IXFH40N30

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Mfr.Part #
IXFH40N30
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO247AD
Stock
5
In Stock :
5

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
45 ns
Mounting Type :
Through Hole
Series :
HiPerFET™
Element Configuration :
Single
Case Connection :
DRAIN
Threshold Voltage :
4V
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
FET Feature :
--
DS Breakdown Voltage-Min :
300 V
Number of Pins :
3
Configuration :
Single
Mount :
Through Hole
Factory Lead Time :
8 Weeks
Drain-source On Resistance-Max :
0.085 Ω
FET Type :
N-Channel
REACH SVHC :
No SVHC
Product Category :
MOSFET
JEDEC-95 Code :
TO-247
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
300V
Drain Current-Max (Abs) (ID) :
40 A
Voltage - Rated DC :
300V
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
40A
Rds On (Max) @ Id, Vgs :
85m Ω @ 500mA, 10V
Manufacturer :
IXYS
Power Dissipation (Max) :
300W (Tc)
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Channel Mode :
Enhancement
Recovery Time :
200 ns
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
300W
Length :
16.26 mm
Power Dissipation-Max (Abs) :
300 W
Height :
21.46 mm
Current - Continuous Drain (Id) @ 25°C :
40A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Surface Mount :
No
ECCN Code :
EAR99
Number of Terminations :
3
Package :
Tube
Tradename :
HyperFET
Rise Time :
60ns
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Mounting Style :
Through Hole
Radiation Hardening :
No
JESD-609 Code :
e1
Resistance :
85mOhm
Power Dissipation Ambient-Max :
300 W
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Dual Supply Voltage :
300V
Published :
2000
Number of Channels :
1 Channel
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Brand :
IXYS
Vgs (Max) :
±20V
Nominal Vgs :
4 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Current Rating :
40A
Drain to Source Breakdown Voltage :
300V
Package / Case :
TO-247-3
Width :
5.3 mm
Qualification Status :
Not Qualified
Power Dissipation-Max :
300W Tc
Supplier Device Package :
TO-247AD (IXFH)
Product Status :
Active
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Turn-Off Delay Time :
75 ns
Vgs(th) (Max) @ Id :
4V @ 4mA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
160 A
Reach Compliance Code :
Compliant
Base Product Number :
IXFH40
Transistor Type :
1 N-Channel
Number of Elements :
1
Datasheets
IXFH40N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH40N30 pinout, IXFH40N30 datasheet PDF, IXFH40N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH40N30


N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3

IXFH40N30 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 160 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH40N30 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)


IXFH40N30 Applications


There are a lot of IXYS
IXFH40N30 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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