IXFH30N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation-Max :

500W Tc

Vgs (Max) :

±30V

Number of Terminals :

3

Number of Terminations :

3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current Rating :

30A

Product Category :

MOSFET

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Minimum Operating Temperature :

- 55 C

Rise Time :

20ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Base Product Number :

IXFH30

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Package :

Tube

Width :

5.3 mm

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

240m Ω @ 15A, 10V

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™, PolarHT™

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

80A

FET Type :

N-Channel

Power Dissipation (Max) :

500W (Tc)

Length :

16.26 mm

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Subcategory :

MOSFETs

Pin Count :

3

DS Breakdown Voltage-Min :

600 V

Voltage - Rated DC :

600V

Drain-source On Resistance-Max :

0.24Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

21.46 mm

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Surface Mount :

No

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Published :

2006

Fall Time (Typ) :

25 ns

Continuous Drain Current (ID) :

30A

Power Dissipation :

500W

Turn-Off Delay Time :

80 ns

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Supplier Device Package :

TO-247AD (IXFH)

Terminal Position :

Single

JEDEC-95 Code :

TO-247AD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1500 mJ

Element Configuration :

Single

Product Status :

Active

Radiation Hardening :

No

Package / Case :

TO-247-3

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Package Shape :

RECTANGULAR

Number of Elements :

1

Number of Pins :

3

Brand :

IXYS

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 4mA

Terminal Form :

THROUGH-HOLE