IXFH50N20
- Mfr.Part #
- IXFH50N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A TO247AD
- Stock
- 60,199
- In Stock :
- 60,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Fall Time (Typ) :
- 16 ns
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 200V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 72 ns
- ECCN Code :
- EAR99
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 300W Tc
- Resistance :
- 45mOhm
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Length :
- 16.26 mm
- FET Feature :
- --
- Package / Case :
- TO-247-3
- Width :
- 5.3 mm
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 300 W
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 200A
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 200 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Radiation Hardening :
- No
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Recovery Time :
- 200 ns
- Package Shape :
- RECTANGULAR
- Height :
- 21.46 mm
- Drain-source On Resistance-Max :
- 0.045 Ω
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Dual Supply Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 25A, 10V
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- RoHS :
- Details
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-247AD (IXFH)
- Voltage - Rated DC :
- 200V
- Continuous Drain Current (ID) :
- 50A
- Tradename :
- HyperFET
- Current Rating :
- 50A
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 50 A
- Series :
- HiPerFET™
- Power Dissipation :
- 300W
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation Ambient-Max :
- 300 W
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Published :
- 2000
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Factory Lead Time :
- 8 Weeks
- Package :
- Tube
- Product Status :
- Not For New Designs
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 4 V
- Base Product Number :
- IXFH50
- Datasheets
- IXFH50N20

N-Channel Tube 45m Ω @ 25A, 10V ±20V 4400pF @ 25V 220nC @ 10V 200V TO-247-3
IXFH50N20 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 50 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 72 ns.Peak drain current is 200A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH50N20 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IXFH50N20 Applications
There are a lot of IXYS
IXFH50N20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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