IXFH42N20
- Mfr.Part #
- IXFH42N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 42A TO247AD
- Stock
- 22,172
- In Stock :
- 22,172
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 500mA, 10V
- Voltage - Rated DC :
- 200V
- Length :
- 16.26 mm
- Power Dissipation Ambient-Max :
- 300 W
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXFH42
- JEDEC-95 Code :
- TO-247AD
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 16 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Package :
- Tube
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300W
- Height :
- 21.46 mm
- Pbfree Code :
- yes
- Rise Time :
- 15ns
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 42 A
- Package / Case :
- TO-247-3
- DS Breakdown Voltage-Min :
- 200 V
- Current Rating :
- 42A
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Terminal Position :
- Single
- Tradename :
- HyperFET
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Channels :
- 1 Channel
- Series :
- HiPerFET™
- Transistor Application :
- SWITCHING
- Published :
- 2000
- Element Configuration :
- Single
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation-Max :
- 300W Tc
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 168A
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Continuous Drain Current (ID) :
- 42A
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Packaging :
- Tube
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Turn-Off Delay Time :
- 72 ns
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Width :
- 5.3 mm
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Maximum Operating Temperature :
- + 150 C
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.06Ohm
- Datasheets
- IXFH42N20

N-Channel Tube 60m Ω @ 500mA, 10V ±20V 4400pF @ 25V 220nC @ 10V 200V TO-247-3
IXFH42N20 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 42A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 42 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 168A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH42N20 Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 168A.
a 200V drain to source voltage (Vdss)
IXFH42N20 Applications
There are a lot of IXYS
IXFH42N20 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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