IXFH42N50P2

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Mfr.Part #
IXFH42N50P2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 42A TO247AD
Stock
386
In Stock :
386

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarHV™
Base Product Number :
IXFH42
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Type :
PolarP2 HiPerFET
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Drain to Source Resistance :
145 mΩ
Drain Current-Max (Abs) (ID) :
42 A
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
830W
Element Configuration :
Single
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Package :
Tube
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.145Ohm
Qualification Status :
Not Qualified
Min Operating Temperature :
-55 °C
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
126A
Continuous Drain Current (ID) :
42A
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Published :
2011
Surface Mount :
No
Rds On Max :
145 mΩ
Drain to Source Breakdown Voltage :
500V
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150 °C
DS Breakdown Voltage-Min :
500 V
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation-Max :
830W Tc
FET Type :
N-Channel
Input Capacitance :
5.3 nF
Power Dissipation (Max) :
830W (Tc)
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
830 W
Tradename :
HiPerFET
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Number of Terminals :
3
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
1400 mJ
Max Power Dissipation :
830 W
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-247-3
Terminal Position :
Single
Product Status :
Active
Mounting Style :
Through Hole
Vgs (Max) :
±30V
Additional Feature :
AVALANCHE RATED
Pin Count :
3
RoHS :
Compliant
Transistor Application :
SWITCHING
Brand :
IXYS
JESD-609 Code :
e1
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
500V
Factory Lead Time :
30 Weeks
JEDEC-95 Code :
TO-247
Channel Mode :
Enhancement
Datasheets
IXFH42N50P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH42N50P2 from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarP2 HiPerFET, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-247-3, IXFH42N50P2 pinout, IXFH42N50P2 datasheet PDF, IXFH42N50P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH42N50P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH42N50P2


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5300pF @ 25V 92nC @ 10V 500V TO-247-3

IXFH42N50P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 145 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH42N50P2 Features


the avalanche energy rating (Eas) is 1400 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
single MOSFETs transistor is 145 mΩ
a 500V drain to source voltage (Vdss)


IXFH42N50P2 Applications


There are a lot of IXYS
IXFH42N50P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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