IXFH42N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Power Dissipation Ambient-Max :

300 W

Package / Case :

TO-247-3

Power Dissipation-Max (Abs) :

300 W

Mount :

Through Hole

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Turn-Off Delay Time :

72 ns

Published :

2000

Tradename :

HyperFET

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

60m Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

168A

Length :

16.26 mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

DS Breakdown Voltage-Min :

200 V

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Supplier Device Package :

TO-247AD (IXFH)

FET Type :

N-Channel

Product Status :

Active

Terminal Position :

Single

Number of Elements :

1

Configuration :

Single

Width :

5.3 mm

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Surface Mount :

No

Case Connection :

DRAIN

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Power Dissipation :

300W

Power Dissipation-Max :

300W Tc

Current Rating :

42A

Base Product Number :

IXFH42

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

200V

Drain-source On Resistance-Max :

0.06Ohm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Power Dissipation (Max) :

300W (Tc)

Brand :

IXYS

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Fall Time (Typ) :

16 ns

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 4mA

Package Shape :

RECTANGULAR

Rise Time :

15ns

Series :

HiPerFET™

Number of Pins :

3

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

42 A

Height :

21.46 mm

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

JEDEC-95 Code :

TO-247AD

FET Feature :

--

Vgs (Max) :

±20V

Product Type :

MOSFET

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Pbfree Code :

yes

Continuous Drain Current (ID) :

42A

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V