IXFH52N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Max Power Dissipation :

960 W

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

500 V

Packaging :

Tube

Power Dissipation-Max :

960W Tc

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Supplier Device Package :

TO-247AD (IXFH)

Drain Current-Max (Abs) (ID) :

52 A

Additional Feature :

AVALANCHE RATED

Input Capacitance :

6.8 nF

Brand :

IXYS

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Max Operating Temperature :

150 °C

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247

FET Type :

N-Channel

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

RoHS :

Compliant

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™, PolarHV™

Element Configuration :

Single

Power Dissipation (Max) :

960W (Tc)

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Vgs (Max) :

±30V

Manufacturer :

IXYS

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

120 mΩ

Type :

PolarP2 HiPerFET

Number of Elements :

1

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

150A

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Min Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

500V

Base Product Number :

IXFH52

Power Dissipation-Max (Abs) :

960 W

Published :

2011

Avalanche Energy Rating (Eas) :

1500 mJ

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Power Dissipation :

960W

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

52A

Terminal Position :

Single

Drain to Source Resistance :

120 mΩ

Factory Lead Time :

30 Weeks

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.12Ohm

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE