IXFH32N50Q

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Mfr.Part #
IXFH32N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 32A TO247AD
Stock
58,236
In Stock :
58,236

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Surface Mount :
No
Case Connection :
DRAIN
Element Configuration :
Single
JEDEC-95 Code :
TO-247AD
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
32 A
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Base Product Number :
IXFH32
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
500V
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
360W Tc
Number of Elements :
1
Transistor Element Material :
SILICON
Product Status :
Obsolete
Transistor Application :
SWITCHING
Number of Terminations :
3
Manufacturer :
IXYS Corporation
Power Dissipation-Max (Abs) :
360 W
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Number of Terminals :
3
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.16 Ω
DS Breakdown Voltage-Min :
500 V
Power Dissipation (Max) :
360W (Tc)
Terminal Position :
Single
Radiation Hardening :
No
Pin Count :
3
Continuous Drain Current (ID) :
32A
Package :
Tube
Published :
2001
Supplier Device Package :
TO-247AD (IXFH)
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Through Hole
Package Shape :
RECTANGULAR
Resistance :
160mOhm
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Fall Time (Typ) :
20 ns
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1500 mJ
Series :
HiPerFET™
Turn-Off Delay Time :
75 ns
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
128 A
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Packaging :
Tube
Power Dissipation :
416W
Rise Time :
42ns
Input Capacitance (Ciss) (Max) @ Vds :
4925pF @ 25V
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
160m Ω @ 16A, 10V
Datasheets
IXFH32N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH32N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFH32N50Q pinout, IXFH32N50Q datasheet PDF, IXFH32N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH32N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH32N50Q


N-Channel Tube 160m Ω @ 16A, 10V ±20V 4925pF @ 25V 190nC @ 10V 500V TO-247-3

IXFH32N50Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4925pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 128 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH32N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128 A.
a 500V drain to source voltage (Vdss)


IXFH32N50Q Applications


There are a lot of IXYS
IXFH32N50Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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