IXFH30N50

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Mfr.Part #
IXFH30N50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247AD
Stock
8,832
In Stock :
8,832

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH30
Power Gain :
Not Required dB
Configuration :
Single
Manufacturer :
IXYS
Output Power (Max) :
Not Required W
Rise Time :
24ns
Turn-Off Delay Time :
82 ns
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate-Source Voltage (Max) :
±30(V)
Published :
2004
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
FET Feature :
--
RoHS :
Details
Surface Mount :
No
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
Qualification :
-
Resistance :
200mOhm
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
30A
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Operating Temperature :
-55°C~150°C TJ
Operating Temperature Classification :
Military
Drain-source On Resistance-Max :
0.2 Ω
Power Dissipation (Max) :
460W (Tc)
Fall Time (Typ) :
24 ns
Lead Free :
Lead Free
DS Breakdown Voltage-Min :
500 V
Packaging :
Tube
Polarity :
N
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Height :
21.46 mm
Drain-Source On-Volt :
500(V)
Noise Figure :
Not Required dB
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Product Type :
MOSFET
Current Rating :
30A
MSL :
-
Frequency (Max) :
Not Required MHz
Vgs(th) (Max) @ Id :
5V @ 4mA
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Package / Case :
TO-247-3
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Power Dissipation-Max :
460W Tc
Threshold Voltage :
5V
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Tradename :
HiPerFET
Voltage - Rated DC :
500V
Transistor Application :
SWITCHING
Number of Elements :
1
JEDEC-95 Code :
TO-247AD
Maximum Operating Temperature :
+ 150 C
Number of Pins :
3
Pin Count :
3
Operating Temp Range :
-55C to 150C
Series :
HiPerFET™, PolarHT™
Minimum Operating Temperature :
- 55 C
Radiation Hardening :
No
Length :
16.26 mm
Continuous Drain Current Id :
30A
Drain to Source Voltage (Vdss) :
500V
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Rad Hardened :
No
Number of Channels :
1 Channel
Pbfree Code :
yes
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation :
460W
Case Connection :
DRAIN
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Factory Lead Time :
24 Weeks
Mounting :
Through Hole
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
1200 mJ
Width :
5.3 mm
Continuous Drain Current :
30(A)
Terminal Form :
THROUGH-HOLE
Drain to Source Breakdown Voltage :
500V
Channel Type :
N Channel
Brand :
IXYS
Type :
Power MOSFET
Pulsed Drain Current-Max (IDM) :
75A
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Package Type :
TO-247AD
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Subcategory :
MOSFETs
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Mount :
Through Hole
Number of Terminals :
3
Datasheets
IXFH30N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, Type:Power MOSFET, Number of Terminations:3, IXFH30N50 pinout, IXFH30N50 datasheet PDF, IXFH30N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH30N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH30N50


N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3

IXFH30N50P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 75A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH30N50P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFH30N50P Applications


There are a lot of IXYS
IXFH30N50P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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