IXFH32N50
- Mfr.Part #
- IXFH32N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO247AD
- Stock
- 28,165
- In Stock :
- 28,165
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-247AD (IXFH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 360W
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- DS Breakdown Voltage-Min :
- 500 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Fall Time (Typ) :
- 26 ns
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-247
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 42ns
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 32A
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 360W (Tc)
- Published :
- 2000
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Base Product Number :
- IXFH32
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Nominal Vgs :
- 4 V
- Pin Count :
- 3
- Resistance :
- 150mOhm
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 32 A
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 360W Tc
- JESD-30 Code :
- R-PSFM-T3
- Threshold Voltage :
- 4V
- Drain-source On Resistance-Max :
- 0.15 Ω
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 500V
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Dual Supply Voltage :
- 500V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- FET Feature :
- --
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Series :
- HiPerFET™
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 128 A
- Product Status :
- Obsolete
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Turn-Off Delay Time :
- 110 ns
- Polarity/Channel Type :
- N-Channel
- Recovery Time :
- 250 ns
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 360 W
- Current Rating :
- 32A
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Datasheets
- IXFH32N50

N-Channel Tube 150m Ω @ 15A, 10V ±20V 5700pF @ 25V 300nC @ 10V 500V TO-247-3
IXFH32N50 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5700pF @ 25V.This device has a continuous drain current (ID) of [32A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 32 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 128 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH32N50 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 128 A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IXFH32N50 Applications
There are a lot of IXYS
IXFH32N50 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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