IXFH32N48
- Mfr.Part #
- IXFH32N48
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 480V 32A TO247AD
- Stock
- 1,651
- In Stock :
- 1,651
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 480V
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Number of Terminals :
- 3
- Base Product Number :
- IXFH32
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 32A
- Pulsed Drain Current-Max (IDM) :
- 128A
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 480V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-247AD
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Package / Case :
- TO-247-3
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Supplier Device Package :
- TO-247AD (IXFH)
- Product Status :
- Obsolete
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 360W (Tc)
- Power Dissipation-Max :
- 360W Tc
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 15A, 10V
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.13Ohm
- FET Feature :
- --
- Datasheets
- IXFH32N48
N-Channel Tube 130m Ω @ 15A, 10V ±20V 5200pF @ 25V 300nC @ 10V 480V TO-247-3
IXFH32N48 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 32A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 128A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 480V in order to maintain normal operation.Operating this transistor requires a 480V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH32N48 Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 128A.
a 480V drain to source voltage (Vdss)
IXFH32N48 Applications
There are a lot of IXYS
IXFH32N48 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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