IXFH52N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500V

Drain to Source Resistance :

120 mΩ

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

150A

Avalanche Energy Rating (Eas) :

1500 mJ

RoHS :

Compliant

Max Operating Temperature :

150 °C

Product Category :

MOSFET

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Power Dissipation (Max) :

960W (Tc)

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Terminal Position :

Single

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Tradename :

HiPerFET

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

500 V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

52A

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 4mA

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Power Dissipation :

960W

Polarity/Channel Type :

N-Channel

Package :

Tube

Factory Lead Time :

30 Weeks

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

Max Power Dissipation :

960 W

JEDEC-95 Code :

TO-247

Number of Elements :

1

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Product Status :

Active

Published :

2011

Min Operating Temperature :

-55 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

52 A

Input Capacitance :

6.8 nF

Series :

HiPerFET™, PolarHV™

Packaging :

Tube

Power Dissipation-Max :

960W Tc

Surface Mount :

No

Number of Terminals :

3

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Rds On Max :

120 mΩ

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±30V

Base Product Number :

IXFH52

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.12Ohm

Brand :

IXYS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Type :

N-Channel

Type :

PolarP2 HiPerFET

Element Configuration :

Single

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

960 W

Drive Voltage (Max Rds On,Min Rds On) :

10V