IXFH44N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Published :

2011

Power Dissipation :

830W

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Minimum Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Packaging :

Tube

Length :

16.26mm

Number of Pins :

3

Manufacturer :

IXYS

Surface Mount :

No

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

44 A

Maximum Operating Temperature :

+150 °C

FET Type :

N-Channel

Brand :

IXYS

Drain to Source Voltage (Vdss) :

500V

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

0.83 W

Number of Elements per Chip :

1

Number of Terminations :

3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

250ns

Series :

HiPerFET™

Configuration :

Single

Mounting Type :

Through Hole

Base Product Number :

IXFH44

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

FET Feature :

--

Power Dissipation (Max) :

830W (Tc)

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.14Ohm

Terminal Form :

THROUGH-HOLE

Package Type :

TO-247

Terminal Position :

Single

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Continuous Drain Current (ID) :

44A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Height :

16.26mm

JEDEC-95 Code :

TO-247

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Pin Count :

3

Product Status :

Active

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

130 A

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Factory Lead Time :

20 Weeks

Channel Type :

N

Drain to Source Breakdown Voltage :

500V

RoHS :

Details

Rds On (Max) @ Id, Vgs :

140m Ω @ 22A, 10V

DS Breakdown Voltage-Min :

500 V

Avalanche Energy Rating (Eas) :

1500 mJ

Channel Mode :

Enhancement

Supplier Device Package :

TO-247AD (IXFH)

Turn-Off Delay Time :

37 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

830W Tc

Tradename :

HiPerFET

Number of Elements :

1

Number of Terminals :

3

Turn On Delay Time :

30 ns

Product Category :

MOSFET

Width :

5.3mm