IXFH42N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

16 ns

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AD

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

300W (Tc)

Transistor Type :

1 N-Channel

Case Connection :

DRAIN

Mounting Style :

Through Hole

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

168A

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

Voltage - Rated DC :

200V

Turn-Off Delay Time :

72 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.06Ohm

Current Rating :

42A

Supplier Device Package :

TO-247AD (IXFH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.3 mm

Packaging :

Tube

Number of Channels :

1 Channel

Power Dissipation :

300W

FET Type :

N-Channel

Number of Elements :

1

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Terminal Position :

Single

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

60m Ω @ 500mA, 10V

Number of Pins :

3

Series :

HiPerFET™

Published :

2000

Tradename :

HyperFET

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Power Dissipation Ambient-Max :

300 W

Length :

16.26 mm

Product Status :

Active

Product Category :

MOSFET

Continuous Drain Current (ID) :

42A

Surface Mount :

No

Pbfree Code :

yes

Brand :

IXYS

Drain to Source Breakdown Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

42 A

Power Dissipation-Max (Abs) :

300 W

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Height :

21.46 mm

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Rise Time :

15ns

DS Breakdown Voltage-Min :

200 V

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Package :

Tube

Mount :

Through Hole

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 4mA

Base Product Number :

IXFH42

Channel Mode :

Enhancement

Number of Terminals :

3

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Power Dissipation-Max :

300W Tc

ECCN Code :

EAR99