IXFH36N55Q2
- Mfr.Part #
- IXFH36N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 36A TO247AD
- Stock
- 35,870
- In Stock :
- 35,870
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.3 mm
- Mount :
- Through Hole
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Mounting Style :
- Through Hole
- Power Dissipation :
- 560W
- Drain to Source Voltage (Vdss) :
- 550V
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 560W (Tc)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 550 V
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 13ns
- Surface Mount :
- No
- Product Type :
- MOSFET
- Power Dissipation-Max :
- 560W Tc
- Height :
- 21.46 mm
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Series :
- HiPerFET™
- Base Product Number :
- IXFH36
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 550V
- RoHS :
- Details
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain-source On Resistance-Max :
- 0.16Ohm
- Transistor Polarity :
- N-Channel
- Published :
- 2004
- Pbfree Code :
- yes
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Tradename :
- HyperFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 25V
- Turn-Off Delay Time :
- 42 ns
- Number of Elements :
- 1
- Fall Time (Typ) :
- 8 ns
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 36A
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-247-3
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 10V
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Pulsed Drain Current-Max (IDM) :
- 144A
- Length :
- 16.26 mm
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXFH36N55Q2

N-Channel Tube 180m Ω @ 500mA, 10V ±30V 4100pF @ 25V 110nC @ 10V 550V TO-247-3
IXFH36N55Q2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=550V, and ID flows to VDS at 550VVDS, the drain-source breakdown voltage is 550V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 144A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 550 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 550V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH36N55Q2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 144A.
a 550V drain to source voltage (Vdss)
IXFH36N55Q2 Applications
There are a lot of IXYS
IXFH36N55Q2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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