IXFH52N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

960W

Drain to Source Breakdown Voltage :

500V

JEDEC-95 Code :

TO-247

Base Product Number :

IXFH52

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Tradename :

HiPerFET

Power Dissipation-Max (Abs) :

960 W

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

Vgs (Max) :

±30V

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

52A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Power Dissipation-Max :

960W Tc

Drain-source On Resistance-Max :

0.12Ohm

Product Status :

Active

Drain to Source Voltage (Vdss) :

500V

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Drain to Source Resistance :

120 mΩ

Drain Current-Max (Abs) (ID) :

52 A

Max Power Dissipation :

960 W

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1 Channel

Mount :

Through Hole

Mounting Type :

Through Hole

Input Capacitance :

6.8 nF

Package Shape :

RECTANGULAR

FET Feature :

--

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Reach Compliance Code :

Compliant

Number of Elements :

1

Surface Mount :

No

Configuration :

Single

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500 V

Max Operating Temperature :

150 °C

Transistor Polarity :

N-Channel

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Element Configuration :

Single

Mounting Style :

Through Hole

FET Type :

N-Channel

Pin Count :

3

Product Type :

MOSFET

RoHS :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Series :

HiPerFET™, PolarHV™

Transistor Type :

1 N-Channel

Package / Case :

TO-247-3

Published :

2011

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Type :

PolarP2 HiPerFET

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

150A

Supplier Device Package :

TO-247AD (IXFH)

Product Category :

MOSFET

Power Dissipation (Max) :

960W (Tc)

Avalanche Energy Rating (Eas) :

1500 mJ

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Rds On Max :

120 mΩ

Factory Lead Time :

30 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)