IXFH42N50P2
- Mfr.Part #
- IXFH42N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 42A TO247AD
- Stock
- 386
- In Stock :
- 386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHV™
- Base Product Number :
- IXFH42
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Type :
- PolarP2 HiPerFET
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Drain to Source Resistance :
- 145 mΩ
- Drain Current-Max (Abs) (ID) :
- 42 A
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 830W
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.145Ohm
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55 °C
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 126A
- Continuous Drain Current (ID) :
- 42A
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Published :
- 2011
- Surface Mount :
- No
- Rds On Max :
- 145 mΩ
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150 °C
- DS Breakdown Voltage-Min :
- 500 V
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation-Max :
- 830W Tc
- FET Type :
- N-Channel
- Input Capacitance :
- 5.3 nF
- Power Dissipation (Max) :
- 830W (Tc)
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 830 W
- Tradename :
- HiPerFET
- Rds On (Max) @ Id, Vgs :
- 145m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 1400 mJ
- Max Power Dissipation :
- 830 W
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- RoHS :
- Compliant
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 500V
- Factory Lead Time :
- 30 Weeks
- JEDEC-95 Code :
- TO-247
- Channel Mode :
- Enhancement
- Datasheets
- IXFH42N50P2

N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5300pF @ 25V 92nC @ 10V 500V TO-247-3
IXFH42N50P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 145 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH42N50P2 Features
the avalanche energy rating (Eas) is 1400 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
single MOSFETs transistor is 145 mΩ
a 500V drain to source voltage (Vdss)
IXFH42N50P2 Applications
There are a lot of IXYS
IXFH42N50P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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