IXFH30N60Q

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Mfr.Part #
IXFH30N60Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO247AD
Stock
16,175
In Stock :
16,175

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
600V
Manufacturer :
IXYS
Height :
21.46 mm
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-247AD
Number of Channels :
1 Channel
Channel Mode :
Enhancement
Number of Terminations :
3
Power Dissipation-Max :
500W Tc
Package / Case :
TO-247-3
Length :
16.26 mm
Drain to Source Breakdown Voltage :
600V
Drain-source On Resistance-Max :
0.23 Ω
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
120A
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Pbfree Code :
yes
Element Configuration :
Single
Series :
HiPerFET™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
16 ns
DS Breakdown Voltage-Min :
600 V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Number of Elements :
1
Package :
Tube
Subcategory :
MOSFETs
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
500W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Product Category :
MOSFET
Number of Pins :
3
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1500 mJ
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
30A
Turn-Off Delay Time :
80 ns
Package Shape :
RECTANGULAR
Packaging :
Tube
Surface Mount :
No
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Published :
2003
Qualification Status :
Not Qualified
Brand :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
230m Ω @ 500mA, 10V
Base Product Number :
IXFH30
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
5.3 mm
Supplier Device Package :
TO-247AD (IXFH)
Configuration :
Single
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
500W
Tradename :
HyperFET
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
32ns
Datasheets
IXFH30N60Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N60Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFH30N60Q pinout, IXFH30N60Q datasheet PDF, IXFH30N60Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N60Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH30N60Q


N-Channel Tube 230m Ω @ 500mA, 10V ±20V 4700pF @ 25V 125nC @ 10V 600V TO-247-3

IXFH30N60Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4700pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH30N60Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 120A.
a 600V drain to source voltage (Vdss)


IXFH30N60Q Applications


There are a lot of IXYS
IXFH30N60Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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