IXFH40N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

300W (Tc)

Number of Terminals :

3

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Width :

5.3 mm

Power Dissipation Ambient-Max :

300 W

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

85m Ω @ 500mA, 10V

Fall Time (Typ) :

45 ns

RoHS :

Details

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2000

Drain to Source Breakdown Voltage :

300V

Length :

16.26 mm

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

300V

Vgs (Max) :

±20V

Base Product Number :

IXFH40

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

75 ns

Packaging :

Tube

Mounting Style :

Through Hole

Reach Compliance Code :

Compliant

Height :

21.46 mm

DS Breakdown Voltage-Min :

300 V

ECCN Code :

EAR99

Current Rating :

40A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Configuration :

Single

Element Configuration :

Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

40 A

Series :

HiPerFET™

Brand :

IXYS

Power Dissipation :

300W

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HyperFET

Supplier Device Package :

TO-247AD (IXFH)

Vgs(th) (Max) @ Id :

4V @ 4mA

Terminal Position :

Single

Dual Supply Voltage :

300V

JESD-609 Code :

e1

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

FET Feature :

--

Transistor Type :

1 N-Channel

Number of Pins :

3

Recovery Time :

200 ns

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

300V

Pin Count :

3

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

FET Type :

N-Channel

Resistance :

85mOhm

Rise Time :

60ns

Pulsed Drain Current-Max (IDM) :

160 A

Surface Mount :

No

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

40A

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247

Mount :

Through Hole

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.085 Ω

Power Dissipation-Max (Abs) :

300 W

Product Status :

Active

Nominal Vgs :

4 V

Lead Free :

Lead Free