IXFH52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Pbfree Code :

yes

Number of Terminals :

3

Fall Time (Typ) :

20 ns

Transistor Polarity :

N-Channel

Length :

16.26mm

Surface Mount :

No

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

FET Feature :

--

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

400W

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

Number of Elements :

1

Qualification :

-

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

400W (Tc)

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Continuous Drain Current Id :

52A

Number of Terminations :

3

Height :

21.46mm

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Pulsed Drain Current-Max (IDM) :

150 A

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Type :

Polar Power MOSFETs HiPerFET

Rise Time :

22ns

Power Dissipation-Max (Abs) :

400 W

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Series :

PolarHT™ HiPerFET™

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.066Ohm

Drain to Source Breakdown Voltage :

300V

Factory Lead Time :

30 Weeks

Drain to Source Voltage (Vdss) :

300V

Turn On Delay Time :

24 ns

Packaging :

Tube

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Channel Type :

N Channel

Product Category :

MOSFET

Turn-Off Delay Time :

60 ns

Mounting Style :

Through Hole

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Lead Free :

Lead Free

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Width :

5.3mm

Package :

Tube

Avalanche Energy Rating (Eas) :

1000 mJ

Tradename :

HiPerFET

Element Configuration :

Single

Continuous Drain Current (ID) :

52A

Rds On (Max) @ Id, Vgs :

66m Ω @ 500mA, 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Base Product Number :

IXFH52

Drain Current-Max (Abs) (ID) :

52 A

FET Type :

N-Channel

DS Breakdown Voltage-Min :

300 V

JEDEC-95 Code :

TO-247

Package Shape :

RECTANGULAR

Terminal Position :

Single

Configuration :

Single

Supplier Device Package :

TO-247AD (IXFH)

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

400W Tc

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant