IXFH4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

15ns

Number of Pins :

3

Max Operating Temperature :

150 °C

Length :

16.26 mm

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

1000 V

Avalanche Energy Rating (Eas) :

700 mJ

Surface Mount :

No

Continuous Drain Current (ID) :

4A

Drain Current-Max (Abs) (ID) :

4A

Channel Mode :

Enhancement

Power Dissipation (Max) :

150W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Pulsed Drain Current-Max (IDM) :

16A

Series :

HiPerFET™

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain-source On Resistance-Max :

3Ohm

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

Width :

5.3 mm

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

150 W

Base Product Number :

IXFH4

Height :

21.46 mm

Product Status :

Active

Product Category :

MOSFET

Pbfree Code :

yes

Supplier Device Package :

TO-247AD (IXFH)

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Transistor Type :

1 N-Channel

RoHS :

Compliant

Turn-Off Delay Time :

32 ns

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-247AD

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Rds On Max :

3 Ω

Mounting Type :

Through Hole

Lead Free :

Lead Free

Package :

Tube

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Power Dissipation-Max :

150W Tc

Fall Time (Typ) :

18 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

RoHS Status :

ROHS3 Compliant

Input Capacitance :

1.05 nF

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

150W

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Max Power Dissipation :

150 W

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Terminal Position :

Single

Brand :

IXYS

Drain to Source Resistance :

3 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

1kV

Published :

2000

FET Feature :

--

Manufacturer :

IXYS

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Number of Terminations :

3