IXFH40N50Q

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Mfr.Part #
IXFH40N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 40A TO247AD
Stock
21
In Stock :
21

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
500V
JESD-30 Code :
R-PSFM-T3
RoHS :
Details
Turn-Off Delay Time :
56 ns
Packaging :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Width :
5.3 mm
Tradename :
HiPerFET
Operating Mode :
ENHANCEMENT MODE
Current Rating :
40A
Rise Time :
20ns
JEDEC-95 Code :
TO-247AD
Minimum Operating Temperature :
- 55 C
Voltage - Rated DC :
500V
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Power Dissipation :
500W
Transistor Type :
1 N-Channel
Vgs (Max) :
±30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
500 V
Element Configuration :
Single
Fall Time (Typ) :
14 ns
Avalanche Energy Rating (Eas) :
2 mJ
Number of Terminations :
3
Height :
21.46 mm
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
Rds On (Max) @ Id, Vgs :
140m Ω @ 500mA, 10V
Power Dissipation (Max) :
500W (Tc)
Channel Mode :
Enhancement
Surface Mount :
No
Published :
2003
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
500V
Length :
16.26 mm
Product Type :
MOSFET
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
40A
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Pin Count :
3
Package :
Tube
Subcategory :
MOSFETs
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Configuration :
Single
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Power Dissipation-Max :
500W Tc
Series :
HiPerFET™
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Base Product Number :
IXFH40
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Mounting Type :
Through Hole
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Mounting Style :
Through Hole
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.14Ohm
Product Status :
Active
Lead Free :
Lead Free
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
160A
Datasheets
IXFH40N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXFH40N50Q pinout, IXFH40N50Q datasheet PDF, IXFH40N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH40N50Q


N-Channel Tube 140m Ω @ 500mA, 10V ±30V 3800pF @ 25V 130nC @ 10V 500V TO-247-3

IXFH40N50Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2 mJ.A device's maximum input capacitance is 3800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH40N50Q Features


the avalanche energy rating (Eas) is 2 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)


IXFH40N50Q Applications


There are a lot of IXYS
IXFH40N50Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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