IXFH44N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247

Mounting Type :

Through Hole

Factory Lead Time :

20 Weeks

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Height :

16.26mm

Width :

5.3mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Package Type :

TO-247

Pulsed Drain Current-Max (IDM) :

130 A

Mounting Style :

Through Hole

Case Connection :

DRAIN

Number of Pins :

3

Minimum Operating Temperature :

-55 °C

Maximum Operating Temperature :

+150 °C

Pin Count :

3

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Published :

2011

Packaging :

Tube

Brand :

IXYS

Number of Terminations :

3

Turn On Delay Time :

30 ns

Supplier Device Package :

TO-247AD (IXFH)

Tradename :

HiPerFET

Reach Compliance Code :

Unknown

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

500 V

Package :

Tube

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFH44

Continuous Drain Current (ID) :

44A

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

830W Tc

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Turn-Off Delay Time :

37 ns

Product Status :

Active

Number of Channels :

1 Channel

RoHS :

Details

Series :

HiPerFET™

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

44 A

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Power Dissipation (Max) :

830W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Type :

N

FET Type :

N-Channel

Manufacturer :

IXYS

Terminal Position :

Single

Drain to Source Breakdown Voltage :

500V

Number of Elements per Chip :

1

Number of Terminals :

3

Rise Time :

250ns

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

0.83 W

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.14Ohm

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1500 mJ

Vgs (Max) :

±30V

Mount :

Through Hole

Number of Elements :

1

Length :

16.26mm

Rds On (Max) @ Id, Vgs :

140m Ω @ 22A, 10V

Transistor Type :

1 N-Channel

Power Dissipation :

830W