IXFH36N50P

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Mfr.Part #
IXFH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247AD
Stock
2
In Stock :
2

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements per Chip :
1
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
RoHS :
Details
Supplier Device Package :
TO-247AD (IXFH)
Number of Pins :
3
Power Dissipation-Max (Abs) :
540 W
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
5V @ 4mA
Surface Mount :
No
DS Breakdown Voltage-Min :
500 V
Configuration :
Single
Transistor Polarity :
N-Channel
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Continuous Drain Current (ID) :
36A
Tradename :
HiPerFET
Width :
5.3mm
Published :
2011
Product Type :
MOSFET
Maximum Operating Temperature :
+150 °C
Gate to Source Voltage (Vgs) :
30V
Product Status :
Active
Product Category :
MOSFET
Number of Terminals :
3
Power Dissipation :
540W
Package Shape :
RECTANGULAR
Fall Time (Typ) :
21 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
MSL :
MSL 1 - Unlimited
Drain to Source Voltage (Vdss) :
500V
Terminal Position :
Single
Number of Elements :
1
Channel Type :
N
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
25 ns
Mount :
Through Hole
Current Rating :
36A
Brand :
IXYS
Qualification Status :
Not Qualified
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
90A
Radiation Hardening :
No
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Power Dissipation-Max :
540W Tc
Drain to Source Breakdown Voltage :
500V
Voltage - Rated DC :
500V
Avalanche Energy Rating (Eas) :
1500 mJ
Transistor Element Material :
SILICON
FET Feature :
--
Package :
Tube
Pin Count :
3
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Case Connection :
DRAIN
Power Dissipation (Max) :
540W (Tc)
Turn-Off Delay Time :
75 ns
FET Type :
N-Channel
Package Type :
TO-247AD
Drain-source On Resistance-Max :
0.17 Ω
Pbfree Code :
yes
Qualification :
-
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
Series :
HiPerFET™, PolarP2™
Transistor Application :
SWITCHING
Continuous Drain Current Id :
36A
Factory Lead Time :
5 Weeks
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27ns
Height :
21.46mm
Drain Current-Max (Abs) (ID) :
36 A
Length :
16.26mm
Base Product Number :
IXFH36
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Mounting Style :
Through Hole
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Datasheets
IXFH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, IXFH36N50P pinout, IXFH36N50P datasheet PDF, IXFH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V TO-247-3

IXFH36N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 36A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.36 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)


IXFH36N50P Applications


There are a lot of IXYS
IXFH36N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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