IXFH30N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500 V

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

N

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXFH30

Power Dissipation (Max) :

460W (Tc)

Operating Temp Range :

-55C to 150C

Supplier Device Package :

TO-247AD (IXFH)

Resistance :

200mOhm

Drain to Source Breakdown Voltage :

500V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AD

Mounting Style :

Through Hole

Vgs (Max) :

±30V

Number of Terminals :

3

Tradename :

HiPerFET

Configuration :

Single

Case Connection :

DRAIN

Number of Elements :

1

Gate-Source Voltage (Max) :

±30(V)

Continuous Drain Current Id :

30A

Pulsed Drain Current-Max (IDM) :

75A

Transistor Application :

SWITCHING

Voltage - Rated DC :

500V

Transistor Type :

1 N-Channel

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation-Max :

460W Tc

Avalanche Energy Rating (Eas) :

1200 mJ

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

FET Type :

N-Channel

Mounting :

Through Hole

Terminal Form :

THROUGH-HOLE

Type :

Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Qualification :

-

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.2 Ω

Width :

5.3 mm

Number of Pins :

3

Product Category :

MOSFET

Current Rating :

30A

Number of Channels :

1 Channel

Fall Time (Typ) :

24 ns

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Gain :

Not Required dB

Mount :

Through Hole

Factory Lead Time :

24 Weeks

Power Dissipation :

460W

Length :

16.26 mm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Product Type :

MOSFET

Rise Time :

24ns

Number of Terminations :

3

Reach Compliance Code :

Compliant

Rad Hardened :

No

Frequency (Max) :

Not Required MHz

Package :

Tube

Height :

21.46 mm

Package Type :

TO-247AD

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Noise Figure :

Not Required dB

Output Power (Max) :

Not Required W

Drain-Source On-Volt :

500(V)

Packaging :

Tube

Surface Mount :

No

Channel Type :

N Channel

Element Configuration :

Single

Manufacturer :

IXYS

Channel Mode :

Enhancement

Continuous Drain Current :

30(A)

Radiation Hardening :

No

Turn-Off Delay Time :

82 ns

Threshold Voltage :

5V

Brand :

IXYS

Continuous Drain Current (ID) :

30A

Operating Temperature Classification :

Military

MSL :

-

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarHT™