IXFH36N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 4mA

Reach Compliance Code :

Compliant

Mount :

Through Hole

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Base Product Number :

IXFH36

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Configuration :

Single

Threshold Voltage :

5V

Continuous Drain Current Id :

36A

Surface Mount :

No

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Product Status :

Active

Number of Elements per Chip :

1

Number of Elements :

1

MSL :

-

Turn-Off Delay Time :

80 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AD

Element Configuration :

Single

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Number of Terminations :

3

Power Dissipation :

650W

Continuous Drain Current (ID) :

36A

Pulsed Drain Current-Max (IDM) :

80A

DS Breakdown Voltage-Min :

600 V

Minimum Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V

Turn On Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Published :

2006

Channel Mode :

Enhancement

Product Type :

MOSFET

Package / Case :

TO-247-3

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

FET Feature :

--

Current Rating :

36A

Voltage - Rated DC :

600V

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Brand :

IXYS

JESD-609 Code :

e1

Vgs (Max) :

±30V

Series :

HiPerFET™, PolarHT™

Qualification :

-

Package :

Tube

Avalanche Energy Rating (Eas) :

1500 mJ

Product Category :

MOSFET

Rise Time :

25ns

Terminal Position :

Single

Subcategory :

MOSFETs

Supplier Device Package :

TO-247AD (IXFH)

Package Type :

TO-247

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

190m Ω @ 18A, 10V

Power Dissipation-Max :

650W Tc

Drain to Source Breakdown Voltage :

600V

Pbfree Code :

yes

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

21.46mm

Maximum Operating Temperature :

+150 °C

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Width :

5.3mm

Power Dissipation (Max) :

650W (Tc)

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Length :

16.26mm

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

N-Channel

Channel Type :

N

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.19Ohm