IXFH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Resistance :

45mOhm

Supplier Device Package :

TO-247AD (IXFH)

Number of Channels :

1 Channel

Number of Pins :

3

Packaging :

Tube

Current Rating :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

FET Feature :

--

Tradename :

HyperFET

Recovery Time :

200 ns

Base Product Number :

IXFH50

Dual Supply Voltage :

200V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

4V

RoHS :

Details

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Power Dissipation Ambient-Max :

300 W

Power Dissipation :

300W

Product Status :

Not For New Designs

Moisture Sensitivity Level (MSL) :

Not Applicable

REACH SVHC :

No SVHC

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Nominal Vgs :

4 V

Power Dissipation-Max (Abs) :

300 W

FET Type :

N-Channel

Package :

Tube

Published :

2000

Drain Current-Max (Abs) (ID) :

50 A

Package Shape :

RECTANGULAR

Voltage - Rated DC :

200V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 4mA

Number of Terminals :

3

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

72 ns

Package / Case :

TO-247-3

Fall Time (Typ) :

16 ns

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200V

Configuration :

Single

Product Type :

MOSFET

Drain-source On Resistance-Max :

0.045 Ω

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

200 V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Mounting Style :

Through Hole

JESD-30 Code :

R-PSFM-T3

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Channel Mode :

Enhancement

Power Dissipation (Max) :

300W (Tc)

Pbfree Code :

yes

Lead Free :

Lead Free

Height :

21.46 mm

ECCN Code :

EAR99

Length :

16.26 mm

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

MOSFET

JEDEC-95 Code :

TO-247

Gate to Source Voltage (Vgs) :

20V

Width :

5.3 mm

Terminal Position :

Single

Continuous Drain Current (ID) :

50A

Reach Compliance Code :

Compliant

Rise Time :

15ns

Qualification Status :

Not Qualified

Factory Lead Time :

8 Weeks

Pulsed Drain Current-Max (IDM) :

200A

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

200V

Mount :

Through Hole

Mounting Type :

Through Hole