IXFH320N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Number of Terminations :

3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manuf. code :

IXY

Operating Temperature :

-55°C~175°C TJ

Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

800A

Tradename :

HiPerFET

Content :

1pc(s)

Max Operating Temperature :

175 °C

Power Dissipation-Max :

1000W Tc

Lead Free :

Lead Free

Mount :

Through Hole

Published :

2010

FET Feature :

--

Power (max) P(TOT) :

1000W

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 100A, 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn-Off Delay Time :

73 ns

Drain to Source Resistance :

3.5 mΩ

Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

430nC @ 10V

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

320A Tc

Rds On Max :

3.5 mΩ

Product Type :

MOSFET

Transistor Application :

SWITCHING

RoHS :

Compliant

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

1500 mJ

Fall Time (Typ) :

177 ns

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Input Capacitance :

26 nF

Additional Feature :

AVALANCHE RATED

Enclosure :

TO 247AD

Supplier Device Package :

TO-247AD (IXFH)

Max Power Dissipation :

1 kW

Channel Mode :

Enhancement

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

1kW

Continuous Drain Current Id :

320A

Max. operating temperature :

+175°C

Continuous Drain Current (ID) :

320A

Power Dissipation (Max) :

1000W (Tc)

Rise Time :

46ns

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFH320

Gate to Source Voltage (Vgs) :

20V

Channel Type :

N Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification :

-

Case Connection :

DRAIN

Min Operating Temperature :

-55 °C

Pin Count :

3

Drain-source On Resistance-Max :

0.0035Ohm

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

Factory Lead Time :

30 Weeks

Series :

HiPerFET™, TrenchT2™

Product :

MOSFET

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

26000pF @ 25V

FET Type :

N-Channel

Number of Channels :

1 Channel

Product Category :

MOSFET

Brand :

IXYS