IXFH36N60P

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Mfr.Part #
IXFH36N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 36A TO247AD
Stock
370
In Stock :
370

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
30 ns
Turn-Off Delay Time :
80 ns
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
ECCN Code :
EAR99
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Surface Mount :
No
FET Type :
N-Channel
Power Dissipation (Max) :
650W (Tc)
Package / Case :
TO-247-3
Continuous Drain Current Id :
36A
Height :
21.46mm
Element Configuration :
Single
FET Feature :
--
Case Connection :
DRAIN
Base Product Number :
IXFH36
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
80A
RoHS :
Details
Drain to Source Breakdown Voltage :
600V
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Power Dissipation :
650W
Subcategory :
MOSFETs
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
600V
Polarity/Channel Type :
N-Channel
REACH SVHC :
No SVHC
Power Dissipation-Max :
650W Tc
Number of Elements per Chip :
1
Gate to Source Voltage (Vgs) :
30V
Threshold Voltage :
5V
Manufacturer :
IXYS
JEDEC-95 Code :
TO-247AD
DS Breakdown Voltage-Min :
600 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+150 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.19Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Number of Terminals :
3
Packaging :
Tube
Channel Type :
N
Number of Pins :
3
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Tradename :
HiPerFET
Mount :
Through Hole
Product Type :
MOSFET
Voltage - Rated DC :
600V
Lead Free :
Lead Free
Pin Count :
3
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
5V @ 4mA
Package Type :
TO-247
Gate Charge (Qg) (Max) @ Vgs :
102nC @ 10V
Product Status :
Active
Number of Channels :
1 Channel
Number of Terminations :
3
Published :
2006
Mounting Type :
Through Hole
MSL :
-
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
22 ns
Length :
16.26mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
HiPerFET™, PolarHT™
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification :
-
Continuous Drain Current (ID) :
36A
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Minimum Operating Temperature :
-55 °C
Current Rating :
36A
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
190m Ω @ 18A, 10V
Rise Time :
25ns
Width :
5.3mm
Supplier Device Package :
TO-247AD (IXFH)
Datasheets
IXFH36N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, IXFH36N60P pinout, IXFH36N60P datasheet PDF, IXFH36N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N60P


N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-247-3

IXFH36N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 5800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH36N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFH36N60P Applications


There are a lot of IXYS
IXFH36N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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