IXFH44N50Q3

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Mfr.Part #
IXFH44N50Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO247AD
Stock
89
In Stock :
89

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
250ns
Power Dissipation :
830W
Element Configuration :
Single
Case Connection :
DRAIN
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Product Type :
MOSFET
Mount :
Through Hole
Published :
2011
Number of Elements per Chip :
1
Width :
5.3mm
Pin Count :
3
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
FET Type :
N-Channel
Channel Type :
N
Power Dissipation-Max :
830W Tc
Package Type :
TO-247
Drain to Source Voltage (Vdss) :
500V
Brand :
IXYS
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
130 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
16.26mm
Number of Elements :
1
Series :
HiPerFET™
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Drain-source On Resistance-Max :
0.14Ohm
JEDEC-95 Code :
TO-247
Factory Lead Time :
20 Weeks
Drain Current-Max (Abs) (ID) :
44 A
Manufacturer :
IXYS
Turn-Off Delay Time :
37 ns
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Package :
Tube
Packaging :
Tube
Drain to Source Breakdown Voltage :
500V
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
-55 °C
Transistor Type :
1 N-Channel
Base Product Number :
IXFH44
Number of Pins :
3
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
44A
Maximum Operating Temperature :
+150 °C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
500 V
RoHS :
Details
Turn On Delay Time :
30 ns
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Power Dissipation (Max) :
830W (Tc)
Configuration :
Single
Supplier Device Package :
TO-247AD (IXFH)
Gate to Source Voltage (Vgs) :
30V
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-247-3
Product Category :
MOSFET
Package Shape :
RECTANGULAR
FET Feature :
--
Power Dissipation-Max (Abs) :
0.83 W
Number of Terminations :
3
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Tradename :
HiPerFET
Height :
16.26mm
Datasheets
IXFH44N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH44N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, IXFH44N50Q3 pinout, IXFH44N50Q3 datasheet PDF, IXFH44N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH44N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH44N50Q3


N-Channel Tube 140m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-247-3

IXFH44N50Q3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 37 ns.Peak drain current is 130 A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH44N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130 A.
a 500V drain to source voltage (Vdss)


IXFH44N50Q3 Applications


There are a lot of IXYS
IXFH44N50Q3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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