IXFH30N60P

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Mfr.Part #
IXFH30N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO247AD
Stock
38,688
In Stock :
38,688

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Power Dissipation :
500W
Vgs(th) (Max) @ Id :
5V @ 4mA
Series :
HiPerFET™, PolarHT™
Pulsed Drain Current-Max (IDM) :
80A
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
600V
Terminal Form :
THROUGH-HOLE
Current Rating :
30A
Supplier Device Package :
TO-247AD (IXFH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Voltage - Rated DC :
600V
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Factory Lead Time :
30 Weeks
Power Dissipation-Max :
500W Tc
Drain to Source Breakdown Voltage :
600V
Manufacturer :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Width :
5.3 mm
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
30A
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package / Case :
TO-247-3
Number of Channels :
1 Channel
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e1
Brand :
IXYS
Configuration :
Single
Vgs (Max) :
±30V
Packaging :
Tube
Drain-source On Resistance-Max :
0.24Ohm
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
600 V
Operating Mode :
ENHANCEMENT MODE
Published :
2006
Surface Mount :
No
Terminal Position :
Single
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Number of Terminations :
3
Product Type :
MOSFET
Transistor Element Material :
SILICON
Base Product Number :
IXFH30
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Height :
21.46 mm
Lead Free :
Lead Free
Rise Time :
20ns
JEDEC-95 Code :
TO-247AD
Length :
16.26 mm
Subcategory :
MOSFETs
Mounting Style :
Through Hole
FET Feature :
--
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Fall Time (Typ) :
25 ns
Turn-Off Delay Time :
80 ns
Power Dissipation (Max) :
500W (Tc)
Product Category :
MOSFET
Reach Compliance Code :
Compliant
Datasheets
IXFH30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, IXFH30N60P pinout, IXFH30N60P datasheet PDF, IXFH30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 4000pF @ 25V 82nC @ 10V 600V TO-247-3

IXFH30N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXFH30N60P Applications


There are a lot of IXYS
IXFH30N60P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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