IXFH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 4mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

1 N-Channel

Terminal Position :

Single

Power Dissipation Ambient-Max :

300 W

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Radiation Hardening :

No

Nominal Vgs :

4 V

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFH50

Channel Mode :

Enhancement

Product Category :

MOSFET

Mounting Style :

Through Hole

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

45mOhm

Mounting Type :

Through Hole

Product Status :

Not For New Designs

Power Dissipation (Max) :

300W (Tc)

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

RoHS :

Details

Number of Elements :

1

Package :

Tube

Rise Time :

15ns

Terminal Form :

THROUGH-HOLE

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.045 Ω

Supplier Device Package :

TO-247AD (IXFH)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

300W

Length :

16.26 mm

Fall Time (Typ) :

16 ns

Series :

HiPerFET™

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Brand :

IXYS

Current Rating :

50A

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Number of Terminations :

3

JEDEC-95 Code :

TO-247

Tradename :

HyperFET

Moisture Sensitivity Level (MSL) :

Not Applicable

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs (Max) :

±20V

Recovery Time :

200 ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

50 A

Width :

5.3 mm

Mount :

Through Hole

Dual Supply Voltage :

200V

Surface Mount :

No

Voltage - Rated DC :

200V

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Packaging :

Tube

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

50A

Height :

21.46 mm

Power Dissipation-Max :

300W Tc

Published :

2000

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

300 W

Threshold Voltage :

4V

Turn-Off Delay Time :

72 ns

Pin Count :

3

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Element Configuration :

Single

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

200V