IXFH28N50Q

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Mfr.Part #
IXFH28N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 28A TO247AD
Stock
42,059
In Stock :
42,059

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
28A
Turn-Off Delay Time :
51 ns
Number of Elements :
1
Package :
Tube
Published :
2003
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
20ns
Pin Count :
3
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
112A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Resistance :
200 mΩ
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Drain-source On Resistance-Max :
0.2Ohm
Power Dissipation :
375W
Manufacturer :
IXYS Corporation
Power Dissipation-Max :
375W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
Product Status :
Obsolete
Gate to Source Voltage (Vgs) :
30V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
28A Tc
RoHS Status :
RoHS Compliant
Drain to Source Voltage (Vdss) :
500V
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Number of Pins :
3
Surface Mount :
No
Max Power Dissipation :
375 W
Pbfree Code :
yes
Rds On Max :
200 mΩ
FET Type :
N-Channel
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
375W (Tc)
Input Capacitance :
3 nF
Packaging :
Tube
Min Operating Temperature :
-55 °C
Terminal Position :
Single
Drain to Source Breakdown Voltage :
500V
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
200m Ω @ 14A, 10V
Max Operating Temperature :
150 °C
DS Breakdown Voltage-Min :
500 V
Series :
HiPerFET™
Configuration :
Single
Fall Time (Typ) :
12 ns
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
RoHS :
Compliant
Reach Compliance Code :
Compliant
FET Feature :
--
Base Product Number :
IXFH28
Datasheets
IXFH28N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH28N50Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFH28N50Q pinout, IXFH28N50Q datasheet PDF, IXFH28N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH28N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH28N50Q


N-Channel Tube 200m Ω @ 14A, 10V ±30V 3000pF @ 25V 94nC @ 10V 500V TO-247-3

IXFH28N50Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 112A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 200 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH28N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 112A.
single MOSFETs transistor is 200 mΩ
a 500V drain to source voltage (Vdss)


IXFH28N50Q Applications


There are a lot of IXYS
IXFH28N50Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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