IXFH28N50Q

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Mfr.Part #
IXFH28N50Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 28A TO247AD
Stock
42,059
In Stock :
42,059

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Power Dissipation :
375W
Avalanche Energy Rating (Eas) :
1500 mJ
Turn-Off Delay Time :
51 ns
Pin Count :
3
Transistor Application :
SWITCHING
Product Status :
Obsolete
Input Capacitance :
3 nF
Drain-source On Resistance-Max :
0.2Ohm
Number of Terminals :
3
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Rds On Max :
200 mΩ
Surface Mount :
No
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500 V
Min Operating Temperature :
-55 °C
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Drain to Source Breakdown Voltage :
500V
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Package / Case :
TO-247-3
Mount :
Through Hole
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
200m Ω @ 14A, 10V
Base Product Number :
IXFH28
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-247AD
Packaging :
Tube
Continuous Drain Current (ID) :
28A
Published :
2003
Max Power Dissipation :
375 W
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Drain to Source Resistance :
200 mΩ
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Rise Time :
20ns
Configuration :
Single
RoHS :
Compliant
Supplier Device Package :
TO-247AD (IXFH)
FET Feature :
--
Manufacturer :
IXYS Corporation
Fall Time (Typ) :
12 ns
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Max Operating Temperature :
150 °C
Pulsed Drain Current-Max (IDM) :
112A
Terminal Position :
Single
Number of Terminations :
3
Power Dissipation (Max) :
375W (Tc)
Series :
HiPerFET™
Power Dissipation-Max :
375W Tc
Datasheets
IXFH28N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH28N50Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, IXFH28N50Q pinout, IXFH28N50Q datasheet PDF, IXFH28N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH28N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH28N50Q


N-Channel Tube 200m Ω @ 14A, 10V ±30V 3000pF @ 25V 94nC @ 10V 500V TO-247-3

IXFH28N50Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 112A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 200 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH28N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 112A.
single MOSFETs transistor is 200 mΩ
a 500V drain to source voltage (Vdss)


IXFH28N50Q Applications


There are a lot of IXYS
IXFH28N50Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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