IXFH40N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

160m Ω @ 500mA, 10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4.5V @ 4mA

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Turn-Off Delay Time :

42 ns

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

160A

Series :

HiPerFET™

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Dual Supply Voltage :

500V

Number of Elements :

1

Reach Compliance Code :

Compliant

Manufacturer :

IXYS Corporation

Power Dissipation :

560W

Nominal Vgs :

5 V

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

4850pF @ 25V

Drain Current-Max (Abs) (ID) :

40 A

Drain-source On Resistance-Max :

0.16 Ω

Supplier Device Package :

TO-247AD (IXFH)

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

FET Feature :

--

Rise Time :

13ns

Reverse Recovery Time :

250 ns

Fall Time (Typ) :

8 ns

Termination :

Through Hole

Threshold Voltage :

5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Package :

Tube

Resistance :

140mOhm

Product Status :

Obsolete

Number of Terminals :

3

Power Dissipation-Max (Abs) :

560 W

Power Dissipation-Max :

560W Tc

Avalanche Energy Rating (Eas) :

2500 mJ

Gate to Source Voltage (Vgs) :

30V

Weight :

6g

Element Configuration :

Single

Package Shape :

RECTANGULAR

Surface Mount :

No

Continuous Drain Current (ID) :

40A

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Number of Pins :

3

Power Dissipation (Max) :

560W (Tc)

Base Product Number :

IXFH40

Published :

2003

Terminal Position :

Single

Transistor Element Material :

SILICON