IXFH30N40Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.3 mm

Pulsed Drain Current-Max (IDM) :

120A

Manufacturer :

IXYS

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Power Dissipation (Max) :

300W (Tc)

Power Dissipation-Max :

300W Tc

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Height :

21.46 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Terminal Position :

Single

Base Product Number :

IXFH30

Series :

HiPerFET™

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Tradename :

HyperFET

DS Breakdown Voltage-Min :

400 V

FET Type :

N-Channel

Fall Time (Typ) :

12 ns

Package :

Tube

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

4V @ 4mA

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Number of Channels :

1 Channel

REACH SVHC :

No SVHC

Number of Terminations :

3

Product Status :

Obsolete

Published :

2000

Transistor Polarity :

N-Channel

Length :

16.26 mm

Supplier Device Package :

TO-247AD (IXFH)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Resistance :

160mOhm

RoHS :

Details

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Power Dissipation :

300W

Product Type :

MOSFET

Brand :

IXYS

ECCN Code :

EAR99

Surface Mount :

No

Packaging :

Tube

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

4V

Drain to Source Voltage (Vdss) :

400V

Drain to Source Breakdown Voltage :

400V

Avalanche Energy Rating (Eas) :

1.5 mJ

Maximum Operating Temperature :

+ 150 C

Rise Time :

35ns

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Subcategory :

MOSFETs

Continuous Drain Current (ID) :

30A

Configuration :

Single

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.16 Ω

Turn-Off Delay Time :

51 ns

Number of Terminals :

3

Channel Mode :

Enhancement

Weight :

6g

Pin Count :

3

Transistor Application :

SWITCHING

Product Category :

MOSFET