IXFH36N55Q

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Mfr.Part #
IXFH36N55Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 550V 36A TO247AD
Stock
24,730
In Stock :
24,730

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
160m Ω @ 500mA, 10V
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Pin Count :
3
Configuration :
Single
Power Dissipation (Max) :
500W (Tc)
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
JEDEC-95 Code :
TO-247AD
Package :
Tube
Width :
5.3 mm
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
148A
Mount :
Through Hole
Fall Time (Typ) :
15 ns
Gate Charge (Qg) (Max) @ Vgs :
128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Package / Case :
TO-247-3
Number of Terminations :
3
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Turn-Off Delay Time :
54 ns
Mounting Style :
Through Hole
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
550 V
Power Dissipation-Max :
500W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HyperFET
Power Dissipation :
500W
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Pbfree Code :
yes
Brand :
IXYS
FET Type :
N-Channel
Surface Mount :
No
Supplier Device Package :
TO-247AD (IXFH)
Subcategory :
MOSFETs
Rise Time :
18ns
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
550V
Drain to Source Breakdown Voltage :
550V
Series :
HiPerFET™
Height :
21.46 mm
RoHS :
Details
Base Product Number :
IXFH36
Product Category :
MOSFET
Length :
16.26 mm
Continuous Drain Current (ID) :
36A
Avalanche Energy Rating (Eas) :
2 mJ
Drain-source On Resistance-Max :
0.16Ohm
Vgs (Max) :
±30V
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Transistor Application :
SWITCHING
Published :
2003
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Terminal Position :
Single
FET Feature :
--
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Product Status :
Active
Datasheets
IXFH36N55Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N55Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, IXFH36N55Q pinout, IXFH36N55Q datasheet PDF, IXFH36N55Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N55Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N55Q


N-Channel Tube 160m Ω @ 500mA, 10V ±30V 4500pF @ 25V 128nC @ 10V 550V TO-247-3

IXFH36N55Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2 mJ.A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 36A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 54 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 148A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 550 V.This transistor requires a 550V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH36N55Q Features


the avalanche energy rating (Eas) is 2 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 148A.
a 550V drain to source voltage (Vdss)


IXFH36N55Q Applications


There are a lot of IXYS
IXFH36N55Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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