IXFH40N30Q

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Mfr.Part #
IXFH40N30Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO247AD
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max (Abs) :
300 W
Continuous Drain Current (ID) :
40A
Pulsed Drain Current-Max (IDM) :
160A
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Transistor Polarity :
N-Channel
Base Product Number :
IXFH40
FET Feature :
--
Transistor Element Material :
SILICON
Number of Terminals :
3
Power Dissipation (Max) :
300W (Tc)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Breakdown Voltage :
300V
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Product Status :
Obsolete
Mounting Style :
Through Hole
Lead Free :
Lead Free
Supplier Device Package :
TO-247AD (IXFH)
Factory Lead Time :
8 Weeks
Avalanche Energy Rating (Eas) :
1000 mJ
Series :
HiPerFET™
JEDEC-95 Code :
TO-247
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
300W Tc
Element Configuration :
Single
Rise Time :
35ns
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
80m Ω @ 500mA, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 25V
Number of Terminations :
3
Voltage - Rated DC :
300V
Manufacturer :
IXYS Corporation
Mounting Type :
Through Hole
Pin Count :
3
Drain-source On Resistance-Max :
0.085 Ω
Package / Case :
TO-247-3
Fall Time (Typ) :
12 ns
Power Dissipation :
300W
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Mount :
Through Hole
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
40 ns
DS Breakdown Voltage-Min :
300 V
Packaging :
Tube
Published :
2011
Pbfree Code :
yes
FET Type :
N-Channel
JESD-609 Code :
e1
Package :
Tube
Current Rating :
40A
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
Compliant
Resistance :
80mOhm
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
Not Applicable
Drain Current-Max (Abs) (ID) :
40 A
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
300V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Datasheets
IXFH40N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, IXFH40N30Q pinout, IXFH40N30Q datasheet PDF, IXFH40N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH40N30Q


N-Channel Tube 80m Ω @ 500mA, 10V ±20V 3100pF @ 25V 140nC @ 10V 300V TO-247-3

IXFH40N30Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=300V, and this device has a drain-to-source breakdown voltage of 300V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 300 V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH40N30Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)


IXFH40N30Q Applications


There are a lot of IXYS
IXFH40N30Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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