IXFH40N30Q
- Mfr.Part #
- IXFH40N30Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO247AD
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 300 W
- Continuous Drain Current (ID) :
- 40A
- Pulsed Drain Current-Max (IDM) :
- 160A
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFH40
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 300V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Product Status :
- Obsolete
- Mounting Style :
- Through Hole
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-247AD (IXFH)
- Factory Lead Time :
- 8 Weeks
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-247
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 300W Tc
- Element Configuration :
- Single
- Rise Time :
- 35ns
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 500mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.085 Ω
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 12 ns
- Power Dissipation :
- 300W
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 40 ns
- DS Breakdown Voltage-Min :
- 300 V
- Packaging :
- Tube
- Published :
- 2011
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Package :
- Tube
- Current Rating :
- 40A
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- Compliant
- Resistance :
- 80mOhm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 40 A
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 300V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Datasheets
- IXFH40N30Q

N-Channel Tube 80m Ω @ 500mA, 10V ±20V 3100pF @ 25V 140nC @ 10V 300V TO-247-3
IXFH40N30Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=300V, and this device has a drain-to-source breakdown voltage of 300V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 300 V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH40N30Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFH40N30Q Applications
There are a lot of IXYS
IXFH40N30Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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