IXFH44N50Q3
- Mfr.Part #
- IXFH44N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO247AD
- Stock
- 89
- In Stock :
- 89
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 250ns
- Power Dissipation :
- 830W
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Published :
- 2011
- Number of Elements per Chip :
- 1
- Width :
- 5.3mm
- Pin Count :
- 3
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Channel Type :
- N
- Power Dissipation-Max :
- 830W Tc
- Package Type :
- TO-247
- Drain to Source Voltage (Vdss) :
- 500V
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 130 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 16.26mm
- Number of Elements :
- 1
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Drain-source On Resistance-Max :
- 0.14Ohm
- JEDEC-95 Code :
- TO-247
- Factory Lead Time :
- 20 Weeks
- Drain Current-Max (Abs) (ID) :
- 44 A
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 37 ns
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- -55 °C
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFH44
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 44A
- Maximum Operating Temperature :
- +150 °C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 500 V
- RoHS :
- Details
- Turn On Delay Time :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 830W (Tc)
- Configuration :
- Single
- Supplier Device Package :
- TO-247AD (IXFH)
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 0.83 W
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HiPerFET
- Height :
- 16.26mm
- Datasheets
- IXFH44N50Q3

N-Channel Tube 140m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-247-3
IXFH44N50Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 37 ns.Peak drain current is 130 A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH44N50Q3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130 A.
a 500V drain to source voltage (Vdss)
IXFH44N50Q3 Applications
There are a lot of IXYS
IXFH44N50Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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