IXFH32N50Q
- Mfr.Part #
- IXFH32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO247AD
- Stock
- 58,236
- In Stock :
- 58,236
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247AD
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 32 A
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Base Product Number :
- IXFH32
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 360W Tc
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max (Abs) :
- 360 W
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.16 Ω
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation (Max) :
- 360W (Tc)
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 32A
- Package :
- Tube
- Published :
- 2001
- Supplier Device Package :
- TO-247AD (IXFH)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Resistance :
- 160mOhm
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 20 ns
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Series :
- HiPerFET™
- Turn-Off Delay Time :
- 75 ns
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 128 A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Packaging :
- Tube
- Power Dissipation :
- 416W
- Rise Time :
- 42ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4925pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16A, 10V
- Datasheets
- IXFH32N50Q

N-Channel Tube 160m Ω @ 16A, 10V ±20V 4925pF @ 25V 190nC @ 10V 500V TO-247-3
IXFH32N50Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4925pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 128 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128 A.
a 500V drain to source voltage (Vdss)
IXFH32N50Q Applications
There are a lot of IXYS
IXFH32N50Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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