IXFH36N60P

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Mfr.Part #
IXFH36N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 36A TO247AD
Stock
370
In Stock :
370

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Package Type :
TO-247
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Height :
21.46mm
Gate to Source Voltage (Vgs) :
30V
MSL :
-
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
190m Ω @ 18A, 10V
FET Type :
N-Channel
Brand :
IXYS
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Turn On Delay Time :
30 ns
Terminal Position :
Single
Product Type :
MOSFET
Package :
Tube
Number of Elements per Chip :
1
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Type :
N
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
102nC @ 10V
Drain to Source Breakdown Voltage :
600V
Minimum Operating Temperature :
-55 °C
DS Breakdown Voltage-Min :
600 V
Pbfree Code :
yes
Rise Time :
25ns
Tradename :
HiPerFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Subcategory :
MOSFETs
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
80 ns
Width :
5.3mm
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.19Ohm
Surface Mount :
No
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
REACH SVHC :
No SVHC
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-247AD
Power Dissipation :
650W
Reach Compliance Code :
Compliant
Pin Count :
3
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
JESD-609 Code :
e1
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
1500 mJ
Product Status :
Active
Transistor Application :
SWITCHING
Power Dissipation-Max :
650W Tc
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Package Shape :
RECTANGULAR
Voltage - Rated DC :
600V
Number of Channels :
1 Channel
Length :
16.26mm
Series :
HiPerFET™, PolarHT™
Current Rating :
36A
Continuous Drain Current (ID) :
36A
Fall Time (Typ) :
22 ns
Packaging :
Tube
Lead Free :
Lead Free
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
80A
Transistor Polarity :
N-Channel
Qualification :
-
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 4mA
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Details
Published :
2006
Supplier Device Package :
TO-247AD (IXFH)
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current Id :
36A
Maximum Operating Temperature :
+150 °C
Threshold Voltage :
5V
Power Dissipation (Max) :
650W (Tc)
Base Product Number :
IXFH36
Vgs (Max) :
±30V
Datasheets
IXFH36N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, IXFH36N60P pinout, IXFH36N60P datasheet PDF, IXFH36N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N60P


N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-247-3

IXFH36N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 5800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH36N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFH36N60P Applications


There are a lot of IXYS
IXFH36N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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