IXFH36N55Q
- Mfr.Part #
- IXFH36N55Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 36A TO247AD
- Stock
- 24,730
- In Stock :
- 24,730
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 500mA, 10V
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Configuration :
- Single
- Power Dissipation (Max) :
- 500W (Tc)
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-247AD
- Package :
- Tube
- Width :
- 5.3 mm
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 148A
- Mount :
- Through Hole
- Fall Time (Typ) :
- 15 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 128nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 54 ns
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 550 V
- Power Dissipation-Max :
- 500W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HyperFET
- Power Dissipation :
- 500W
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Brand :
- IXYS
- FET Type :
- N-Channel
- Surface Mount :
- No
- Supplier Device Package :
- TO-247AD (IXFH)
- Subcategory :
- MOSFETs
- Rise Time :
- 18ns
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 550V
- Drain to Source Breakdown Voltage :
- 550V
- Series :
- HiPerFET™
- Height :
- 21.46 mm
- RoHS :
- Details
- Base Product Number :
- IXFH36
- Product Category :
- MOSFET
- Length :
- 16.26 mm
- Continuous Drain Current (ID) :
- 36A
- Avalanche Energy Rating (Eas) :
- 2 mJ
- Drain-source On Resistance-Max :
- 0.16Ohm
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Terminal Position :
- Single
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Product Status :
- Active
- Datasheets
- IXFH36N55Q

N-Channel Tube 160m Ω @ 500mA, 10V ±30V 4500pF @ 25V 128nC @ 10V 550V TO-247-3
IXFH36N55Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2 mJ.A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 36A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 54 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 148A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 550 V.This transistor requires a 550V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH36N55Q Features
the avalanche energy rating (Eas) is 2 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 148A.
a 550V drain to source voltage (Vdss)
IXFH36N55Q Applications
There are a lot of IXYS
IXFH36N55Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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