IXFH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Mount :

Through Hole

Case Connection :

DRAIN

Height :

21.46 mm

Configuration :

Single

Tradename :

HyperFET

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Power Dissipation Ambient-Max :

300 W

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Base Product Number :

IXFH50

Power Dissipation :

300W

Dual Supply Voltage :

200V

Pulsed Drain Current-Max (IDM) :

200A

Supplier Device Package :

TO-247AD (IXFH)

Minimum Operating Temperature :

- 55 C

Threshold Voltage :

4V

Drain to Source Voltage (Vdss) :

200V

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

16 ns

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

50A

Number of Terminations :

3

Radiation Hardening :

No

Current Rating :

50A

Packaging :

Tube

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

15ns

RoHS :

Details

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 4mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

FET Type :

N-Channel

ECCN Code :

EAR99

Product Category :

MOSFET

Power Dissipation (Max) :

300W (Tc)

Product Type :

MOSFET

DS Breakdown Voltage-Min :

200 V

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.045 Ω

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Published :

2000

Product Status :

Not For New Designs

Power Dissipation-Max (Abs) :

300 W

Number of Terminals :

3

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

200V

Package :

Tube

FET Feature :

--

Moisture Sensitivity Level (MSL) :

Not Applicable

Recovery Time :

200 ns

Length :

16.26 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.3 mm

Series :

HiPerFET™

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Resistance :

45mOhm

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Operating Temperature :

-55°C~150°C TJ

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

50 A

Number of Pins :

3

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Channels :

1 Channel

Turn-Off Delay Time :

72 ns