IXFH26N60Q
- Mfr.Part #
- IXFH26N60Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247AD
- Stock
- 5,511
- In Stock :
- 5,511
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 250mOhm
- Rise Time :
- 32ns
- Power Dissipation :
- 360W
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 80 ns
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXFH26
- Manufacturer :
- IXYS Corporation
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-247AD (IXFH)
- DS Breakdown Voltage-Min :
- 600 V
- Continuous Drain Current (ID) :
- 26A
- Drain to Source Breakdown Voltage :
- 600V
- Product Status :
- Obsolete
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 13A, 10V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 600V
- Reverse Recovery Time :
- 250 ns
- Threshold Voltage :
- 4.5V
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Dual Supply Voltage :
- 600V
- Packaging :
- Tube
- Termination :
- Through Hole
- Number of Terminations :
- 3
- Nominal Vgs :
- 4.5 V
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Fall Time (Typ) :
- 16 ns
- Power Dissipation (Max) :
- 360W (Tc)
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-247AD
- REACH SVHC :
- No SVHC
- Weight :
- 6g
- Radiation Hardening :
- No
- Published :
- 2002
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 104 A
- Drain-source On Resistance-Max :
- 0.25 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Current Rating :
- 26A
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Power Dissipation-Max :
- 360W Tc
- Datasheets
- IXFH26N60Q

N-Channel Tube 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V 600V TO-247-3
IXFH26N60Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 104 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH26N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 104 A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFH26N60Q Applications
There are a lot of IXYS
IXFH26N60Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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