IXFH30N50Q3

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Mfr.Part #
IXFH30N50Q3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247AD
Stock
283
In Stock :
283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5.3mm
Transistor Element Material :
SILICON
Number of Elements per Chip :
1
Qualification Status :
Not Qualified
Minimum Operating Temperature :
-55 °C
Pulsed Drain Current-Max (IDM) :
90A
Qualification :
-
Manufacturer :
IXYS
Channel Type :
N
Tradename :
HiPerFET
Additional Feature :
AVALANCHE RATED
Rise Time :
250ns
Case Connection :
DRAIN
Series :
HiPerFET™
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Package :
Tube
Drain to Source Voltage (Vdss) :
500V
Brand :
IXYS
Number of Channels :
1 Channel
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
30V
RoHS :
Details
Avalanche Energy Rating (Eas) :
1500 mJ
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Number of Pins :
3
Length :
16.26mm
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Package / Case :
TO-247-3
Maximum Operating Temperature :
+150 °C
Power Dissipation (Max) :
690W (Tc)
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
JEDEC-95 Code :
TO-247AD
Product Status :
Active
Base Product Number :
IXFH30
Power Dissipation :
690W
FET Type :
N-Channel
Continuous Drain Current (ID) :
30A
Mounting Type :
Through Hole
Height :
16.26mm
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Drain-source On Resistance-Max :
0.2Ohm
Product Category :
MOSFET
Factory Lead Time :
20 Weeks
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Product Type :
MOSFET
Continuous Drain Current Id :
30A
Package Type :
TO-247
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
14 ns
Pin Count :
3
Power Dissipation-Max :
690W Tc
Number of Elements :
1
Drain to Source Breakdown Voltage :
500V
Transistor Type :
1 N-Channel
Published :
2008
Number of Terminations :
3
Configuration :
Single
Turn-Off Delay Time :
26 ns
Supplier Device Package :
TO-247AD (IXFH)
Datasheets
IXFH30N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFH30N50Q3 pinout, IXFH30N50Q3 datasheet PDF, IXFH30N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH30N50Q3


N-Channel Tube 200m Ω @ 15A, 10V ±20V 3200pF @ 25V 62nC @ 10V 500V TO-247-3

IXFH30N50Q3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Peak drain current is 90A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH30N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)


IXFH30N50Q3 Applications


There are a lot of IXYS
IXFH30N50Q3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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