IXFH28N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance :

3 nF

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

Rds On Max :

200 mΩ

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Manufacturer :

IXYS Corporation

Base Product Number :

IXFH28

Package / Case :

TO-247-3

RoHS :

Compliant

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Mounting Type :

Through Hole

Drain to Source Resistance :

200 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

375W

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Package :

Tube

DS Breakdown Voltage-Min :

500 V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-247AD (IXFH)

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

28A

Max Power Dissipation :

375 W

Power Dissipation-Max :

375W Tc

Published :

2003

Element Configuration :

Single

Drain-source On Resistance-Max :

0.2Ohm

Packaging :

Tube

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AD

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

112A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Configuration :

Single

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±30V

Number of Elements :

1

Turn-Off Delay Time :

51 ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 14A, 10V

Case Connection :

DRAIN

Power Dissipation (Max) :

375W (Tc)

Pin Count :

3

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55 °C

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Series :

HiPerFET™