IXFH40N50Q

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Mfr.Part #
IXFH40N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 40A TO247AD
Stock
21
In Stock :
21

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
40A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Package / Case :
TO-247-3
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Rds On (Max) @ Id, Vgs :
140m Ω @ 500mA, 10V
Case Connection :
DRAIN
Channel Mode :
Enhancement
Base Product Number :
IXFH40
Manufacturer :
IXYS
Power Dissipation (Max) :
500W (Tc)
Polarity/Channel Type :
N-Channel
Configuration :
Single
Brand :
IXYS
Element Configuration :
Single
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Transistor Polarity :
N-Channel
RoHS :
Details
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.14Ohm
DS Breakdown Voltage-Min :
500 V
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
Number of Terminations :
3
FET Feature :
--
Transistor Element Material :
SILICON
Mount :
Through Hole
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Vgs (Max) :
±30V
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
2 mJ
FET Type :
N-Channel
Fall Time (Typ) :
14 ns
Power Dissipation-Max :
500W Tc
Rise Time :
20ns
Package :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
500V
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Product Type :
MOSFET
Height :
21.46 mm
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
Current Rating :
40A
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
500V
Number of Channels :
1 Channel
Surface Mount :
No
Transistor Type :
1 N-Channel
Subcategory :
MOSFETs
Length :
16.26 mm
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Series :
HiPerFET™
Published :
2003
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
160A
Number of Terminals :
3
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Width :
5.3 mm
Power Dissipation :
500W
Pin Count :
3
Drain to Source Voltage (Vdss) :
500V
Turn-Off Delay Time :
56 ns
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N50Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFH40N50Q pinout, IXFH40N50Q datasheet PDF, IXFH40N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH40N50Q


N-Channel Tube 140m Ω @ 500mA, 10V ±30V 3800pF @ 25V 130nC @ 10V 500V TO-247-3

IXFH40N50Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2 mJ.A device's maximum input capacitance is 3800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH40N50Q Features


the avalanche energy rating (Eas) is 2 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)


IXFH40N50Q Applications


There are a lot of IXYS
IXFH40N50Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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