IXFH34N65X2
- Mfr.Part #
- IXFH34N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 34A TO247
- Stock
- 180
- In Stock :
- 180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 21.45mm
- Power Dissipation :
- 540W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 650V
- Subcategory :
- MOSFETs
- Supplier Device Package :
- TO-247
- Max Operating Temperature :
- 150 °C
- Package Type :
- TO-247
- FET Feature :
- --
- Mount :
- Through Hole
- Rds On Max :
- 105 mΩ
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Length :
- 16.24mm
- Minimum Operating Temperature :
- -55 °C
- Height :
- 5.3mm
- MSL :
- MSL 1 - Unlimited
- Package / Case :
- TO-247-3
- Tradename :
- HiPerFET
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Rise Time :
- 45 ns
- Max Power Dissipation :
- 540 W
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3330pF @ 25V
- Vgs (Max) :
- ±30V
- Published :
- 2015
- Product Category :
- MOSFET
- Qualification :
- -
- Pin Count :
- 3
- RoHS :
- Compliant
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 17A, 10V
- Number of Elements per Chip :
- 1
- Continuous Drain Current (ID) :
- 34A
- Min Operating Temperature :
- -55 °C
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Base Product Number :
- IXFH34
- Input Capacitance :
- 3.33 nF
- Series :
- HiPerFET™
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Package :
- Tube
- Factory Lead Time :
- 19 Weeks
- Drain to Source Resistance :
- 100 mΩ
- Continuous Drain Current Id :
- 34A
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 540W (Tc)
- Channel Type :
- N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- +150 °C
- Power Dissipation-Max :
- 540W Tc
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXFH34N65X2

N-Channel Tube 105m Ω @ 17A, 10V ±30V 3330pF @ 25V 56nC @ 10V 650V TO-247-3
IXFH34N65X2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3330pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 100 mΩ.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH34N65X2 Features
a continuous drain current (ID) of 34A
single MOSFETs transistor is 100 mΩ
a 650V drain to source voltage (Vdss)
IXFH34N65X2 Applications
There are a lot of IXYS
IXFH34N65X2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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