IXFH52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Pbfree Code :

yes

Qualification :

-

Length :

16.26mm

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Drain to Source Voltage (Vdss) :

300V

DS Breakdown Voltage-Min :

300 V

Number of Terminals :

3

Surface Mount :

No

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Width :

5.3mm

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

400W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Package Shape :

RECTANGULAR

Package :

Tube

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Turn-Off Delay Time :

60 ns

Mount :

Through Hole

Number of Pins :

3

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

66m Ω @ 500mA, 10V

Drain-source On Resistance-Max :

0.066Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Power Dissipation-Max (Abs) :

400 W

JESD-609 Code :

e1

Type :

Polar Power MOSFETs HiPerFET

Vgs(th) (Max) @ Id :

5V @ 4mA

Series :

PolarHT™ HiPerFET™

JEDEC-95 Code :

TO-247

Number of Channels :

1 Channel

Height :

21.46mm

Gate to Source Voltage (Vgs) :

20V

Product Status :

Active

Brand :

IXYS

Mounting Type :

Through Hole

FET Type :

N-Channel

Rise Time :

22ns

Power Dissipation :

400W

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn On Delay Time :

24 ns

Avalanche Energy Rating (Eas) :

1000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Package / Case :

TO-247-3

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

30 Weeks

Drain to Source Breakdown Voltage :

300V

Power Dissipation (Max) :

400W (Tc)

Drain Current-Max (Abs) (ID) :

52 A

Pulsed Drain Current-Max (IDM) :

150 A

Continuous Drain Current (ID) :

52A

Supplier Device Package :

TO-247AD (IXFH)

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Continuous Drain Current Id :

52A

Element Configuration :

Single

Pin Count :

3

Channel Type :

N Channel

Manufacturer :

IXYS

Mounting Style :

Through Hole

Product Type :

MOSFET

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2006

Case Connection :

DRAIN

Base Product Number :

IXFH52