IXFH40N30
- Mfr.Part #
- IXFH40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO247AD
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 45 ns
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Threshold Voltage :
- 4V
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 300 V
- Number of Pins :
- 3
- Configuration :
- Single
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Drain-source On Resistance-Max :
- 0.085 Ω
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-247
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 300V
- Drain Current-Max (Abs) (ID) :
- 40 A
- Voltage - Rated DC :
- 300V
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 40A
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 500mA, 10V
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 300W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- Recovery Time :
- 200 ns
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300W
- Length :
- 16.26 mm
- Power Dissipation-Max (Abs) :
- 300 W
- Height :
- 21.46 mm
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Package :
- Tube
- Tradename :
- HyperFET
- Rise Time :
- 60ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Mounting Style :
- Through Hole
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Resistance :
- 85mOhm
- Power Dissipation Ambient-Max :
- 300 W
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Dual Supply Voltage :
- 300V
- Published :
- 2000
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- 40A
- Drain to Source Breakdown Voltage :
- 300V
- Package / Case :
- TO-247-3
- Width :
- 5.3 mm
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-247AD (IXFH)
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pulsed Drain Current-Max (IDM) :
- 160 A
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFH40
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Datasheets
- IXFH40N30

N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3
IXFH40N30 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 160 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)
IXFH40N30 Applications
There are a lot of IXYS
IXFH40N30 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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