IXFH35N30

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Mfr.Part #
IXFH35N30
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 35A TO247AD
Stock
32,281
In Stock :
32,281

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH35
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Power Dissipation :
300W
Power Dissipation-Max (Abs) :
300 W
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
300 V
Pin Count :
3
Drain to Source Voltage (Vdss) :
300V
Transistor Type :
1 N-Channel
Packaging :
Tube
Transistor Application :
SWITCHING
Supplier Device Package :
TO-247AD (IXFH)
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
140A
Manufacturer :
IXYS
Series :
HiPerFET™
Surface Mount :
No
Product Status :
Obsolete
Brand :
IXYS
RoHS :
Details
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Width :
5.3 mm
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
Not Applicable
Qualification Status :
Not Qualified
Terminal Position :
Single
Transistor Element Material :
SILICON
Pbfree Code :
yes
Continuous Drain Current (ID) :
35A
Power Dissipation (Max) :
300W (Tc)
Rds On (Max) @ Id, Vgs :
100m Ω @ 500mA, 10V
Number of Terminations :
3
Turn-Off Delay Time :
75 ns
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
35 A
Gate to Source Voltage (Vgs) :
20V
Rise Time :
60ns
Number of Pins :
3
Package / Case :
TO-247-3
Package :
Tube
Tradename :
HyperFET
JEDEC-95 Code :
TO-247AD
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.1Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 4mA
Fall Time (Typ) :
45 ns
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Length :
16.26 mm
Configuration :
Single
Product Category :
MOSFET
Voltage - Rated DC :
300V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current Rating :
35A
Drain to Source Breakdown Voltage :
300V
Height :
21.46 mm
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Published :
2000
ECCN Code :
EAR99
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Number of Terminals :
3
Power Dissipation Ambient-Max :
300 W
Datasheets
IXFH35N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH35N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFH35N30 pinout, IXFH35N30 datasheet PDF, IXFH35N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH35N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH35N30


N-Channel Tube 100m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3

IXFH35N30 Overview


A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 35 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH35N30 Features


a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 140A.
a 300V drain to source voltage (Vdss)


IXFH35N30 Applications


There are a lot of IXYS
IXFH35N30 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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