IXFH35N30
- Mfr.Part #
- IXFH35N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 35A TO247AD
- Stock
- 32,281
- In Stock :
- 32,281
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFH35
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Power Dissipation :
- 300W
- Power Dissipation-Max (Abs) :
- 300 W
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 300 V
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-247AD (IXFH)
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 140A
- Manufacturer :
- IXYS
- Series :
- HiPerFET™
- Surface Mount :
- No
- Product Status :
- Obsolete
- Brand :
- IXYS
- RoHS :
- Details
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Width :
- 5.3 mm
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 35A
- Power Dissipation (Max) :
- 300W (Tc)
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 500mA, 10V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 75 ns
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 35 A
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 60ns
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Package :
- Tube
- Tradename :
- HyperFET
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.1Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Fall Time (Typ) :
- 45 ns
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Length :
- 16.26 mm
- Configuration :
- Single
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 35A
- Drain to Source Breakdown Voltage :
- 300V
- Height :
- 21.46 mm
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2000
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- Power Dissipation Ambient-Max :
- 300 W
- Datasheets
- IXFH35N30

N-Channel Tube 100m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-247-3
IXFH35N30 Overview
A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 35 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH35N30 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 140A.
a 300V drain to source voltage (Vdss)
IXFH35N30 Applications
There are a lot of IXYS
IXFH35N30 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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