IXFH42N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

185m Ω @ 500mA, 10V

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Vgs (Max) :

±30V

MSL :

-

Height :

21.46mm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

100A

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.185Ohm

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 4mA

Continuous Drain Current (ID) :

42A

Number of Terminations :

3

Lead Free :

Lead Free

Fall Time (Typ) :

17 ns

Mounting Type :

Through Hole

Qualification :

-

ECCN Code :

EAR99

Terminal Position :

Single

Surface Mount :

No

Number of Elements :

1

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Published :

2012

Channel Type :

N Channel

Qualification Status :

Not Qualified

Element Configuration :

Single

Threshold Voltage :

4.5V

Rise Time :

23ns

Power Dissipation (Max) :

830W (Tc)

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Length :

16.26mm

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-247

Continuous Drain Current Id :

42A

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Product Category :

MOSFET

Series :

HiPerFET™, Polar3™

FET Feature :

--

Package / Case :

TO-247-3

Turn-Off Delay Time :

60 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

RoHS :

Details

Mount :

Through Hole

Turn On Delay Time :

32 ns

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Base Product Number :

IXFH42

Power Dissipation-Max (Abs) :

830 W

Drain to Source Breakdown Voltage :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

42 A

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Polarity/Channel Type :

N-Channel

Product Status :

Active

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

600 V

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Number of Pins :

3

Number of Terminals :

3

Width :

5.3mm

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

830W Tc

Power Dissipation :

830W

Brand :

IXYS

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Packaging :

Tube

Mounting Style :

Through Hole

Supplier Device Package :

TO-247AD (IXFH)

Number of Channels :

1 Channel

Tradename :

HiPerFET