N20Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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