IXFH26N60Q

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Mfr.Part #
IXFH26N60Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247AD
Stock
5,511
In Stock :
5,511

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Mounting Type :
Through Hole
Threshold Voltage :
4.5V
Package :
Tube
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
RoHS Status :
RoHS Compliant
Product Status :
Obsolete
Factory Lead Time :
8 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
16 ns
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
Not Applicable
Pin Count :
3
Drain to Source Voltage (Vdss) :
600V
Current Rating :
26A
Pulsed Drain Current-Max (IDM) :
104 A
Mount :
Through Hole
Turn-Off Delay Time :
80 ns
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Termination :
Through Hole
Dual Supply Voltage :
600V
Manufacturer :
IXYS Corporation
Reverse Recovery Time :
250 ns
Published :
2002
Rise Time :
32ns
JEDEC-95 Code :
TO-247AD
REACH SVHC :
No SVHC
Radiation Hardening :
No
Number of Elements :
1
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Power Dissipation (Max) :
360W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Weight :
6g
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Base Product Number :
IXFH26
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminals :
3
Element Configuration :
Single
DS Breakdown Voltage-Min :
600 V
Series :
HiPerFET™
Drain to Source Breakdown Voltage :
600V
JESD-30 Code :
R-PSFM-T3
Nominal Vgs :
4.5 V
Packaging :
Tube
Lead Free :
Lead Free
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
1500 mJ
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
250m Ω @ 13A, 10V
FET Feature :
--
Drain-source On Resistance-Max :
0.25 Ω
Power Dissipation :
360W
Power Dissipation-Max :
360W Tc
Number of Pins :
3
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Resistance :
250mOhm
Continuous Drain Current (ID) :
26A
Terminal Position :
Single
Voltage - Rated DC :
600V
Datasheets
IXFH26N60Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N60Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, IXFH26N60Q pinout, IXFH26N60Q datasheet PDF, IXFH26N60Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N60Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N60Q


N-Channel Tube 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V 600V TO-247-3

IXFH26N60Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 104 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH26N60Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 104 A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)


IXFH26N60Q Applications


There are a lot of IXYS
IXFH26N60Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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