IXFH40N50Q
- Mfr.Part #
- IXFH40N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 40A TO247AD
- Stock
- 21
- In Stock :
- 21
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Details
- Turn-Off Delay Time :
- 56 ns
- Packaging :
- Tube
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Width :
- 5.3 mm
- Tradename :
- HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 40A
- Rise Time :
- 20ns
- JEDEC-95 Code :
- TO-247AD
- Minimum Operating Temperature :
- - 55 C
- Voltage - Rated DC :
- 500V
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 500W
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 14 ns
- Avalanche Energy Rating (Eas) :
- 2 mJ
- Number of Terminations :
- 3
- Height :
- 21.46 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 500mA, 10V
- Power Dissipation (Max) :
- 500W (Tc)
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Published :
- 2003
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 500V
- Length :
- 16.26 mm
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 40A
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Package :
- Tube
- Subcategory :
- MOSFETs
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- Series :
- HiPerFET™
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Base Product Number :
- IXFH40
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 0.14Ohm
- Product Status :
- Active
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 160A
- Datasheets
- IXFH40N50Q

N-Channel Tube 140m Ω @ 500mA, 10V ±30V 3800pF @ 25V 130nC @ 10V 500V TO-247-3
IXFH40N50Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2 mJ.A device's maximum input capacitance is 3800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH40N50Q Features
the avalanche energy rating (Eas) is 2 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)
IXFH40N50Q Applications
There are a lot of IXYS
IXFH40N50Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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