IXFH42N20

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Mfr.Part #
IXFH42N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 42A TO247AD
Stock
22,172
In Stock :
22,172

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
60m Ω @ 500mA, 10V
Voltage - Rated DC :
200V
Length :
16.26 mm
Power Dissipation Ambient-Max :
300 W
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Base Product Number :
IXFH42
JEDEC-95 Code :
TO-247AD
Product Type :
MOSFET
Fall Time (Typ) :
16 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Qualification Status :
Not Qualified
Package :
Tube
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Drain to Source Voltage (Vdss) :
200V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
300W
Height :
21.46 mm
Pbfree Code :
yes
Rise Time :
15ns
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
42 A
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
200 V
Current Rating :
42A
Package Shape :
RECTANGULAR
Number of Pins :
3
Terminal Position :
Single
Tradename :
HyperFET
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Drain to Source Breakdown Voltage :
200V
Brand :
IXYS
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-247AD (IXFH)
Number of Channels :
1 Channel
Series :
HiPerFET™
Transistor Application :
SWITCHING
Published :
2000
Element Configuration :
Single
Surface Mount :
No
Power Dissipation-Max (Abs) :
300 W
Power Dissipation-Max :
300W Tc
Mount :
Through Hole
Number of Terminations :
3
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
168A
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Continuous Drain Current (ID) :
42A
Case Connection :
DRAIN
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Packaging :
Tube
Number of Terminals :
3
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Turn-Off Delay Time :
72 ns
Transistor Polarity :
N-Channel
FET Feature :
--
Width :
5.3 mm
Moisture Sensitivity Level (MSL) :
Not Applicable
Maximum Operating Temperature :
+ 150 C
Factory Lead Time :
8 Weeks
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Product Status :
Active
Drain-source On Resistance-Max :
0.06Ohm
Datasheets
IXFH42N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH42N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, IXFH42N20 pinout, IXFH42N20 datasheet PDF, IXFH42N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH42N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH42N20


N-Channel Tube 60m Ω @ 500mA, 10V ±20V 4400pF @ 25V 220nC @ 10V 200V TO-247-3

IXFH42N20 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 42A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 42 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 168A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH42N20 Features


a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 168A.
a 200V drain to source voltage (Vdss)


IXFH42N20 Applications


There are a lot of IXYS
IXFH42N20 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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