IXFH52N30P

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Mfr.Part #
IXFH52N30P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 52A TO247AD
Stock
20,317
In Stock :
20,317

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
300V
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Drain-source On Resistance-Max :
0.066Ohm
Turn-Off Delay Time :
60 ns
Input Capacitance (Ciss) (Max) @ Vds :
3490pF @ 25V
Pin Count :
3
Continuous Drain Current (ID) :
52A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JEDEC-95 Code :
TO-247
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
1000 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-247-3
Continuous Drain Current Id :
52A
Qualification :
-
Packaging :
Tube
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Element Configuration :
Single
Length :
16.26mm
Pulsed Drain Current-Max (IDM) :
150 A
Transistor Application :
SWITCHING
Rise Time :
22ns
Drain Current-Max (Abs) (ID) :
52 A
Drain to Source Breakdown Voltage :
300V
ECCN Code :
EAR99
Mounting Style :
Through Hole
Case Connection :
DRAIN
JESD-609 Code :
e1
Vgs(th) (Max) @ Id :
5V @ 4mA
Channel Type :
N Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Package :
Tube
Factory Lead Time :
30 Weeks
Power Dissipation-Max :
400W Tc
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
Tradename :
HiPerFET
Width :
5.3mm
Surface Mount :
No
Base Product Number :
IXFH52
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Number of Terminations :
3
Series :
PolarHT™ HiPerFET™
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
300 V
Qualification Status :
Not Qualified
Fall Time (Typ) :
20 ns
Supplier Device Package :
TO-247AD (IXFH)
Lead Free :
Lead Free
Power Dissipation :
400W
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
400 W
Transistor Type :
1 N-Channel
Published :
2006
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Type :
Polar Power MOSFETs HiPerFET
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 150 C
RoHS :
Details
Power Dissipation (Max) :
400W (Tc)
Mount :
Through Hole
FET Feature :
--
Product Type :
MOSFET
Height :
21.46mm
Configuration :
Single
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Turn On Delay Time :
24 ns
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Rds On (Max) @ Id, Vgs :
66m Ω @ 500mA, 10V
Datasheets
IXFH52N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH52N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Type:Polar Power MOSFETs HiPerFET, IXFH52N30P pinout, IXFH52N30P datasheet PDF, IXFH52N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH52N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH52N30P


N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300V TO-247-3

IXFH52N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3490pF @ 25V.This device conducts a continuous drain current (ID) of 52A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 52 A.When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 150 A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 24 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH52N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150 A.
a 300V drain to source voltage (Vdss)


IXFH52N30P Applications


There are a lot of IXYS
IXFH52N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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