IXFH40N30
- Mfr.Part #
- IXFH40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO247AD
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 45 ns
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.3 mm
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 300V
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 300 W
- Tradename :
- HyperFET
- Current Rating :
- 40A
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-247AD (IXFH)
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Published :
- 2000
- Maximum Operating Temperature :
- + 150 C
- Height :
- 21.46 mm
- Turn-Off Delay Time :
- 75 ns
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 300V
- Mounting Style :
- Through Hole
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.085 Ω
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Resistance :
- 85mOhm
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Pin Count :
- 3
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 40 A
- Continuous Drain Current (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Length :
- 16.26 mm
- Power Dissipation Ambient-Max :
- 300 W
- Power Dissipation :
- 300W
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 160 A
- Base Product Number :
- IXFH40
- Gate to Source Voltage (Vgs) :
- 20V
- Recovery Time :
- 200 ns
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 300 V
- Threshold Voltage :
- 4V
- Dual Supply Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Series :
- HiPerFET™
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- JEDEC-95 Code :
- TO-247
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Rise Time :
- 60ns
- Nominal Vgs :
- 4 V
- Product Status :
- Active
- Datasheets
- IXFH40N30

N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3
IXFH40N30 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 160 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)
IXFH40N30 Applications
There are a lot of IXYS
IXFH40N30 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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