IXFH320N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Qualification :

-

Input Capacitance (Ciss) (Max) @ Vds :

26000pF @ 25V

Product Category :

MOSFET

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 100A, 10V

Input Capacitance :

26 nF

Package / Case :

TO-247-3

ECCN Code :

EAR99

Base Product Number :

IXFH320

Gate Charge (Qg) (Max) @ Vgs :

430nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-247AD (IXFH)

Drain-source On Resistance-Max :

0.0035Ohm

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation :

1kW

Turn-Off Delay Time :

73 ns

Content :

1pc(s)

Drain to Source Breakdown Voltage :

100V

Power Dissipation (Max) :

1000W (Tc)

Mount :

Through Hole

Rise Time :

46ns

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

1 kW

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Continuous Drain Current Id :

320A

Channel Type :

N Channel

Packaging :

Tube

Manufacturer :

IXYS

Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

FET Feature :

--

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Maximum Operating Temperature :

+ 175 C

Power Dissipation-Max :

1000W Tc

Minimum Operating Temperature :

- 55 C

Package :

Tube

Configuration :

Single

Number of Terminations :

3

FET Type :

N-Channel

Max Operating Temperature :

175 °C

Product :

MOSFET

Tradename :

HiPerFET

Fall Time (Typ) :

177 ns

Current - Continuous Drain (Id) @ 25°C :

320A Tc

RoHS :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Manuf. code :

IXY

Product Type :

MOSFET

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

800A

Enclosure :

TO 247AD

Power (max) P(TOT) :

1000W

Min Operating Temperature :

-55 °C

Transistor Type :

1 N-Channel

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Drain to Source Resistance :

3.5 mΩ

Channels :

1

Lead Free :

Lead Free

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

320A

Vgs (Max) :

±20V

Rds On Max :

3.5 mΩ

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

30 Weeks

Published :

2010

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™, TrenchT2™

Element Configuration :

Single

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Max. operating temperature :

+175°C

Brand :

IXYS

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA