IXFH36N55Q2

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Mfr.Part #
IXFH36N55Q2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 550V 36A TO247AD
Stock
35,870
In Stock :
35,870

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5.3 mm
Mount :
Through Hole
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 4mA
Mounting Style :
Through Hole
Power Dissipation :
560W
Drain to Source Voltage (Vdss) :
550V
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Pin Count :
3
JEDEC-95 Code :
TO-247AD
Terminal Form :
THROUGH-HOLE
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±30V
Power Dissipation (Max) :
560W (Tc)
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Number of Terminals :
3
Packaging :
Tube
DS Breakdown Voltage-Min :
550 V
Product Status :
Active
Transistor Application :
SWITCHING
Supplier Device Package :
TO-247AD (IXFH)
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Rise Time :
13ns
Surface Mount :
No
Product Type :
MOSFET
Power Dissipation-Max :
560W Tc
Height :
21.46 mm
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Number of Pins :
3
Series :
HiPerFET™
Base Product Number :
IXFH36
Brand :
IXYS
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
550V
RoHS :
Details
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
2500 mJ
Drain-source On Resistance-Max :
0.16Ohm
Transistor Polarity :
N-Channel
Published :
2004
Pbfree Code :
yes
FET Feature :
--
Transistor Element Material :
SILICON
Tradename :
HyperFET
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 25V
Turn-Off Delay Time :
42 ns
Number of Elements :
1
Fall Time (Typ) :
8 ns
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
36A
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-247-3
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Rds On (Max) @ Id, Vgs :
180m Ω @ 500mA, 10V
Element Configuration :
Single
Subcategory :
MOSFETs
Pulsed Drain Current-Max (IDM) :
144A
Length :
16.26 mm
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFH36N55Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N55Q2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, IXFH36N55Q2 pinout, IXFH36N55Q2 datasheet PDF, IXFH36N55Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N55Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N55Q2


N-Channel Tube 180m Ω @ 500mA, 10V ±30V 4100pF @ 25V 110nC @ 10V 550V TO-247-3

IXFH36N55Q2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=550V, and ID flows to VDS at 550VVDS, the drain-source breakdown voltage is 550V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 144A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 550 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 550V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH36N55Q2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 144A.
a 550V drain to source voltage (Vdss)


IXFH36N55Q2 Applications


There are a lot of IXYS
IXFH36N55Q2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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