IXFH50N20

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Mfr.Part #
IXFH50N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO247AD
Stock
60,199
In Stock :
60,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
FET Type :
N-Channel
Height :
21.46 mm
REACH SVHC :
No SVHC
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Channel Mode :
Enhancement
JESD-609 Code :
e1
Package :
Tube
Drain to Source Breakdown Voltage :
200V
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Published :
2000
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
45m Ω @ 25A, 10V
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Voltage - Rated DC :
200V
Transistor Element Material :
SILICON
Turn-Off Delay Time :
72 ns
DS Breakdown Voltage-Min :
200 V
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
50 A
Manufacturer :
IXYS
Power Dissipation Ambient-Max :
300 W
Product Category :
MOSFET
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
Not Applicable
Operating Temperature :
-55°C~150°C TJ
Dual Supply Voltage :
200V
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Series :
HiPerFET™
Power Dissipation-Max (Abs) :
300 W
Current Rating :
50A
JEDEC-95 Code :
TO-247
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Resistance :
45mOhm
Fall Time (Typ) :
16 ns
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Power Dissipation (Max) :
300W (Tc)
Polarity/Channel Type :
N-Channel
Threshold Voltage :
4V
Number of Channels :
1 Channel
Product Type :
MOSFET
Rise Time :
15ns
Length :
16.26 mm
Number of Elements :
1
RoHS :
Details
Drain-source On Resistance-Max :
0.045 Ω
Power Dissipation-Max :
300W Tc
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Surface Mount :
No
Power Dissipation :
300W
Product Status :
Not For New Designs
Pulsed Drain Current-Max (IDM) :
200A
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Brand :
IXYS
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
200V
Supplier Device Package :
TO-247AD (IXFH)
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
50A
Case Connection :
DRAIN
Nominal Vgs :
4 V
Recovery Time :
200 ns
Base Product Number :
IXFH50
Terminal Position :
Single
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Width :
5.3 mm
Reach Compliance Code :
Compliant
Radiation Hardening :
No
Tradename :
HyperFET
Lead Free :
Lead Free
Datasheets
IXFH50N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH50N20 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFH50N20 pinout, IXFH50N20 datasheet PDF, IXFH50N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH50N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH50N20


N-Channel Tube 45m Ω @ 25A, 10V ±20V 4400pF @ 25V 220nC @ 10V 200V TO-247-3

IXFH50N20 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 50 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 72 ns.Peak drain current is 200A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH50N20 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXFH50N20 Applications


There are a lot of IXYS
IXFH50N20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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