IXFH40N30

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Mfr.Part #
IXFH40N30
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO247AD
Stock
5
In Stock :
5

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
45 ns
Element Configuration :
Single
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
300V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.3 mm
Brand :
IXYS
ECCN Code :
EAR99
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
FET Type :
N-Channel
Lead Free :
Lead Free
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
300V
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Power Dissipation-Max (Abs) :
300 W
Tradename :
HyperFET
Current Rating :
40A
Transistor Element Material :
SILICON
Number of Elements :
1
Power Dissipation-Max :
300W Tc
Supplier Device Package :
TO-247AD (IXFH)
Rds On (Max) @ Id, Vgs :
85m Ω @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Channel Mode :
Enhancement
Published :
2000
Maximum Operating Temperature :
+ 150 C
Height :
21.46 mm
Turn-Off Delay Time :
75 ns
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Voltage - Rated DC :
300V
Mounting Style :
Through Hole
JESD-609 Code :
e1
Drain-source On Resistance-Max :
0.085 Ω
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Factory Lead Time :
8 Weeks
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Resistance :
85mOhm
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Pin Count :
3
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
40 A
Continuous Drain Current (ID) :
40A
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Length :
16.26 mm
Power Dissipation Ambient-Max :
300 W
Power Dissipation :
300W
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
160 A
Base Product Number :
IXFH40
Gate to Source Voltage (Vgs) :
20V
Recovery Time :
200 ns
Product Type :
MOSFET
DS Breakdown Voltage-Min :
300 V
Threshold Voltage :
4V
Dual Supply Voltage :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Series :
HiPerFET™
REACH SVHC :
No SVHC
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 4mA
JEDEC-95 Code :
TO-247
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Mount :
Through Hole
Transistor Application :
SWITCHING
Rise Time :
60ns
Nominal Vgs :
4 V
Product Status :
Active
Datasheets
IXFH40N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH40N30 pinout, IXFH40N30 datasheet PDF, IXFH40N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH40N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH40N30


N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3

IXFH40N30 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 160 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH40N30 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)


IXFH40N30 Applications


There are a lot of IXYS
IXFH40N30 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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