IXFH36N60P
- Mfr.Part #
- IXFH36N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO247AD
- Stock
- 370
- In Stock :
- 370
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 30 ns
- Turn-Off Delay Time :
- 80 ns
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Surface Mount :
- No
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 650W (Tc)
- Package / Case :
- TO-247-3
- Continuous Drain Current Id :
- 36A
- Height :
- 21.46mm
- Element Configuration :
- Single
- FET Feature :
- --
- Case Connection :
- DRAIN
- Base Product Number :
- IXFH36
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 80A
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 600V
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Power Dissipation :
- 650W
- Subcategory :
- MOSFETs
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 600V
- Polarity/Channel Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 650W Tc
- Number of Elements per Chip :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Threshold Voltage :
- 5V
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- DS Breakdown Voltage-Min :
- 600 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- +150 °C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.19Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Number of Terminals :
- 3
- Packaging :
- Tube
- Channel Type :
- N
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Tradename :
- HiPerFET
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Voltage - Rated DC :
- 600V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Package Type :
- TO-247
- Gate Charge (Qg) (Max) @ Vgs :
- 102nC @ 10V
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Published :
- 2006
- Mounting Type :
- Through Hole
- MSL :
- -
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 22 ns
- Length :
- 16.26mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- HiPerFET™, PolarHT™
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification :
- -
- Continuous Drain Current (ID) :
- 36A
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- -55 °C
- Current Rating :
- 36A
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- Rise Time :
- 25ns
- Width :
- 5.3mm
- Supplier Device Package :
- TO-247AD (IXFH)
- Datasheets
- IXFH36N60P

N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-247-3
IXFH36N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 5800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH36N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFH36N60P Applications
There are a lot of IXYS
IXFH36N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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