IXFH30N60Q
- Mfr.Part #
- IXFH30N60Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247AD
- Stock
- 16,175
- In Stock :
- 16,175
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 600V
- Manufacturer :
- IXYS
- Height :
- 21.46 mm
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247AD
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 500W Tc
- Package / Case :
- TO-247-3
- Length :
- 16.26 mm
- Drain to Source Breakdown Voltage :
- 600V
- Drain-source On Resistance-Max :
- 0.23 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 120A
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Series :
- HiPerFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 16 ns
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Number of Elements :
- 1
- Package :
- Tube
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 500W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Product Category :
- MOSFET
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 30A
- Turn-Off Delay Time :
- 80 ns
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 500mA, 10V
- Base Product Number :
- IXFH30
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.3 mm
- Supplier Device Package :
- TO-247AD (IXFH)
- Configuration :
- Single
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 500W
- Tradename :
- HyperFET
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 32ns
- Datasheets
- IXFH30N60Q

N-Channel Tube 230m Ω @ 500mA, 10V ±20V 4700pF @ 25V 125nC @ 10V 600V TO-247-3
IXFH30N60Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4700pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH30N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 120A.
a 600V drain to source voltage (Vdss)
IXFH30N60Q Applications
There are a lot of IXYS
IXFH30N60Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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