IXFH36N60P
- Mfr.Part #
- IXFH36N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO247AD
- Stock
- 370
- In Stock :
- 370
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Package Type :
- TO-247
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 21.46mm
- Gate to Source Voltage (Vgs) :
- 30V
- MSL :
- -
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- FET Type :
- N-Channel
- Brand :
- IXYS
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Turn On Delay Time :
- 30 ns
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Package :
- Tube
- Number of Elements per Chip :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Type :
- N
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 102nC @ 10V
- Drain to Source Breakdown Voltage :
- 600V
- Minimum Operating Temperature :
- -55 °C
- DS Breakdown Voltage-Min :
- 600 V
- Pbfree Code :
- yes
- Rise Time :
- 25ns
- Tradename :
- HiPerFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Subcategory :
- MOSFETs
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 80 ns
- Width :
- 5.3mm
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 600V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Surface Mount :
- No
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- REACH SVHC :
- No SVHC
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-247AD
- Power Dissipation :
- 650W
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 650W Tc
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 600V
- Number of Channels :
- 1 Channel
- Length :
- 16.26mm
- Series :
- HiPerFET™, PolarHT™
- Current Rating :
- 36A
- Continuous Drain Current (ID) :
- 36A
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 80A
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS :
- Details
- Published :
- 2006
- Supplier Device Package :
- TO-247AD (IXFH)
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current Id :
- 36A
- Maximum Operating Temperature :
- +150 °C
- Threshold Voltage :
- 5V
- Power Dissipation (Max) :
- 650W (Tc)
- Base Product Number :
- IXFH36
- Vgs (Max) :
- ±30V
- Datasheets
- IXFH36N60P

N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-247-3
IXFH36N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 5800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH36N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFH36N60P Applications
There are a lot of IXYS
IXFH36N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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