IXFH26N60Q
- Mfr.Part #
- IXFH26N60Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247AD
- Stock
- 5,511
- In Stock :
- 5,511
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 4.5V
- Package :
- Tube
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Product Status :
- Obsolete
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 16 ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Current Rating :
- 26A
- Pulsed Drain Current-Max (IDM) :
- 104 A
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 80 ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- Through Hole
- Dual Supply Voltage :
- 600V
- Manufacturer :
- IXYS Corporation
- Reverse Recovery Time :
- 250 ns
- Published :
- 2002
- Rise Time :
- 32ns
- JEDEC-95 Code :
- TO-247AD
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 360W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Weight :
- 6g
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Base Product Number :
- IXFH26
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Terminals :
- 3
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 600 V
- Series :
- HiPerFET™
- Drain to Source Breakdown Voltage :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Nominal Vgs :
- 4.5 V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 13A, 10V
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.25 Ω
- Power Dissipation :
- 360W
- Power Dissipation-Max :
- 360W Tc
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Resistance :
- 250mOhm
- Continuous Drain Current (ID) :
- 26A
- Terminal Position :
- Single
- Voltage - Rated DC :
- 600V
- Datasheets
- IXFH26N60Q

N-Channel Tube 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V 600V TO-247-3
IXFH26N60Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 104 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH26N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 104 A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFH26N60Q Applications
There are a lot of IXYS
IXFH26N60Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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