IXFH30N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 4mA

ECCN Code :

EAR99

Operating Temp Range :

-55C to 150C

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.2 Ω

Continuous Drain Current (ID) :

30A

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Length :

16.26 mm

Element Configuration :

Single

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

500 V

JESD-30 Code :

R-PSFM-T3

Series :

HiPerFET™, PolarHT™

Frequency (Max) :

Not Required MHz

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Gate-Source Voltage (Max) :

±30(V)

Supplier Device Package :

TO-247AD (IXFH)

Polarity :

N

Mounting :

Through Hole

MSL :

-

Number of Terminals :

3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1200 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

FET Type :

N-Channel

Package Type :

TO-247AD

Power Gain :

Not Required dB

Continuous Drain Current Id :

30A

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Base Product Number :

IXFH30

Lead Free :

Lead Free

Product Status :

Active

Transistor Type :

1 N-Channel

Type :

Power MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Mounting Type :

Through Hole

Brand :

IXYS

FET Feature :

--

Radiation Hardening :

No

Threshold Voltage :

5V

Qualification :

-

Continuous Drain Current :

30(A)

Power Dissipation (Max) :

460W (Tc)

Vgs (Max) :

±30V

Current Rating :

30A

Factory Lead Time :

24 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Transistor Element Material :

SILICON

Published :

2004

Rise Time :

24ns

Width :

5.3 mm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

200mOhm

Tradename :

HiPerFET

Noise Figure :

Not Required dB

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

460W Tc

Package / Case :

TO-247-3

Pin Count :

3

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AD

Configuration :

Single

Case Connection :

DRAIN

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Package :

Tube

Pulsed Drain Current-Max (IDM) :

75A

Channel Type :

N Channel

Drain to Source Breakdown Voltage :

500V

Height :

21.46 mm

Fall Time (Typ) :

24 ns

Operating Temperature :

-55°C~150°C TJ

Rad Hardened :

No

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

30V

RoHS :

Details

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Drain-Source On-Volt :

500(V)

Terminal Form :

THROUGH-HOLE

Output Power (Max) :

Not Required W

Product Type :

MOSFET

Turn-Off Delay Time :

82 ns

Power Dissipation :

460W

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

500V

Maximum Operating Temperature :

+ 150 C

Voltage - Rated DC :

500V

REACH SVHC :

No SVHC

Operating Temperature Classification :

Military