IXFH52N50P2
- Mfr.Part #
- IXFH52N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 52A TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Configuration :
- Single
- FET Feature :
- --
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- RoHS :
- Compliant
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 113nC @ 10V
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 150A
- Input Capacitance :
- 6.8 nF
- Max Operating Temperature :
- 150 °C
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Resistance :
- 120 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Power Dissipation :
- 960W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 960 W
- Reach Compliance Code :
- Compliant
- Type :
- PolarP2 HiPerFET
- Power Dissipation (Max) :
- 960W (Tc)
- FET Type :
- N-Channel
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 52 A
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 500V
- Continuous Drain Current (ID) :
- 52A
- Factory Lead Time :
- 30 Weeks
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247AD (IXFH)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, PolarHV™
- Rds On Max :
- 120 mΩ
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JEDEC-95 Code :
- TO-247
- Power Dissipation-Max (Abs) :
- 960 W
- Transistor Type :
- 1 N-Channel
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 960W Tc
- Number of Terminations :
- 3
- Tradename :
- HiPerFET
- Base Product Number :
- IXFH52
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.12Ohm
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 26A, 10V
- Product Status :
- Active
- Min Operating Temperature :
- -55 °C
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXFH52N50P2
IXFH52N50P2 Documents

N-Channel Tube 120m Ω @ 26A, 10V ±30V 6800pF @ 25V 113nC @ 10V 500V TO-247-3
IXFH52N50P2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 52A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 52 A.Peak drain current is 150A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 120 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH52N50P2 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 150A.
single MOSFETs transistor is 120 mΩ
a 500V drain to source voltage (Vdss)
IXFH52N50P2 Applications
There are a lot of IXYS
IXFH52N50P2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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