IXFH30N50
- Mfr.Part #
- IXFH30N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247AD
- Stock
- 8,832
- In Stock :
- 8,832
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFH30
- Power Gain :
- Not Required dB
- Configuration :
- Single
- Manufacturer :
- IXYS
- Output Power (Max) :
- Not Required W
- Rise Time :
- 24ns
- Turn-Off Delay Time :
- 82 ns
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate-Source Voltage (Max) :
- ±30(V)
- Published :
- 2004
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- FET Feature :
- --
- RoHS :
- Details
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Qualification :
- -
- Resistance :
- 200mOhm
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 30A
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Temperature Classification :
- Military
- Drain-source On Resistance-Max :
- 0.2 Ω
- Power Dissipation (Max) :
- 460W (Tc)
- Fall Time (Typ) :
- 24 ns
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 500 V
- Packaging :
- Tube
- Polarity :
- N
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Height :
- 21.46 mm
- Drain-Source On-Volt :
- 500(V)
- Noise Figure :
- Not Required dB
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Product Type :
- MOSFET
- Current Rating :
- 30A
- MSL :
- -
- Frequency (Max) :
- Not Required MHz
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 460W Tc
- Threshold Voltage :
- 5V
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Tradename :
- HiPerFET
- Voltage - Rated DC :
- 500V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AD
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 3
- Pin Count :
- 3
- Operating Temp Range :
- -55C to 150C
- Series :
- HiPerFET™, PolarHT™
- Minimum Operating Temperature :
- - 55 C
- Radiation Hardening :
- No
- Length :
- 16.26 mm
- Continuous Drain Current Id :
- 30A
- Drain to Source Voltage (Vdss) :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Rad Hardened :
- No
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation :
- 460W
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Factory Lead Time :
- 24 Weeks
- Mounting :
- Through Hole
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Width :
- 5.3 mm
- Continuous Drain Current :
- 30(A)
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Breakdown Voltage :
- 500V
- Channel Type :
- N Channel
- Brand :
- IXYS
- Type :
- Power MOSFET
- Pulsed Drain Current-Max (IDM) :
- 75A
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Package Type :
- TO-247AD
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Subcategory :
- MOSFETs
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Datasheets
- IXFH30N50

N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3
IXFH30N50P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 75A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFH30N50P Applications
There are a lot of IXYS
IXFH30N50P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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