IXFH36N50P

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Mfr.Part #
IXFH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247AD
Stock
2
In Stock :
2

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Configuration :
Single
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation :
540W
Reach Compliance Code :
Compliant
Turn-Off Delay Time :
75 ns
Drain Current-Max (Abs) (ID) :
36 A
Rise Time :
27ns
Product Status :
Active
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Manufacturer :
IXYS
Tradename :
HiPerFET
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Product Type :
MOSFET
Base Product Number :
IXFH36
JEDEC-95 Code :
TO-247AD
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Continuous Drain Current Id :
36A
Minimum Operating Temperature :
-55 °C
FET Feature :
--
Vgs (Max) :
±30V
Channel Type :
N
Continuous Drain Current (ID) :
36A
Avalanche Energy Rating (Eas) :
1500 mJ
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Power Dissipation-Max (Abs) :
540 W
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
500V
Pulsed Drain Current-Max (IDM) :
90A
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Series :
HiPerFET™, PolarP2™
Power Dissipation (Max) :
540W (Tc)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Radiation Hardening :
No
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Case Connection :
DRAIN
Surface Mount :
No
Current Rating :
36A
Voltage - Rated DC :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
5.3mm
Product Category :
MOSFET
Number of Pins :
3
Terminal Position :
Single
Qualification Status :
Not Qualified
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements per Chip :
1
Fall Time (Typ) :
21 ns
Packaging :
Tube
Height :
21.46mm
Package :
Tube
Number of Terminals :
3
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
500 V
Pin Count :
3
Factory Lead Time :
5 Weeks
Brand :
IXYS
Mounting Style :
Through Hole
Published :
2011
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
500V
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Number of Terminations :
3
MSL :
MSL 1 - Unlimited
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.17 Ω
Power Dissipation-Max :
540W Tc
Length :
16.26mm
Qualification :
-
Terminal Form :
THROUGH-HOLE
Package Type :
TO-247AD
Turn On Delay Time :
25 ns
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+150 °C
Datasheets
IXFH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH36N50P pinout, IXFH36N50P datasheet PDF, IXFH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V TO-247-3

IXFH36N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 36A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.36 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)


IXFH36N50P Applications


There are a lot of IXYS
IXFH36N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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