IXFH30N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Drain to Source Breakdown Voltage :

600V

Transistor Type :

1 N-Channel

Current Rating :

30A

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Power Dissipation (Max) :

500W (Tc)

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.24Ohm

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1500 mJ

Base Product Number :

IXFH30

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Power Dissipation-Max :

500W Tc

Radiation Hardening :

No

Height :

21.46 mm

Supplier Device Package :

TO-247AD (IXFH)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

240m Ω @ 15A, 10V

Continuous Drain Current (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Package :

Tube

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

80A

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Product Status :

Active

Pbfree Code :

yes

Length :

16.26 mm

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

5V @ 4mA

Case Connection :

DRAIN

Subcategory :

MOSFETs

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Width :

5.3 mm

Number of Pins :

3

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

FET Type :

N-Channel

Published :

2006

Channel Mode :

Enhancement

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarHT™

Tradename :

HiPerFET

Rise Time :

20ns

Terminal Position :

Single

Element Configuration :

Single

Turn-Off Delay Time :

80 ns

Power Dissipation :

500W

Mount :

Through Hole

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Fall Time (Typ) :

25 ns

Number of Terminations :

3

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Factory Lead Time :

30 Weeks

Product Type :

MOSFET

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

600 V

Maximum Operating Temperature :

+ 150 C