IXFH32N50

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Mfr.Part #
IXFH32N50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 32A TO247AD
Stock
28,165
In Stock :
28,165

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
500 V
Transistor Application :
SWITCHING
Packaging :
Tube
JEDEC-95 Code :
TO-247
Mounting Type :
Through Hole
Nominal Vgs :
4 V
Package Shape :
RECTANGULAR
REACH SVHC :
No SVHC
Configuration :
SINGLE WITH BUILT-IN DIODE
Recovery Time :
250 ns
ECCN Code :
EAR99
Published :
2000
Product Status :
Obsolete
Drain Current-Max (Abs) (ID) :
32 A
Avalanche Energy Rating (Eas) :
1500 mJ
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 10V
RoHS Status :
RoHS Compliant
Base Product Number :
IXFH32
Rise Time :
42ns
Drain to Source Voltage (Vdss) :
500V
Power Dissipation :
360W
Element Configuration :
Single
Qualification Status :
Not Qualified
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Pbfree Code :
yes
Power Dissipation (Max) :
360W (Tc)
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Fall Time (Typ) :
26 ns
Number of Terminations :
3
Radiation Hardening :
No
Case Connection :
DRAIN
Manufacturer :
IXYS Corporation
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Supplier Device Package :
TO-247AD (IXFH)
Series :
HiPerFET™
Package / Case :
TO-247-3
Vgs (Max) :
±20V
Number of Elements :
1
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Drain-source On Resistance-Max :
0.15 Ω
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
150m Ω @ 15A, 10V
Terminal Form :
THROUGH-HOLE
Current Rating :
32A
Resistance :
150mOhm
Power Dissipation-Max (Abs) :
360 W
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
110 ns
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Surface Mount :
No
Voltage - Rated DC :
500V
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e1
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
Not Applicable
Threshold Voltage :
4V
Dual Supply Voltage :
500V
Terminal Position :
Single
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
32A
Pulsed Drain Current-Max (IDM) :
128 A
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation-Max :
360W Tc
Datasheets
IXFH32N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH32N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH32N50 pinout, IXFH32N50 datasheet PDF, IXFH32N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH32N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH32N50


N-Channel Tube 150m Ω @ 15A, 10V ±20V 5700pF @ 25V 300nC @ 10V 500V TO-247-3

IXFH32N50 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5700pF @ 25V.This device has a continuous drain current (ID) of [32A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 32 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 128 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH32N50 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 128 A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IXFH32N50 Applications


There are a lot of IXYS
IXFH32N50 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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